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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 莊東漢 | zh_TW |
| dc.contributor.advisor | Tung-Han Chuang | en |
| dc.contributor.author | 陳胤宏 | zh_TW |
| dc.contributor.author | Yin-Hung Chen | en |
| dc.date.accessioned | 2023-10-03T17:08:38Z | - |
| dc.date.available | 2023-11-09 | - |
| dc.date.copyright | 2023-10-03 | - |
| dc.date.issued | 2023 | - |
| dc.date.submitted | 2023-08-07 | - |
| dc.identifier.citation | 維基百科，化石燃料[website]https://zh.m.wikipedia.org/zh-tw/%E5%8C%96%E7%9F%B3%E7%87%83%E6%96%99
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Agresti, S. Pescetelli, S. Bellani, A. E. D. R. Castillo, F. Bonaccorso, M. Tucci, A. Di Carlo, “Mechanically stacked, two-terminal graphene-based perovskite/silicon tandem solar cell with efficiency over 26%.” Joule, 4, 865 (2020). | - |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/90677 | - |
| dc.description.abstract | 太陽能是一種可再生能源，可以利用潔淨的能源技術將其轉換為電能。本研究第一部分運用直流磁控濺鍍(DCMS)以不同氧流率比(fO2)濺鍍p型CuxO薄膜作為鈣鈦礦太陽能電池的電洞傳輸層。研究發現在fO2=17.5%時可獲得較佳之能量轉換效率7.90%。接著我們改變不同Cu2O薄膜之厚度，發現膜層越薄效率越高，在膜厚5 nm時其能量轉換效率可升高至9.37%。隨後採用高功率脈衝磁控濺鍍(HiPIMS)系統鍍製p型Cu2O薄膜，元件之效率可達10.29%。因為HiPIMS具有高離化率的特點，鍍膜之薄膜更緻密且具有低表面粗糙度，此有助於減少薄膜內或界面的缺陷，使漏電流下降。進一步運用HiPIMS搭配中頻電源之疊加型高功率脈衝磁控濺鍍(疊加型HiPIMS)系統製備p型Cu2O薄膜以應用於鈣鈦礦太陽能電池之電洞傳輸層(HTL)，其能量轉換效率可進一步提升至15.20%，短路電流密度(Jsc)、開路電壓(Voc)和填充因子(FF)值分別為20.57 mA/cm2、0.977 V和76.5%，此能量轉換效率為近年在全世界採用各種不同製程之單層Cu2O薄膜應用於鈣鈦礦太陽能電池的電洞傳輸層之所有團隊中居於領先地位。
接著第二部分我們更進一步採用疊加型HiPIMS p型Cu2O薄膜並塗佈sol-gel NiO薄膜以形成雙層(疊加型HiPIMS Cu2O+濕式NiO)電洞傳輸層，研究發現元件能量轉換效率可再提升至20.15%，其Jsc、Voc和 FF值也分別再升高為23.26 mA/cm2、1.096V和79.0%。最後將元件放置於手套箱內測試其保存1000小時以上之元件穩定性，結果發現疊加型HiPIMS Cu2O單層電洞傳輸層元件仍可維持98%的初始效率，而雙層(疊加型HiPIMS Cu2O+濕式NiO)電洞傳輸層更可維持99.4%的初始效率。相較於文獻採用有機高分子電洞傳輸層在相同的測試環境及時間下元件效率僅剩下70~90%之間，顯然本研究採用無機p型氧化物薄膜作為鈣鈦礦太陽能電池電洞傳輸層不僅可獲得高能量轉換效率，同時也具有優異的界面穩定性及耐久性。 | zh_TW |
| dc.description.abstract | Solar light is a renewable source of energy that can be used and transformed into electricity using clean energy technology. In this study uses direct current magnetron sputtering (DCMS) to sputter p-type CuxO films with different fO2 as the hole transport layer for perovskite solar cells. The study shows better PCE of 7.90% when fO2=17.5%. By changing the thickness of Cu2O thin films, the higher PCE can be further increased to 9.37% when the thickness is 10 nm. Subsequently, a high-power impulse magnetron sputtering (HiPIMS) p-type Cu2O film offers improved device efficiency of 10.29%. As HiPIMS has the characteristics of a high ionization rate, it can make the film denser with low surface roughness, which reduces the defects of the film and interface and also reduces leakage current. In addition, use the superimposed high power pulse magnetron sputtering (superimposed HiPIMS) system to deposit p-type Cu2O films for application as the hole transport layer of perovskite solar cells. With this method, the PCE improved by 15.20%, Jsc, Voc, and FF are 20.57 mA/cm2, 0.977 V and 76.5%, respectively. This efficiency is in the leading position among all teams in the world in recent years using single-layer Cu2O film as the hole transport layer of perovskite solar cells.
In the second part, superimposed HiPIMS p-type Cu2O films were coated with sol-gel NiO films to form a double-layer hole transport layer. The device accomplishes significant efficiency as high as 20.15%, and the Jsc, Voc, and FF further increased to 23.26 mA/cm2, 1.096 V, and 79.0%. Finally, we kept the devices in a glove box for more than 1000 hours to test their stability. The superimposed HiPIMS single-layer Cu2O can remain at 98% of the initial efficiency, and the double-layer (superimposed HiPIMS Cu2O+sol-gel NiO) can even maintain 99.4%. Compared with the literature using organic polymer hole transport layer, only about 70-90% remains at the same aging time. In this study, inorganic p-type oxide film as a hole transport layer in perovskite solar cells not only achieves high PCE but also has excellent interface stability and durability. | en |
| dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2023-10-03T17:08:38Z No. of bitstreams: 0 | en |
| dc.description.provenance | Made available in DSpace on 2023-10-03T17:08:38Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | 口試委員審定書 i
誌 謝 ii 摘 要 iii Abstract v 圖目錄 x 表目錄 xvi 第一章 序論 1 1.1 前言 1 1.2 太陽光之放射光譜 4 1.3 太陽能電池簡介 6 1.4 研究動機與目的 7 第二章 理論基礎與文獻回顧 10 2.1元件結構發展 10 2.1.1有機太陽能電池之結構 10 2.1.2鈣鈦礦太陽能電池之結構 13 2.2鈣鈦礦太陽能電池簡介 15 2.3鈣鈦礦太陽能電池發電機制 16 2.4光電轉換之基本性質 17 2.4.1開路電壓 (Voc) 17 2.4.2短路電流 (Isc) 18 2.4.3填充因子 (FF) 18 2.4.4能量轉換效率 (PCE) 18 2.5高功率脈衝磁控濺鍍技術 20 2.5.1 高功率脈衝磁控濺鍍系統鍍製氧化物薄膜之優勢及理由 22 2.5.2 新型薄膜結構型態 28 2.6氧化亞銅及氧化鎳之特性 29 2.6.1 氧化亞銅之基本性質 29 2.6.2 氧化鎳之基本性質 31 2.7文獻回顧 32 2.7.1傳統磁控濺鍍製備Cu2O薄膜之相關研究成果 32 2.7.2 鈣鈦礦太陽能電池中Cu2O薄膜的相關研究成果 33 第三章 實驗方法及步驟 36 3.1基板準備與前處理 36 3.1.1 基板選取 36 3.1.2 基板前處理與清洗 36 3.2靶材選取與濺鍍設備 37 3.2.1 DCMS系統鍍製Cu2O薄膜 37 3.2.2 HiPIMS系統鍍製Cu2O薄膜 39 3.2.3 疊加型HiPIMS系統鍍製Cu2O薄膜 41 3.3鈣鈦礦太陽能電池元件製作 44 3.4薄膜性質分析儀器 45 3.4.1 X光繞射分析 (XRD) 45 3.4.2原子力顯微鏡 (AFM) 46 3.4.3紫外光/可見光光譜儀 (UV-Vis) 47 3.4.4四點探針量測 (Four point probe) 49 3.4.5螢光光譜儀 (PL) 50 3.4.6光電子能譜儀 (ESCA) 51 3.4.7紫外光光電子能譜儀 (UPS) 52 3.5元件性質分析儀器 53 3.5.1太陽光模擬器 (AAA Class Solar Simulators) 53 3.5.2外部量子效率 (EQE) 54 3.5.3時間解析螢光光譜儀 (TRPL) 55 3.5.4瞬態光電流 (TPC) 55 3.5.5瞬態光電壓 (TPV) 56 3.5.6通過線性增加電壓提取電荷 (CELIV) 56 3.5.7電化學阻抗分析 (EIS) 56 第四章 結果與討論 57 4.1 DCMS Cu2O薄膜應用於鈣鈦礦太陽能電池之電洞傳輸層 57 4.1.1 DCMS不同fO2製備Cu2O薄膜 57 4.1.2 DCMS Cu2O薄膜不同fO2之元件光電性能 63 4.1.3 DCMS Cu2O薄膜不同膜厚之元件光電性能 65 4.1.4小結 70 4.2 HiPIMS Cu2O薄膜應用於鈣鈦礦太陽能電池之電洞傳輸層 71 4.2.1 HiPIMS不同fO2製備Cu2O薄膜 71 4.2.2 HiPIMS Cu2O薄膜不同fO2之元件光電性能 73 4.2.3小結 74 4.3疊加型HiPIMS Cu2O薄膜應用於鈣鈦礦太陽能電池之電洞傳輸層 75 4.3.1疊加型HiPIMS不同fO2製備Cu2O薄膜 75 4.3.2疊加型HiPIMS Cu2O薄膜不同fO2元件之光電性能 76 4.3.3小結 78 4.4比較不同電源模式製備Cu2O薄膜應用於鈣鈦礦太陽能電池之電洞傳輸層 79 4.4.1不同電源模式之UV-Vis分析 79 4.4.2不同電源模式之AFM分析 80 4.4.3不同電源模式之水接觸角分析 82 4.4.4不同電源模式之元件性能 83 4.4.5不同電源模式之OES分析 86 4.4.6不同電源模式之UPS分析 88 4.4.7疊加型HiPIMS元件之室內弱光性能 89 4.4.8疊加型HiPIMS元件之穩定性 90 4.4.9小結 92 4.5 Cu2O/NiO雙層膜應用於鈣鈦礦太陽能電池之電洞傳輸層 93 4.5.1 DCMS Cu2O/濕式NiO雙層膜 93 4.5.2疊加型HiPIMS Cu2O/濕式NiO雙層膜 96 4.5.3小結 114 第五章 結論 115 未來展望 116 參考文獻 118 個人簡介 130 | - |
| dc.language.iso | zh_TW | - |
| dc.subject | 高功率脈衝磁控濺鍍 | zh_TW |
| dc.subject | 能量轉換效率 | zh_TW |
| dc.subject | 直流磁控濺鍍 | zh_TW |
| dc.subject | Cu2O薄膜 | zh_TW |
| dc.subject | 穩定性 | zh_TW |
| dc.subject | 疊加型高功率脈衝磁控濺鍍 | zh_TW |
| dc.subject | DCMS | en |
| dc.subject | Cu2O films | en |
| dc.subject | HiPIMS | en |
| dc.subject | superimposed HiPIMS | en |
| dc.subject | power conversion efficiency (PCE) | en |
| dc.subject | stability | en |
| dc.title | 氧化亞銅薄膜之高功率脈衝磁控濺鍍製程開發及其在鈣鈦礦太陽能電池之應用 | zh_TW |
| dc.title | Development of high-power impulse magnetron sputtering process of Cu2O thin films and its application of perovskite solar cells | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 111-2 | - |
| dc.description.degree | 博士 | - |
| dc.contributor.coadvisor | 陳勝吉 | zh_TW |
| dc.contributor.coadvisor | Sheng-Chi Chen | en |
| dc.contributor.oralexamcommittee | 陳志平;周眾信;王彰盟 | zh_TW |
| dc.contributor.oralexamcommittee | Chih-Ping Chen;Ju-Stin Chou;Chang-Meng Wang | en |
| dc.subject.keyword | Cu2O薄膜,直流磁控濺鍍,高功率脈衝磁控濺鍍,疊加型高功率脈衝磁控濺鍍,能量轉換效率,穩定性, | zh_TW |
| dc.subject.keyword | Cu2O films,DCMS,HiPIMS,superimposed HiPIMS,power conversion efficiency (PCE),stability, | en |
| dc.relation.page | 131 | - |
| dc.identifier.doi | 10.6342/NTU202302626 | - |
| dc.rights.note | 同意授權(限校園內公開) | - |
| dc.date.accepted | 2023-08-09 | - |
| dc.contributor.author-college | 工學院 | - |
| dc.contributor.author-dept | 材料科學與工程學系 | - |
| dc.date.embargo-lift | 2026-08-06 | - |
| 顯示於系所單位： | 材料科學與工程學系 | |
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