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標題: | Ku頻段低雜訊放大器和功率放大器的設計與實現 Design and Implementation of Ku-Band Low-Noise Amplifier and Power Amplifier |
作者: | 許博堯 Po-Yao Hsu |
指導教授: | 呂良鴻 Liang-Hung Lu |
關鍵字: | 互補式金屬氧化物半導體,低軌道衛星通訊,射頻,低雜訊放大器,功率放大器,寬頻,線性度, low earth orbit satellite communication (LEO),CMOS,radio frequency (RF),low-noise amplifier (LNA),power amplifier (PA),wideband,linearity, |
出版年 : | 2024 |
學位: | 碩士 |
摘要: | 本論文以TSMC 0.18-um CMOS製程實現適用於低軌道衛星通訊的射頻低雜訊放大器與功率放大器。
第一個晶片為接收端的低雜訊放大器,由於低軌道衛星通訊接收端分配到的頻寬高達2 GHz,故寬頻的設計是透過交錯頻率調整技術輔以頻寬延展技術來達成,而低雜訊是透過變壓器回授、正基體偏壓與電容負回授來實現。此晶片的3-dB頻寬為9.9 – 13.5 GHz,最大增益為17.1 dB,在其頻寬內的雜訊指數為4.4 – 5.4 dB。 第二個晶片為發射端的功率放大器,透過採用反相技術來達到基本的線性度提升,此外,基於該反相技術的兩級設計,本晶片再加入阻抗調整機制,來進一步優化其線性度的改善。此晶片的晶片上量測結果為,最大輸出功率為9.5 dBm,輸出1-dB壓縮點為8.8 dBm,而晶片上量測搭配印刷電路板的偏壓設計,最大輸出功率為9.4 dBm,輸出1-dB壓縮點為9.0 dBm,皆有高線性度的展現。 The low-noise amplifier and the power amplifier fabricated in TSMC 0.18-um CMOS process for low earth orbit satellite communication are discussed in this thesis. The proposed low-noise amplifier is completed with staggered tuning technique, bandwidth extension technique, gate-source transformer feedback, forward body bias, and capacitive negative feedback. Therefore, the characteristics of both wideband and low NF can be achieved. The measured results of the proposed low-noise amplifier show the 3-dB frequency of 9.9 - 13.5 GHz, the peak gain of 17.1 dB, and the NF of 4.4 - 5.4 dB. The proposed power amplifier is designed with antiphase technique for high linearity. In order to further improve the overall linearity, the impedance tuning network is inserted into the circuit. The proposed power amplifier shows saturated output power of 9.5 dBm and output 1-dB compression point of 8.8 dBm in on-wafer measurement, while output power of 9.4 dBm and output 1-dB compression point of 9.0 dBm in on-wafer measurement with PCB bias network, indicating that the proposed antiphase power amplifier with the impedance tuning network demonstrates high linearity. Overall, the design and implementation of Ku-band RF front-end circuits are completely presented. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/92382 |
DOI: | 10.6342/NTU202400747 |
全文授權: | 未授權 |
顯示於系所單位: | 電子工程學研究所 |
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ntu-112-2.pdf 目前未授權公開取用 | 17.16 MB | Adobe PDF |
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