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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 蔡豐羽(Feng-Yu Tsai) | |
| dc.contributor.author | Yi-Yang Wei | en |
| dc.contributor.author | 衛怡揚 | zh_TW |
| dc.date.accessioned | 2021-06-17T08:07:59Z | - |
| dc.date.available | 2019-08-20 | |
| dc.date.copyright | 2019-08-20 | |
| dc.date.issued | 2019 | |
| dc.date.submitted | 2019-08-18 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/73682 | - |
| dc.description.abstract | 本研究首次以五氯化銻作為氧化劑，藉由分子層沉積技術進行3,4-乙烯基二氧噻吩之氣相聚合以生長聚(3,4-乙烯基二氧噻吩)薄膜，並探討其製程及後處理對薄膜特性之影響。五氯化銻因具有高揮發性，相較其他低揮發性氧化劑更適合應用在低溫沉積技術中。研究結果顯示，在150℃和90℃溫度下分子層沉積之聚(3,4-乙烯基二氧噻吩)膜可分別獲得424和243S / cm的高導電率。我們探討沉積溫度和五氯化銻劑量對薄膜性質的影響，發現：（1）相比於90℃，在150℃沉積時五氯化銻的物理吸附量較低，使其對聚(3,4-乙烯基二氧噻吩)過氧化影響較小，同時單體的遷移率上升，因此薄膜的結晶度更高，並擁有更佳的導電率; （2）對於在150℃下大於 20毫托和在90℃下大於13毫托的五氯化銻劑量下，由於過量的五氯化銻物理吸附導致高分子鏈過度氧化並干擾其結晶，致使導電率降低。另外數種後處理，包含去離子水清洗、熱處理及以多種氣體進行氣相浸潤皆會使高分子的摻雜程度下降，並降低導電率。其可能原因為後處理過程中五氯化銻作為摻雜物被去除所致。 | zh_TW |
| dc.description.abstract | This work investigated the processing, post-processing, and properties of poly(3,4-ethylenedioxythiophene) (PEDOT) thin films fabricated by molecular layer deposition (MLD) through vapor phase polymerization of ethylene dioxythiophene (EDOT) with SbCl5 as an oxidant for the first time, taking advantages of the high volatility of SbCl5 to realize low-temperature deposition. High conductivity of 424 and 243 S/cm was obtained from the MLD PEDOT film deposited at 150 and 90 °C, respectively. Effects of the deposition temperature and SbCl5 dose were as follows: (1) Compared with 90 °C, 150 °C reduced physisorbed SbCl5 while increasing the mobility of the depositing monomers, resulting in higher crystallinity and less over-oxidation by SbCl5 in the PEDOT film, which consequently showed higher conductivity; (2) For SbCl5 doses > 20 mTorr at 150 °C and >13 mTorr at 90 °C, the PEDOT film exhibited reduced conductivity due to excessive physisorbed SbCl5 causing over-oxidation and interfering with the crystallization of PEDOT. Post-processing treatments—including thermal annealing under vacuum, rinse with water, and vapor phase infiltration (VPI) with several precursors—to the PEDOT films decreased the conductivity, likely due to their removal of the residual SbCl5 serving as dopants. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-17T08:07:59Z (GMT). No. of bitstreams: 1 ntu-108-R06527020-1.pdf: 4985865 bytes, checksum: 2aea17aa7e4035048cf459ef639b7438 (MD5) Previous issue date: 2019 | en |
| dc.description.tableofcontents | 口試委員會審定書 i
誌謝 ii 摘要 iii Abstract iv List of Figures ix List of Tables xiii Chapter 1 Introduction 1 1.1 Overview of conductive polymer 1 1.2 Introduction and advantages of PEDOT 4 1.3 Development of PEDOT polymerization process 6 1.3.1 Solution process 7 1.3.2 Vapor phase process 10 1.4 Vapor-based layer by layer deposition of polymer films 16 1.4.1 Introduction of atomic layer deposition (ALD) 16 1.4.2 Molecular layer deposition (MLD) of polymer films 19 1.4.3 Vapor phase infiltration (VPI) for post treatment of polymerization 22 1.5 Current progresses 24 1.5.1 PEDOT synthesized with MLD process 24 1.5.2 Doping of Conductive polymer by VPI post treatment 25 1.6 Motivation and objectives statements 27 Chapter 2 Experimental method 29 2.1 Equipment and experiment details 29 2.1.1 MLD deposition system 29 2.1.2 Fabrication of MLD PEDOT thin film 29 2.1.3 DI water and acid rinse for post treatment 31 2.1.4 VPI process 31 2.2 Thin film characteristic analysis 32 2.2.1 Measurements of electrical conductivity 32 2.2.2 Measurement of thickness (Alpha-step) 33 2.2.3 Fourier transform infrared spectroscopy (FTIR) 33 2.2.4 Raman spectroscopy 33 2.2.5 Grazing incidence X-ray diffraction (GIXRD) 34 2.2.6 X-ray photoelectron spectroscopy (XPS) 34 2.2.7 UV-Visible spectrum 35 Chapter 3 Results and discussion 36 3.1 Growth Characteristic of MLD PEDOT 36 3.2 Effect of growth condition on the conductivity of PEDOT 39 3.2.1 Dose of SbCl5 vapor 39 3.2.2 Deposition temperature 40 3.2.3 Thickness dependence of the conductivity of PEDOT films 42 3.3 Other properties analysis 43 3.3.1 Chemical structure analysis 43 3.3.2 Crystalline structure 48 3.3.3 Elemental analysis 53 3.3.4 Optical property 56 3.4 Influence of post treatment on the properties of MLD PEDOT films 59 3.4.1 Effect of DI water rinse 59 3.4.2 Effect of VPI process 63 Chapter 4 Conclusion 67 References 69 Appendix 81 | |
| dc.language.iso | en | |
| dc.subject | 五氯化銻 | zh_TW |
| dc.subject | 氣相聚合 | zh_TW |
| dc.subject | 分子層沉積技術 | zh_TW |
| dc.subject | 原子層沉積技術 | zh_TW |
| dc.subject | 4-乙烯基二氧?吩 | zh_TW |
| dc.subject | 導電高分子 | zh_TW |
| dc.subject | antimony pentachloride (SbCl5) | en |
| dc.subject | poly(3 | en |
| dc.subject | 4-ethylenedioxythiophene) (PEDOT) | en |
| dc.subject | atomic layer deposition (ALD) | en |
| dc.subject | molecular layer deposition (MLD) | en |
| dc.subject | vapor phase polymerization | en |
| dc.subject | conductive polymers | en |
| dc.title | "以五氯化銻為氧化劑進行聚(3,4-乙烯基二氧噻吩)分子層沉積研究" | zh_TW |
| dc.title | Molecular layer deposition of poly(3,4-ethylenedioxythiophene) with SbCl5 as an oxidant | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 107-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 林唯芳(Wei-Fang Su),童世煌(Shih-Huang Tung) | |
| dc.subject.keyword | 導電高分子,3,4-乙烯基二氧?吩,原子層沉積技術,分子層沉積技術,氣相聚合,五氯化銻, | zh_TW |
| dc.subject.keyword | conductive polymers,poly(3,4-ethylenedioxythiophene) (PEDOT),atomic layer deposition (ALD),molecular layer deposition (MLD),vapor phase polymerization,antimony pentachloride (SbCl5), | en |
| dc.relation.page | 86 | |
| dc.identifier.doi | 10.6342/NTU201903941 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2019-08-18 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
| 顯示於系所單位： | 材料科學與工程學系 | |
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