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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/79871完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 陳敏璋(Miin-Jang Chen) | |
| dc.contributor.author | JU-YU HOO | en |
| dc.contributor.author | 胡祖禹 | zh_TW |
| dc.date.accessioned | 2022-11-23T09:14:42Z | - |
| dc.date.available | 2022-03-07 | |
| dc.date.available | 2022-11-23T09:14:42Z | - |
| dc.date.copyright | 2022-03-07 | |
| dc.date.issued | 2022 | |
| dc.date.submitted | 2022-02-14 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/79871 | - |
| dc.description.abstract | "在本論文的第一部分，我們製作並研究了上閘極二硫化鎢(WS2)電晶體。採用低溫NanoFog ALD作為成核層及傳統加熱式原子層沉積(Atomic Layer Deposition, ALD)作為主層制備閘極介電層。汲極電流對閘極電壓(Id-Vg)的特性曲線顯示二硫化鎢電晶體的開關比高達106，次臨界擺幅低至83 mV/dec，且閘極漏電流為雜訊等級。 論文的第二部分利用原子層播種(Atomic Layer Seeding, ALS)技術研究了氧化鋯(ZrO2)在高定向熱解石墨(highly oriented pyrolytic graphite, HOPG)上的成核行為，並調查了溫度和前驅體/反應物劑量對反應的影響。在良好的製程條件下，可實現表面粗糙度(Ra)低至0.331nm的均勻覆蓋。進一步的拉曼光譜分析表明，ALS技術並沒有對HOPG基板造成結構損傷。 在本論文的最後一部分，通過20次ALD循環的低功率遠程電漿增強原子層播種(remote plasma atomic layer seeding, RPALS)技術，可以在HOPG上均勻覆蓋氮化矽(SiNx)薄膜。20次ALD循環的RPALS 氮化矽加上40次循環的ALD 氧化鉿(HfO2)的總等效氧化層厚度(equivalent oxide thickness, EOT)為2.21nm。" | zh_TW |
| dc.description.provenance | Made available in DSpace on 2022-11-23T09:14:42Z (GMT). No. of bitstreams: 1 U0001-2701202215000300.pdf: 5386103 bytes, checksum: d2347099b345d5b52ba0f9d3a16df2fd (MD5) Previous issue date: 2022 | en |
| dc.description.tableofcontents | 摘要 i ABSTRACT ii CONTENTS iii LIST OF FIGURES vi LIST OF TABLES ix Chapter 1 Introduction 1 1.1 Advantages of 2D materials 1 1.2 Overview of ALD on 2D Materials 4 1.3 Overview of Carbon Nanotubes (CNT) 10 1.4 Atomic Layer Deposition 18 1.5 Atomic Force Microscopy (AFM) 24 1.6 Raman Spectroscopy 25 1.7 X-ray Photoelectron Spectroscopy (XPS) 25 1.8 Motivation 27 Chapter 2 Top-Gated WS2 Transistor with Sub-10nm High-K Gate Stack 31 2.1 Experimental Section 31 2.1.1 Mechanical exfoliation 31 2.1.2 NanoFog ALD (NF-ALD) 33 2.1.3 Photolithography 35 2.1.4 Thermal Evaporation 35 2.1.5 Reactive Ion Etching (RIE) 36 2.1.6 Sputtering 36 2.1.7 Fabrication of top-gated WS2-FET 37 2.2 Results and Discussion 39 2.2.1 Nucleation Engineering of Al2O3 on WS2 39 2.2.2 Top-Gated WS2-FETs 42 2.2.3 XPS Examination 44 Chapter 3 Nucleation Engineering for Atomic Layer Deposition of Uniform Zirconium Oxide on HOPG 46 3.1 Experimental Section 46 3.1.1 Atomic Force Microscope (AFM) 46 3.1.2 Atomic Layer Seeding (ALS) 47 3.2 Results and Discussion 49 3.2.1 NanoFog ALD (NF-ALD) 49 3.2.2 Atomic Layer Seeding (ALS) 51 3.2.2.1 Effect of Temperature 51 3.2.2.2 Effect of Dose 53 3.2.3 X-ray Photoelectron Spectroscopy (XPS) 55 3.2.4 Raman Spectroscopy 56 Chapter 4 Uniform Silicon Nitride Deposition on Highly Oriented Pyrolytic Graphite by Remote Plasma Atomic Layer Seeding 58 4.1 Experimental section 58 4.1.1 Remote Plasma Atomic Layer Seeding 58 4.1.2 MIM capacitor fabrication 60 4.2 Results and discussion 61 4.2.1 Effect of Plasma Power and Cycle Number 61 4.2.2 Raman Spectroscopy 63 4.2.3 Electrical Characteristic of MIM Capacitor 64 4.2.4 H2 Plasma Assisted Remote Plasma Atomic Layer Seeding 67 Chapter 5 Conclusions 69 REFERENCE 70 | |
| dc.language.iso | en | |
| dc.subject | 高定向熱解石墨 | zh_TW |
| dc.subject | 原子層沉積 | zh_TW |
| dc.subject | 二維材料 | zh_TW |
| dc.subject | 高介電係數閘極介電層 | zh_TW |
| dc.subject | 場效電晶體 | zh_TW |
| dc.subject | 過渡金屬二硫化物 | zh_TW |
| dc.subject | two dimensional materials | en |
| dc.subject | highly oriented pyrolytic graphite | en |
| dc.subject | transition metal dichalcogenides | en |
| dc.subject | field-effect transistors | en |
| dc.subject | Atomic layer deposition | en |
| dc.subject | high-K gate dielectrics | en |
| dc.title | 利用原子層沉積技術成長高介電常數介電層於二硫化鎢及高定向熱解石墨之成核工程 | zh_TW |
| dc.title | Nucleation Engineering for Atomic Layer Deposition of High-K Gate Dielectric on WS2 and HOPG | en |
| dc.date.schoolyear | 110-1 | |
| dc.description.degree | 碩士 | |
| dc.contributor.author-orcid | 0000-0001-8784-9274 | |
| dc.contributor.oralexamcommittee | 蔡豐羽(Hsin-Tsai Liu),陳良益(Yung-Ling Chi),吳肇欣 | |
| dc.subject.keyword | 原子層沉積,二維材料,高介電係數閘極介電層,場效電晶體,過渡金屬二硫化物,高定向熱解石墨, | zh_TW |
| dc.subject.keyword | Atomic layer deposition,two dimensional materials,high-K gate dielectrics,field-effect transistors,transition metal dichalcogenides,highly oriented pyrolytic graphite, | en |
| dc.relation.page | 77 | |
| dc.identifier.doi | 10.6342/NTU202200232 | |
| dc.rights.note | 同意授權(全球公開) | |
| dc.date.accepted | 2022-02-14 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
| 顯示於系所單位： | 材料科學與工程學系 | |
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