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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 陳景然 | zh_TW |
dc.contributor.advisor | Ching-Jan Chen | en |
dc.contributor.author | 段祥勇 | zh_TW |
dc.contributor.author | Siang-Yung Duan | en |
dc.date.accessioned | 2023-08-15T17:24:07Z | - |
dc.date.available | 2023-11-10 | - |
dc.date.copyright | 2023-08-15 | - |
dc.date.issued | 2023 | - |
dc.date.submitted | 2023-07-31 | - |
dc.identifier.citation | [1] Helong Li, Stig Munk-Nielsen, “Detail Study of SiC MOSFET Switching” IEEE 5th International Symposium on Power Electronics for Distr-ibuted Generation Systems (PEDG) pp.1-5, June 2014
[2] Vamshi Krishna M, Kamalesh Hatua, “Closed loop analog active gate driver for fast switching and active damping of SiC MOSFET” IEEE Applied Power Electronics Conference and Exposition (APEC), San Antonio, TX, USA, 2018, pp. 3017-3021 [3] Zheyu Zhang, Fred Wang, Leon M. Tolbert, Benjamin J. Blalock, “A no-vel gate assist circuit for cross talk mitigation of SiC power devices in a phase-leg configuration” Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC), Long Beach, CA, USA, 2013, pp. 1259-1265 [4] ROHM [Online]. Available:https://www.rohm.com.tw/electronics-basics/sic/sic_what1 [5] Onsemi, GaN vs. SiC Transistors, Power Electronics News [6] ROHM [Online]. Available:https://www.rohm.com.tw/electronics-basics/sic/sic_what3 [7] KKNEWS [Online]. Available: https://kknews.cc/tech/kxax64b.html [8] Zheyu Zhang, Ben Guo, Fei Fred Wang, Edward A. Jones, Leon M. Tol-bert, Benjamin J. Blalock, “Methodology for Wide Band-Gap Device Dynamic Characterization” IEEE Transactions on Power Electronics, vol. 32, no. 12, pp. 9307-9318, Dec. 2017 [9] S.S.Ahmad,G.Narayanan,“Double pulse test based switching characterization of SiC MOSFET” National Power Electronics Conference (NPEC), Pune, India, 2017, pp. 319-324 [10] Alejandro Paredes Camacho, Vicent Sala, Hamidreza Ghorbani, Jose Luis Romeral Martinez, “A Novel Active Gate Driver for Improving SiC MOSFE-T Switching Trajectory” IEEE Transactions on Industrial Electronics, vol. 64, no. 11, pp. 9032-9042, Nov. 2017 [11] Zheyu Zhang, Fred Wang, Leon M.Tolbert, Benjamin J.Blalock, “A gate assist circuit for cross talk suppression of SiC devices in a phase leg configuration” IEEE Energy Conversion Congress and Exposition pp. 684-691, March 2016 [12] Tianjiao Liu, Runtao Ning, Thomas T. Y. Wong, Z. John Shen, “Modeli-ng and Analysis of SiC MOSFET Switching Oscillations” IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 4, no. 3, pp. 747-756, Sept. 2016 [13] Xudong Wang, Zhengming Zhao, Yicheng Zhu;Kainan Chen;Liqiang Yuan,“A comprehensive study on the gate-loop stability of the SiC MOSFET” IEEE Energy Conversion Congress and Exposition (ECCE), Cincinnati, OH, USA, 2017, pp. 3012-3018 [14] Arthur G. Black, “Impact of Source Inductance on Synchronous Buck Reg-ulator FET Shoot Through Performance” IEEE Power Electronics Specialists Conference, Orlando, FL, USA, 2007, pp. 981-986 [15] Yuan Yang, Yang Wen, Yong Gao, “A Novel Active Gate Driver for Improving Switching Performance of High-Power SiC MOSFET Modules” 2019 IEEE Transactions on Power Electronics [16] Md Rishad Ahmed, Rebecca Todd, Andrew J. Forsyth, “Predicting SiC MOSFET Behavior Under Hard-Switching, Soft-Switching, and False Turn-On Conditions” 2017 IEEE Transactions on Industrial Electronics [17] Zheyu Zhang, Fred Wang; Leon M. Tolbert;Benjamin J. Blalock, “A novel gate assist circuit for cross talk mitigation of SiC power devices in a phase-leg configuration” Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC), Long Beach, CA, USA, 2013, pp. 1259-1265 [18] Paco Bogónez-Franco, Josep Balcells Sendra, “EMI comparison between Si and SiC technology in a boost converter” International Symposium on Electromagnetic Compatibility - EMC EUROPE, Rome, Italy, 2012, pp. 1-4 [19] Yanick Lobsiger, Johann W. Kolar,” Closed-Loop di/dt and dv/dt IGBT Gate Driver” IEEE Transactions on Power Electronics, vol. 30, no. 6, pp. 3402-3417, June 2015 [20] J. Rice and J. Mookken, "SiC MOSFET gate drive design considerations," IEEE International Workshop on Integrated Power Packaging (IWIPP), Chicago, IL, USA, 2015, pp. 24-27 [21] Alejandro Paredes, Vicent Sala, Hamidreza Ghorbani, Luis Romeral, “A novel active gate driver for silicon carbide MOSFET” IECON 2016 - 42nd Annual Conference of the IEEE Industrial Electronics Society, Florence, Italy, 2016, pp. 3172-3177 [22] Harry C. P. Dymond, Jianjing Wang, Dawei Liu, Jeremy J. O. Dalton, Neville McNeill, Dinesh Pamunuwa, Simon J. Hollis, Bernard H. Stark” A 6.7-GHz Active Gate Driver for GaN FETs to Combat Overshoot, Ringing, and EMI” IEEE Transactions on Power Electronics, vol. 33, no. 1, pp. 581-594, Jan. 2018 [23] Parthasarathy Nayak, Kamalesh Hatua, “Active Gate Driving Technique for a 1200 V SiC MOSFET to Minimize Detrimental Effects of Parasitic Inductan-ce in the Converter Layout” EEE Transactions on Industry Applications, vol. 54, no. 2, pp. 1622-1633, March-April 2018 [24] Hossein Riazmontazer, Arash Rahnamaee, Alireza Mojab, Siamak Mehrnami, Sudip K. Mazumder, Milos Zefran,”Closed-loop control of switching tr-ansition of SiC MOSFETs” IEEE Applied Power Electronics Conference and Exposition (APEC), Charlotte, NC, USA, 2015, pp. 782-788 [25] NXP Semiconductors, “MC33GD3100 Advanced IGBT/SiC Gate Driver Datasheet”, 2020 [26] “FRDMGD3160DCMHB” NXP. [27] Qing Xin, Han Peng, Zhipeng Cheng, Jimin Chen,” A Novel SiC Device Modeling With Power Stage and Gate Driver Decoupling,” IEEE 4th International Electrical and Energy Conference (CIEEC), Wuhan, China, 2021, pp. 1-6 [28] Jin Zhao, Jianzhong Zhang, Haifu Wu, Yaqian Zhang,” Design of Gate Driver and Power Device Evaluation Platform for SiC MOSFETS,” 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), Xi'an, China, 2018, pp. 1-6 [29] Ruiliang Xie, Guangzhao Xu, Xu Yang, Gaofei Tang, Jin Wei, Yidong Tian, Feng Zhang, Wenjie Chen, Laili Wang, and Kevin J. Chen, “Modeling the Gate Driver IC for GaN Transistor: A Black-Box Approach” IEEE Applied Power Electronics Conference and Exposition (APEC), San Antonio, TX, USA, 2018, pp. 2900-2904 [30] W. Dghais, T. R. Cunha, J. C. Pedro, “Behavioral model for high-speed digital buffer/driver” Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits, Gothenburg, Sweden, 2010, pp. 110-113 [31] Christophe P. Basso ON Semiconductor, Toulouse, France, “Linear Circuit Transfer Function: An Introduction to Fast Analytical Techniques.” [32] BoChen Shi, Zhengming Zhao, YiCheng Zhu, Xudong Wang,” Time-Domain and Frequency-Domain Analysis of SiC MOSFET Switching Transients Considering Transmission of Control, Drive, and Power Pulses” IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 9, no. 5, pp. 6441-6452, Oct. 2021 [33] Cheng Qian, Zhiqiang Wang, Guoqing Xin, and Xiaojie Shi, “Datasheet Driven Switching Loss, Turn-ON/OFF Overvoltage, di/dt, and dv/dt Prediction Method for SiC MOSFET” IEEE Transactions on Power Electronics, vol. 37, no. 8, pp. 9551-9570, Aug. 2022 [34] Xudong Wang, Zhengming Zhao, Kai Li, Yicheng Zhu, and Kainan Chen, “Analytical Methodology for Loss Calculation of SiC MOSFETs” IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 7, no. 1, pp. 71-83, March 2019 [35] https://www.youtube.com/watch?v=4-MpZZQ5Suk | - |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/88694 | - |
dc.description.abstract | 隨著環保意識抬頭,汽油車數量逐漸下降,取而代之的電動車數量日益增加,因此針對電動馬達與充電器的功率密度與效率的要求也隨之提高,其中寬能隙半導體中的碳化矽扮演了重要的角色。碳化矽電晶體相較於傳統的矽製程電晶體有著更寬的能隙、更高的擊穿場強度以及更大的熱導率,除此之外更有較低的導通電阻及低輸入閘級電荷,因此適用於高電壓、高電流和高切換頻率應用,可提高轉換器功率密度以及效率。本文針對碳化矽(SiC)電晶體開關之閘極驅動器(Gate Driver)及驅動板(PCB of Gate Driver)建立等效電路模型,此模型可以與廠商提供的碳化矽積體電路通用程式模型(SPICE model)整合以模擬碳化矽開關之切換行為。因為碳化矽其低輸入閘級電荷且常用於高切換頻率、高電壓和高電流,閘級驅動器模型會大大影響碳化矽切換表現,進而影響切換損失。因此本文改善傳統閘級驅動器建模方法並加入驅動板寄生參數,使等效電路的模擬更貼近量測結果。新的建模方法使閘級驅動器的輸出上升(下降)時間與實驗結果誤差相較於舊的建模方式相比誤差從15%降至1%以內,其建模過程經由實驗與數學轉移函數進行驗證。此外運用雙脈衝實驗分析碳化矽元件的切換行為,也運用計算與量測分析電路上的寄生參數並驗證廠商提供之碳化矽積體電路通用程式模型是否與量測之間有誤差。精準的等效電路模型有助於設計者設計驅動板的寄生參數,用來防止誤開關以及擊穿碳化矽切換元件的閘極,以及預測和評估碳化矽元件的切換行為,利於日後對寬能隙切換元件與閘極驅動器之開發。 | zh_TW |
dc.description.abstract | With the rise of environmental awareness, the number of diesel vehicles is gradually decreasing, and the number of electric vehicles is increasing. As a result, the requirements for power density and efficiency of electric motors and chargers are also increasing. In this regard, silicon carbide in wide-bandgap semiconductors plays a significant role. Silicon carbide (SiC) transistors, compared to traditional silicon-based transistors, have a wider energy gap, higher breakdown field strength, and greater thermal conductivity. Additionally, they have lower on-resistance and input gate charge, making them suitable for high voltage, high current, and high switching frequency applications. This improves power density and efficiency in converters.
This thesis proposed an equivalent circuit for the gate driver board of SiC MOSFETs including gate driver IC and parasitic components of the printed circuit board (PCB), making the simulation of the equivalent circuit closer to the measurement results. Compared with the old modeling methods, the new modeling methods reduces the error between the simulation and measurement for VGS rising (falling) time from 15% to less than 1%. The modeling process is validated through experiments and mathematical transfer functions. Accurate equivalent circuits aid designers in designing the parasitic parameters of the gate driver board to prevent false triggering and gate breakdown of the silicon carbide (SiC) switching devices. They also help in predicting and evaluating the switching behavior of SiC devices, which is beneficial for the future development of wide bandgap switching devices and gate driver circuits. | en |
dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2023-08-15T17:24:07Z No. of bitstreams: 0 | en |
dc.description.provenance | Made available in DSpace on 2023-08-15T17:24:07Z (GMT). No. of bitstreams: 0 | en |
dc.description.tableofcontents | 致謝 I
中文摘要 III Abstract V Table of Contents VI List of Figure IX List of Tables XIV Chapter 1 Introduction 1 1.1 Research Background 1 1.2 Thesis Motivation 2 1.3 Thesis Outline 3 Chapter 2 Review of SiC Transistor and Issues of Switching Transition 4 2.1 Brief Review of Silicon Carbide Transistor 5 2.2 Introduction of Double Pulse Test (DPT) 8 2.3 Switching Transition of SiC Transistor 11 2.3.1 Turn-On Procedure 11 2.3.2 Turn-Off Procedure 13 2.3.3 Switching Loss 16 2.3.4 Slope of Voltage and Current at Turn-on/off Procedure 17 2.4 Challenge of Switching Transition of SiC Transistor 20 2.4.1 Overshoot 20 2.4.2 Oscillation 21 2.4.3 Cross-talk 23 2.4.4 Electromagnetic Interference (EMI) Noise 24 2.5 Solutions for Non-ideal Effects 25 2.5.1 Adding Gate Resistor 25 2.5.2 Adding Gate Capacitance and Negative Voltage 25 2.5.3 Optimization of the PCB Layout and Package of MOSFET 26 2.5.4 Active Gate Driver (AGD) 27 2.6 Summary 30 Chapter 3 Proposed Model for Gate Driver 31 3.1 Gate Driver Model and Add the Parasitic Inductances 32 3.2 Verification of Transfer Functions 37 3.3 Experimental Verification 44 Chapter 4 Double Pulse Test (DPT) with Single Die and Multiple Dies 53 4.1 Non-ideal Switching Process 54 4.2 DPT with Single Die 58 4.2.1 Measurement Setup of DPT 59 4.2.2 Simulation Setup of DPT 63 4.2.3 Comparison between Measurement and Simulation Results 67 4.3 DPT with Multiple Dies 69 4.3.1 DPT Simulation without any Parasitic Elements Included 74 4.3.2 DPT Simulation with Parasitic Elements Included 76 4.4 Summary 80 Chapter 5 Gate Charge between SPICE Model and Measurement 81 5.1 Gate Charge 81 5.1.1 Gate charge of IGBTs in Different VDS Voltage 82 5.1.2 Gate Charge of SiC MOSFET 84 5.2 Summary 90 Chapter 6 Conclusion and Future Works 91 6.1 Conclusions 91 6.2 Future works 92 Reference 93 | - |
dc.language.iso | en | - |
dc.title | 碳化矽驅動IC切換行為建模 | zh_TW |
dc.title | Switching Behavior Model for SiC Driver IC | en |
dc.type | Thesis | - |
dc.date.schoolyear | 111-2 | - |
dc.description.degree | 碩士 | - |
dc.contributor.oralexamcommittee | 陳耀銘;林景源 | zh_TW |
dc.contributor.oralexamcommittee | Yaow-Ming Chen;Jing-Yuan Lin | en |
dc.subject.keyword | 碳化矽電晶體,閘級驅動器,等效電路模型,雙脈衝實驗, | zh_TW |
dc.subject.keyword | SiC MOSFET,Gate Driver,Double Pulse Test, | en |
dc.relation.page | 97 | - |
dc.identifier.doi | 10.6342/NTU202301827 | - |
dc.rights.note | 同意授權(全球公開) | - |
dc.date.accepted | 2023-08-02 | - |
dc.contributor.author-college | 電機資訊學院 | - |
dc.contributor.author-dept | 電機工程學系 | - |
顯示於系所單位: | 電機工程學系 |
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