鄰近同心金氧半穿隧二極體之電流耦合效應及邏輯閘應用

Abstract

本篇論文主旨在於討論相鄰之同心圓環金氧半穿隧二極體結構之電流電壓特性及其電流之耦合現象，並利用此耦合特性提出一種可能的邏輯閘應用。在第二章節中，我們觀察了在擁有完整外環的同心圓環元件中，外環與中心圓元件之電流電壓特性。並且使用了兩種不同的結構包括，共平面氧化層元件及閘極外圍氧化層移除之元件來進行對比。發現在掃動外環電壓之同時將中心圓偏壓固定，發現中心圓電流會呈現不同的極性變化。本研究對於此種特性提出了關於此兩種不同結構之耦合效應之解釋，並針對閘極外圍氧化層移除之元件，提出可能之邏輯閘應用。在第三章節中，同樣在兩種架構下將外環分割成三個相同大小之扇形，並觀察不同數量之外環輸入對於中心圓電流特性之影響。為了印證所提出的物理模型，在此章節中同時使用了Silvaco TCAD來進行分析。並且提出了基於共平面氧化層元件結構之邏輯應用。最後在第四章節中提出了未來可行的研究方向建議。

This thesis focuses on the discussion of the current-voltage characteristics and current coupling phenomena of adjacent concentric metal-insulator-semiconductor tunnel diodes (MISTDs) structures. Utilizing these coupling properties, some possible applications of logic gates based on these MISTDs are proposed. In chapter 2, we observed the current-voltage characteristics between the outer ring and the inner center in MISTD devices with complete outer ring. Two different structures, namely planar (PL) and edge-removed (ER) devices, were compared. It was found that while sweeping the outer ring voltage with a fixed center bias, the polarity of the center current varied. An explanation of this characteristic regarding the coupling effects of these two different structures was provided. Additionally, a potential logic gate application based on ER devices was proposed. In chapter 3, under the same two structures, the outer ring was divided into three equal-sized sectors, and the influence of different numbers of outer ring inputs on the center current characteristics was observed. To validate the proposed physical models, Silvaco TCAD was used for verification in this chapter. A logic application based on coplanar oxide-layer devices was also proposed. Finally, in chapter 4, potential future research directions were suggested.