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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/81624完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 陳俊維(Chun-Wei Chen) | |
| dc.contributor.author | Yu-Ling Liu | en |
| dc.contributor.author | 劉育伶 | zh_TW |
| dc.date.accessioned | 2022-11-24T09:24:51Z | - |
| dc.date.available | 2022-11-24T09:24:51Z | - |
| dc.date.copyright | 2022-02-16 | |
| dc.date.issued | 2022 | |
| dc.date.submitted | 2022-02-11 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/81624 | - |
| dc.description.abstract | 二維過渡金屬二硫族化物的摻雜技術是當前相當重要的課題，有效的摻雜方法將會大幅擴展此材料在各方面的應用。本實驗使用高分子輔助沉積法將金屬前驅物塗佈於藍寶石基板，並在化學氣相沉積系統中進行煅燒、預退火及硫化。使用高分子能確保金屬前驅物在基板上均勻地分散，並有效包裹金屬前驅物免於不必要的化學反應。欲摻雜過渡金屬原子時，此方法展現便利性，且摻雜原子與母相原子在溶液中均勻的混合有助於提升成功摻雜的可能性。同時，高分子輔助沉積法低成本、可塗佈於各種表面等特性，使其充分展現了應用潛力。 在本報告中，首先針對成長純二硫化鉬、二硫化鎢的實驗結果進行成長機制的討論，並探討兩種材料之間在成長上的差異。第二部分，我們基於這兩種材料的差異，在硫化前的退火階段調控氣氛，臨場改變反應中的蒸氣壓，以達到均勻的二硫化鉬鎢合金。此外，我們也將提出以高分子輔助沉積成長二硫化鉬－二硫化鎢平面異質結構以及大面積二硫化鎢的想法。 | zh_TW |
| dc.description.provenance | Made available in DSpace on 2022-11-24T09:24:51Z (GMT). No. of bitstreams: 1 U0001-0802202214493500.pdf: 23705267 bytes, checksum: 67587cb249efab8ab204316b4343ba57 (MD5) Previous issue date: 2022 | en |
| dc.description.tableofcontents | "口試委員會審定書 # 誌謝 i 中文摘要 ii ABSTRACT iii CONTENTS iv LIST OF FIGURES vi LIST OF TABLES x Chapter 1 前言 1 Chapter 2 過渡金屬二硫族化物的摻雜與合金 2 2.1 過渡金屬二硫族化物的摻雜 2 2.2 過渡金屬二硫族化物的合金 5 2.3 過渡金屬二硫族化物摻雜與合金的製備方法 7 2.3.1 物理氣相沉積法(Physical Vapor Deposition, PVD) 7 2.3.2 化學氣相沉積法(Chemical Vapor Deposition, CVD) 8 2.3.3 有機金屬化學氣相沉積法(Metal-Organic Chemical Vapor Deposition, MOCVD) 9 Chapter 3 實驗方法與設備介紹 10 3.1 高分子輔助沉積法介紹 10 3.2 聚乙烯醇輔助化學氣相沉積法 13 3.2.1 基板前處理 14 3.2.2 溶液製備 14 3.2.3 低壓化學氣相沉積法 14 3.3 轉印 16 3.4 材料分析與鑑定 17 3.4.1 光學顯微鏡(Optical Microscopy, OM) 17 3.4.2 拉曼光譜(Raman Spectroscopy) 17 3.4.3 光致發光光譜(Photoluminescence Spectroscopy) 19 3.4.4 X射線光電子能譜(X-ray Photoelectron Spectroscopy, XPS) 21 3.4.5 原子力顯微鏡(Atomic Force Microscopy, AFM) 22 3.4.6 掃描式電子顯微鏡(Scanning Electron Microscopy, SEM) 23 3.4.7 穿透式電子顯微鏡(Transmission Electron Microscopy, TEM) 25 Chapter 4 實驗結果與討論 27 4.1 二硫化鉬和二硫化鎢的成長 27 4.1.1 高分子溶液濃度 27 4.1.2 成長溫度 29 4.1.3 成長壓力和氣體流量 31 4.1.4 硫化氣體種類的影響 33 4.2 三元二硫化鉬鎢合金的成長 36 4.2.1 氣氛控制實驗 36 4.2.2 拉曼光譜分析 42 4.2.3 X射線光電子能譜分析 43 4.2.4 穿透式電子顯微鏡分析結果 44 Chapter 5 結論 45 REFERENCE 46 " | |
| dc.language.iso | zh-TW | |
| dc.subject | 二硫化鉬鎢合金 | zh_TW |
| dc.subject | 二維材料摻雜 | zh_TW |
| dc.subject | 二硫化鉬－二硫化鎢平面異質結構 | zh_TW |
| dc.subject | 高分子輔助沉積法 | zh_TW |
| dc.subject | 過渡金屬二硫族化物 | zh_TW |
| dc.subject | transition metal dichalcogenides | en |
| dc.subject | molybdenum tungsten disulfide | en |
| dc.subject | MoS2-WS2 in-plane heterostructure | en |
| dc.subject | polymer-assisted deposition | en |
| dc.subject | 2D materials doping | en |
| dc.title | 以聚乙烯醇輔助化學氣相沉積法合成二硫化鉬鎢合金 | zh_TW |
| dc.title | Synthesis of MoxW1-xS2 by PVA-assisted Chemical vapor deposition | en |
| dc.date.schoolyear | 110-1 | |
| dc.description.degree | 碩士 | |
| dc.contributor.coadvisor | 林麗瓊(Li-Chyong Chen),陳貴賢(Kuei-Hsien Chen) | |
| dc.contributor.oralexamcommittee | #VALUE! | |
| dc.subject.keyword | 過渡金屬二硫族化物,高分子輔助沉積法,二硫化鉬－二硫化鎢平面異質結構,二維材料摻雜,二硫化鉬鎢合金, | zh_TW |
| dc.subject.keyword | transition metal dichalcogenides,2D materials doping,molybdenum tungsten disulfide,MoS2-WS2 in-plane heterostructure,polymer-assisted deposition, | en |
| dc.relation.page | 48 | |
| dc.identifier.doi | 10.6342/NTU202200382 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2022-02-11 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
| 顯示於系所單位： | 材料科學與工程學系 | |
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| U0001-0802202214493500.pdf 未授權公開取用 | 23.15 MB | Adobe PDF |
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