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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 吳育任(Yuh-Renn Wu) | |
| dc.contributor.author | Pin-Fang Chen | en |
| dc.contributor.author | 陳品方 | zh_TW |
| dc.date.accessioned | 2022-11-23T09:09:03Z | - |
| dc.date.available | 2021-09-02 | |
| dc.date.available | 2022-11-23T09:09:03Z | - |
| dc.date.copyright | 2021-09-02 | |
| dc.date.issued | 2021 | |
| dc.date.submitted | 2021-08-24 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/79729 | - |
| dc.description.abstract | 本研究以蒙地卡羅法討論二硫化鉬以及二硫化鎢的傳輸特性，經模擬後得知二硫 化鉬及二硫化鎢的電子遷移率分別為171 cm2/V-s 及83 cm2/V-s。此外，能帶中，K 能谷以及Q 能谷間的能量差是影響材料傳輸特性的重要因素。但若將二維材料周圍以高介電係數材料包覆，遠程聲子散射將會成為最重要降低材料速度的因子。我們將討論完的材料特性帶入二維奈米片電晶體討論元件特性。材料、閘極長度、電極交疊區域、介電層以及電子摻雜將被討論。我們發現相較於二硫化鎢，二硫化鉬會是較好的通道材料。至於介電層，因三氧化二鋁較二氧化鉿有較低的遠程聲子散射，會是較好的介電層材料。電極交疊區域縮短以及摻雜能給電流帶來正面的效應。至於閘極長度的選擇，則要在縮短閘極的好處以及閘極控制力下降間來選擇。在眾多的參數間進行優化後，我們設計出一電晶體，其閘極長度七奈米，電極交疊區域一奈米，介電層為等效氧化層厚度0.8 奈米之氧化鋁以及電子摻雜為4×1013 cm-2。此電晶體在操作電壓0.65伏以及截止電流為1×10-4 μA/μm 下，開路電流可達495 μA/μm，符合國際半導體技術發展藍圖於2022 年對電流之要求。此外，其亦展現出良好的閘極控制能力。 | zh_TW |
| dc.description.provenance | Made available in DSpace on 2022-11-23T09:09:03Z (GMT). No. of bitstreams: 1 U0001-2008202116153100.pdf: 4992060 bytes, checksum: 067c2478d2ef928789583c5fcfacd7fa (MD5) Previous issue date: 2021 | en |
| dc.description.tableofcontents | "Verification Letter i Acknowledgement ii Chinese Abstract iii English Abstract iv List of Figures ix List of Tables xvi 1 Introduction 1 1.1 Overview of Two-dimensional Materials . . . . . . . . . . . . . . 1 1.2 Introduction and Applications of TMD Materials . . . . . . . . . 2 1.3 Simulation of the Transport Properties . . . . . . . . . . . . . . . 6 1.4 MoS2 and WS2 FET . . . . . . . . . . . . . . . . . . . . . . . . 9 1.5 Gate-All-Around Nanosheet Transistor . . . . . . . . . . . . . . . 10 1.6 International Roadmap for Devices and Systems . . . . . . . . . . 12 2 Methodology 15 2.1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2.2 Scattering Mechanism and Scattering Rate . . . . . . . . . . . . . 15 2.2.1 Acoustic Phonon Scattering . . . . . . . . . . . . . . . . 17 2.2.2 Optical Phonon: Deformation Potential Scattering . . . . 18 2.2.3 Intervalley Phonon Scattering . . . . . . . . . . . . . . . 19 2.2.4 Remote Phonon Scattering . . . . . . . . . . . . . . . . . 20 2.3 Multi-valley Monte Carlo Method . . . . . . . . . . . . . . . . . 22 2.3.1 Monte Carlo Method . . . . . . . . . . . . . . . . . . . . 22 2.3.2 Multi-valley and non-parabolic band conditions . . . . . . 25 2.3.3 Transient Transport Calculation . . . . . . . . . . . . . . 26 2.4 Monte Carlo, Poisson and Drift-Diffusion Model . . . . . . . . . 27 2.4.1 Poisson and Drift-Diffusion Model . . . . . . . . . . . . 27 2.4.2 Monte Carlo, Poisson and Drift-Diffusion Model . . . . . 28 2.4.3 Two Dimensional Poisson, Drift-Diffusion, and Schrodinger Solver . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 3 Transport Properties of MoS2 and WS2 31 3.1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 3.2 Band structure . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 3.2.1 Band structure by DFT . . . . . . . . . . . . . . . . . . . 32 3.2.2 Band structure fitting . . . . . . . . . . . . . . . . . . . . 33 3.3 Intrinsic Electrical Transport Properties . . . . . . . . . . . . . . 34 3.4 Extrinsic Transport Properties . . . . . . . . . . . . . . . . . . . 39 3.4.1 Remote Phonone Scattering . . . . . . . . . . . . . . . . 40 4 MoS2 and WS2 Based Transistor 44 4.1 Structures and Simulation Model of 2D Nanosheet Transistors . . 44 4.2 Comparision of Symmetrical and Asymmetrical Gate . . . . . . . 48 4.3 Effect of Dielectric . . . . . . . . . . . . . . . . . . . . . . . . . 53 4.4 Effect of Lun . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 4.5 Effect of Doping . . . . . . . . . . . . . . . . . . . . . . . . . . 57 4.6 Benchmark . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 5 Conclusion and Future Work 63 Reference 67 Appendices 85 A Deformation potential constants for MoS2 and WS2 86" | |
| dc.language.iso | en | |
| dc.subject | 二維材料 | zh_TW |
| dc.subject | 二硫化鉬 | zh_TW |
| dc.subject | 二硫化鎢 | zh_TW |
| dc.subject | 蒙地卡羅法 | zh_TW |
| dc.subject | 二維材料奈米片電晶體 | zh_TW |
| dc.subject | 2D nanosheet transistor | en |
| dc.subject | MoS2 | en |
| dc.subject | WS2 | en |
| dc.subject | Monte Carlo Method | en |
| dc.subject | 2D material | en |
| dc.title | 二硫化鉬及二硫化鎢傳輸特性及其電晶體之研究 | zh_TW |
| dc.title | Studies of Materials and Transport Properties of MoS2 and WS2 Based Transistors | en |
| dc.date.schoolyear | 109-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 吳肇欣(Hsin-Tsai Liu),張子璿(Chih-Yang Tseng),陳建宏 | |
| dc.subject.keyword | 二維材料,二硫化鉬,二硫化鎢,蒙地卡羅法,二維材料奈米片電晶體, | zh_TW |
| dc.subject.keyword | 2D material,MoS2,WS2,Monte Carlo Method,2D nanosheet transistor, | en |
| dc.relation.page | 88 | |
| dc.identifier.doi | 10.6342/NTU202102554 | |
| dc.rights.note | 同意授權(全球公開) | |
| dc.date.accepted | 2021-08-24 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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