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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/88694
標題: | 碳化矽驅動IC切換行為建模 Switching Behavior Model for SiC Driver IC |
作者: | 段祥勇 Siang-Yung Duan |
指導教授: | 陳景然 Ching-Jan Chen |
關鍵字: | 碳化矽電晶體,閘級驅動器,等效電路模型,雙脈衝實驗, SiC MOSFET,Gate Driver,Double Pulse Test, |
出版年 : | 2023 |
學位: | 碩士 |
摘要: | 隨著環保意識抬頭,汽油車數量逐漸下降,取而代之的電動車數量日益增加,因此針對電動馬達與充電器的功率密度與效率的要求也隨之提高,其中寬能隙半導體中的碳化矽扮演了重要的角色。碳化矽電晶體相較於傳統的矽製程電晶體有著更寬的能隙、更高的擊穿場強度以及更大的熱導率,除此之外更有較低的導通電阻及低輸入閘級電荷,因此適用於高電壓、高電流和高切換頻率應用,可提高轉換器功率密度以及效率。本文針對碳化矽(SiC)電晶體開關之閘極驅動器(Gate Driver)及驅動板(PCB of Gate Driver)建立等效電路模型,此模型可以與廠商提供的碳化矽積體電路通用程式模型(SPICE model)整合以模擬碳化矽開關之切換行為。因為碳化矽其低輸入閘級電荷且常用於高切換頻率、高電壓和高電流,閘級驅動器模型會大大影響碳化矽切換表現,進而影響切換損失。因此本文改善傳統閘級驅動器建模方法並加入驅動板寄生參數,使等效電路的模擬更貼近量測結果。新的建模方法使閘級驅動器的輸出上升(下降)時間與實驗結果誤差相較於舊的建模方式相比誤差從15%降至1%以內,其建模過程經由實驗與數學轉移函數進行驗證。此外運用雙脈衝實驗分析碳化矽元件的切換行為,也運用計算與量測分析電路上的寄生參數並驗證廠商提供之碳化矽積體電路通用程式模型是否與量測之間有誤差。精準的等效電路模型有助於設計者設計驅動板的寄生參數,用來防止誤開關以及擊穿碳化矽切換元件的閘極,以及預測和評估碳化矽元件的切換行為,利於日後對寬能隙切換元件與閘極驅動器之開發。 With the rise of environmental awareness, the number of diesel vehicles is gradually decreasing, and the number of electric vehicles is increasing. As a result, the requirements for power density and efficiency of electric motors and chargers are also increasing. In this regard, silicon carbide in wide-bandgap semiconductors plays a significant role. Silicon carbide (SiC) transistors, compared to traditional silicon-based transistors, have a wider energy gap, higher breakdown field strength, and greater thermal conductivity. Additionally, they have lower on-resistance and input gate charge, making them suitable for high voltage, high current, and high switching frequency applications. This improves power density and efficiency in converters. This thesis proposed an equivalent circuit for the gate driver board of SiC MOSFETs including gate driver IC and parasitic components of the printed circuit board (PCB), making the simulation of the equivalent circuit closer to the measurement results. Compared with the old modeling methods, the new modeling methods reduces the error between the simulation and measurement for VGS rising (falling) time from 15% to less than 1%. The modeling process is validated through experiments and mathematical transfer functions. Accurate equivalent circuits aid designers in designing the parasitic parameters of the gate driver board to prevent false triggering and gate breakdown of the silicon carbide (SiC) switching devices. They also help in predicting and evaluating the switching behavior of SiC devices, which is beneficial for the future development of wide bandgap switching devices and gate driver circuits. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/88694 |
DOI: | 10.6342/NTU202301827 |
全文授權: | 同意授權(全球公開) |
顯示於系所單位: | 電機工程學系 |
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ntu-111-2.pdf | 5.53 MB | Adobe PDF | 檢視/開啟 |
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