短脈衝雷射在比較器電路內誘發單事件瞬態現象之分析方式建立

Abstract

隨著太空元件抗輻射的檢測技術逐漸發展成熟，為了因應日漸壯大的太空產業，各國相繼發展出相較於傳統使用高能粒子加速器還要快速以及實惠的脈衝雷射檢測技術來進行元件單事件效應之測試，然而使用脈衝雷射來進行晶片抗輻射檢測也遭遇了分析技術上的瓶頸，包括雷射與高能粒子之間的量化對照，以及雷射會遭到元件上的金屬層阻擋的影響。 因此，本篇論文之目的即為建立一套用於分析脈衝雷射對晶片進行輻射效應測試的分析方式，首先針對客製化之待測元件建立脈衝雷射單事件效應照射實驗，並透過此實驗來取得實驗結果之相關數據，再根據這些實驗數據進行待測晶片的模擬建置以及進行模擬分析，並且將此模擬分析所獲得的結果用來與待測晶片在virtuoso模擬所獲得的結果進行對照，透過兩者的結果對照可以看到本論文的分析結果是與virtuoso結果相近的，從而驗證了此分析方式的可行性，進而建立起了脈衝雷射對晶片進行輻射效應測試之分析方式。 論文的最後也提出了此分析方式可以優化的部分，如此一來便可以使分析結果更加精確，期許此分析方式未來能夠應用於脈衝雷射在不同晶片之輻射效應的照射的分析。

As the radiation resistance detection technology of space components gradually matures, in order to cope with the growing space industry, countries have successively developed pulsed laser detection technology that is faster and more affordable than the traditional use of high-energy particle accelerators to detect single-event effects in the chip. However, the use of pulsed lasers for chip radiation resistance testing also encountered analytical technical bottlenecks, including the quantitative comparison between lasers and high-energy particles, and the impact of lasers being blocked by metal layers on components. Therefore, the purpose of this paper is to establish a set of analysis methods for analyzing the radiation effect of pulsed laser on chips. At first, an experiment is done to obtain the relevant data of the experimental results, and then carry out the simulation construction and simulation analysis of the chip under test based on these experimental data, finally the results obtained by this simulation analysis is putting into compare with the results obtained by the VIRTUOSO simulation. Through the comparison of the two results, it can be seen that the analysis results of this paper are similar to the results of VIRTUOSO, thus verifying the feasibility of this analysis method, and then establishing an analysis method for the radiation effect test of the pulsed laser on the chip . At the end of the paper, it is also proposed that this analysis method can be optimized, so that the analysis results can be more accurate. It is expected that this analysis method can be applied to the analysis of the radiation effect of pulsed lasers on different chips in the future.