請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/88140
標題: | 氧化層電荷對金氧半穿隧二極體在反轉區之電流及電容特性之影響 Impact of Oxide Charges on the Current and Capacitance Characteristics of Metal-Insulator-Semiconductor Tunneling Diode in Inversion Region |
作者: | 陳冠竹 Kuan-Chu Chen |
指導教授: | 胡振國 Jenn-Gwo Hwu |
關鍵字: | 金氧半穿隧二極體,金氧半電容,蕭特基能障調變,深空乏,氧化層電荷,橫向耦合,解析模型,穩態, MIS tunnel diode,MIS capacitor,Schottky barrier height modulation,Deep depletion,Oxide charge,Lateral coupling,Analytical model,Steady state, |
出版年 : | 2023 |
學位: | 博士 |
摘要: | 本論文討論了氧化層電荷對於鋁/二氧化矽/p 型矽之金屬-氧化層-半導體穿隧二極體(金氧半穿隧二極體) 在反偏壓下電氣特性的影響。我們提出了三個模型分別討論了金氧半穿隧二極體的高頻電容、電流及變頻電容特性。每一項特性皆經過實驗量測的驗證。我們的實驗使用了半徑85 微米的圓形金氧半穿隧二極體,氧化層厚度大約在25埃,基板摻雜濃度為10^16 cm^−3。首先,我們討論了金氧半穿隧二極體的高頻電容特性。臨界電壓的決定對於高頻電容特性至關重要。在施加電壓小於臨界電壓時,金氧半穿隧二極體的高頻電容特性和傳統金氧半電容類似。然而,當施加電壓大於臨界電壓時,金氧半穿隧二極體會進入深空乏區,其高頻電容特性變得類似於蕭特基二極體。我們推導了一個模型以解釋氧化層電荷和氧化層厚度對於臨界電壓的影響。對我們的元件而言,2.8 × 10^11 cm^−2 的氧化層電荷濃度足以引起大於10^4 微米的橫向直流耦合距離,這一極長的耦合距離會導致臨界電壓提升1伏特以上。接著,我們討論了金氧半穿隧二極體的電流特性。氧化層電荷會導致橫向耦合並提供額外的電子補充,這會提升蕭特基能障調變的程度。顯著的蕭特基能障調變會提升電洞電流的注入甚至主導金氧半穿隧二極體的電流。我們對於蕭特基能障調變及電洞電流做了詳細的計算與探討。在我們的元件之中,2.8 × 10^11 cm^−2 的氧化層電荷濃度足以導致蕭特基能障下降1電子伏特,並使總電流上升超過四個數量級。最後,我們討論了金氧半穿隧二極體的變頻電容特性。氧化層電荷會造成一個隨量測頻率變動的橫向控制區。這個橫向控制區會對量測到的電容值造成影響,我們建立了一個模型以討論此影響。根據我們的計算結果,在量測頻率10kHz 之下2.8 × 10^11 cm^−2 的氧化層電荷濃度足以引起53微米的橫向交流訊號控制區。這個大小的控制區可以使量測到的電容值上升約50%。以上的討論強調了氧化層電荷在金氧半穿隧二極體所扮演角色的重要性。相信本論文所提出的計算與分析對於金氧半穿隧二極體的設計與認識有相當程度的幫助。 This work comprehensively discusses the influences of outer oxide charges (𝑄_eff) on the electrical characteristics of Al/SiO2/Si(p) metal-insulator-semiconductor tunnel diode (MISTD) in the reverse-biased region. Three models are proposed for the high-frequency capacitance-voltage (HFCV), current-voltage (IV), and capacitance-frequency (CF) characteristics of MISTD. For each characteristic, experiments were carried out for discussion. The measured circle devices have an oxide thickness of around 25 Å, a radius of 85 𝜇m, and a doping concentration of 10^16 cm^−3. First, the HFCV of MISTD is discussed. For HFCV, determination of critical voltage 𝑉_C is of importance. At 𝑉_G < 𝑉_C, where 𝑉_G is the bias voltage applied on metal, MISTD acts like a traditional MOS capacitor. However, at 𝑉_G > 𝑉_C, MISTD enters the deep depletion region and acts like a Schottky diode. A procedure for calculating the dependency of 𝑉_C on oxide charges and oxide thickness is proposed. It was founded that an amount of 2.8×10^11 cm^−2 of 𝑄_eff/𝑞 can lead to a DC lateral decay length larger than 10^4 𝜇m and let 𝑉_C increase for over 1 V. Second, the IV of MISTD is discussed. Oxide charges will enhance the supplement of electrons from the lateral region and affect the level of Schottky barrier height modulation (SBHM). Significant SBHM leads to a high hole injection current, which can dominate the current of a MISTD. Detailed calculation of SBHM and the effect on hole current are explored. It was found that an amount of 2.8 × 10^11 cm^−2 of 𝑄_eff/𝑞 can let the hole’s Schottky barrier height decrease for over 1 eV and enhance the MISTD’s current for over four orders. Finally, the CF relation is discussed. Oxide charges will cause a frequency-dependent lateral control region for MISTD. The lateral control region contributes extra capacitance to the total capacitance. A model considering the impact of oxide charges on capacitance value was proposed. The calculation from our model shows that an amount of 𝑄_eff/𝑞 = 2.8 × 10^11 cm^−2 can induce a lateral AC control distance for about 53 𝜇m at 10 kHz and increase the measured capacitance by around 50%. The above studies highlight the importance of outer oxide charges in MISTD. It is believed that the proposed detailed calculations and analysis in this work are helpful for designing and understanding MISTD. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/88140 |
DOI: | 10.6342/NTU202301459 |
全文授權: | 同意授權(全球公開) |
顯示於系所單位: | 電子工程學研究所 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-111-2.pdf | 4.66 MB | Adobe PDF | 檢視/開啟 |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。