請用此 Handle URI 來引用此文件：
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/70617完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 陳敏璋 | |
| dc.contributor.author | Tsung-Han Shen | en |
| dc.contributor.author | 沈宗翰 | zh_TW |
| dc.date.accessioned | 2021-06-17T04:32:43Z | - |
| dc.date.available | 2023-08-14 | |
| dc.date.copyright | 2018-08-14 | |
| dc.date.issued | 2018 | |
| dc.date.submitted | 2018-08-10 | |
| dc.identifier.citation | 參考文獻
1. Markku, L.; Mikko, R., Atomic Layer Deposition Chemistry: Recent Developments and Future Challenges. Angewandte Chemie International Edition 2003, 42 (45), 5548-5554. 2. Sneh, O.; Clark-Phelps, R. B.; Londergan, A. R.; Winkler, J.; Seidel, T. E., Thin film atomic layer deposition equipment for semiconductor processing. Thin Solid Films 2002, 402 (1), 248-261. 3. Ritala, M.; Leskelä, M., Chapter 2 - Atomic layer deposition. In Handbook of Thin Films, Singh Nalwa, H., Ed. Academic Press: Burlington, 2002; pp 103-159. 4. Cho, G. Y.; Noh, S.; Lee, Y. H.; Ji, S.; Cha, S. W., Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition. ECS Transactions 2014, 64 (9), 15-21. 5. Knoops, H. C. M.; Potts, S. E.; Bol, A. A.; Kessels, W. M. M., 27 - Atomic Layer Deposition A2 - Kuech, Thomas F. In Handbook of Crystal Growth (Second Edition), North-Holland: Boston, 2015; pp 1101-1134. 6. Puurunen, R. L., Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process. Journal of Applied Physics 2005, 97 (12), 121301. 7. Park, K. J.; Terry, D. B.; Stewart, S. M.; Parsons, G. N., In Situ Auger Electron Spectroscopy Study of Atomic Layer Deposition: Growth Initiation and Interface Formation Reactions during Ruthenium ALD on Si−H, SiO2, and HfO2 Surfaces. Langmuir 2007, 23 (11), 6106-6112. 8. Matero, R.; Rahtu, A.; Ritala, M.; Leskelä, M.; Sajavaara, T., Effect of water dose on the atomic layer deposition rate of oxide thin films. Thin Solid Films 2000, 368 (1), 1-7. 9. Profijt, H. B.; Potts, S. E.; Sanden, M. C. M. v. d.; Kessels, W. M. M., Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges. Journal of Vacuum Science & Technology A 2011, 29 (5), 050801. 10. Setter, N.; Damjanovic, D.; Eng, L.; Fox, G.; Gevorgian, S.; Hong, S.; Kingon, A.; Kohlstedt, H.; Park, N. Y.; Stephenson, G. B.; Stolitchnov, I.; Taganstev, A. K.; Taylor, D. V.; Yamada, T.; Streiffer, S., Ferroelectric thin films: Review of materials, properties, and applications. Journal of Applied Physics 2006, 100 (5), 051606. 11. Catalan, G.; Jiménez, D.; Gruverman, A., Negative capacitance detected. Nature Materials 2015, 14, 137. 12. Nelson, C. T.; Gao, P.; Jokisaari, J. R.; Heikes, C.; Adamo, C.; Melville, A.; Baek, S.-H.; Folkman, C. M.; Winchester, B.; Gu, Y.; Liu, Y.; Zhang, K.; Wang, E.; Li, J.; Chen, L.-Q.; Eom, C.-B.; Schlom, D. G.; Pan, X., Domain Dynamics During Ferroelectric Switching. Science 2011, 334 (6058), 968-971. 13. Gao, W.; Khan, A.; Marti, X.; Nelson, C.; Serrao, C.; Ravichandran, J.; Ramesh, R.; Salahuddin, S., Room-Temperature Negative Capacitance in a Ferroelectric–Dielectric Superlattice Heterostructure. Nano Letters 2014, 14 (10), 5814-5819. 14. Khan, A. I.; Chatterjee, K.; Wang, B.; Drapcho, S.; You, L.; Serrao, C.; Bakaul, S. R.; Ramesh, R.; Salahuddin, S., Negative capacitance in a ferroelectric capacitor. Nature Materials 2014, 14, 182. 15. Triyoso, D. H.; Ramon, M.; Hegde, R. I.; Roan, D.; Garcia, R.; Baker, J.; Wang, X.-D.; Fejes, P.; White, B. E.; Tobina, P. J., Physical and Electrical Characteristics of HfO2 Gate Dielectrics Deposited by ALD and MOCVD. Journal of The Electrochemical Society 2005, 152 (3), G203-G209. 16. van der Straten, O.; Zhang, X.; Penny, C.; Maniscalco, J.; Chiang, S.; Ren, J.; Ma, P., Impact of Direct Plasma Densification on Resistivity and Conformality of PEALD Tantalum Nitride. ECS Transactions 2013, 50 (13), 159-164. 17. Rossnagel, S. M.; Cuomo, J. J., Film modification by low energy ion bombardment during deposition. Thin Solid Films 1989, 171 (1), 143-156. 18. Takagi, T., Ion–surface interactions during thin film deposition. Journal of Vacuum Science & Technology A 1984, 2 (2), 382-388. 19. Fang, Q.; Hodson, C.; Xu, C.; Gunn, R., Nucleation and Growth of Platinum Films on High-k/Metal Gate Materials by Remote Plasma and Thermal ALD. Physics Procedia 2012, 32, 551-560. 20. Onishi, K.; Chang Seok, K.; Rino, C.; Hag-Ju, C.; Gopalan, S.; Nieh, R. E.; Krishnan, S. A.; Lee, J. C., Improvement of surface carrier mobility of HfO2 MOSFETs by high-temperature forming gas annealing. IEEE Transactions on Electron Devices 2003, 50 (2), 384-390. 21. An, J.; Usui, T.; Logar, M.; Park, J.; Thian, D.; Kim, S.; Kim, K.; Prinz, F. B., Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films. ACS Applied Materials & Interfaces 2014, 6 (13), 10656-10660. 22. Li, K. S.; Chen, P. G.; Lai, T. Y.; Lin, C. H.; Cheng, C. C.; Chen, C. C.; Wei, Y. J.; Hou, Y. F.; Liao, M. H.; Lee, M. H.; Chen, M. C.; Sheih, J. M.; Yeh, W. K.; Yang, F. L.; Salahuddin, S.; Hu, C. In Sub-60mV-swing negative-capacitance FinFET without hysteresis, 2015 IEEE International Electron Devices Meeting (IEDM), 7-9 Dec. 2015; 2015; pp 22.6.1-22.6.4. 23. Khan, A. I.; Chatterjee, K.; Duarte, J. P.; Lu, Z.; Sachid, A.; Khandelwal, S.; Ramesh, R.; Hu, C.; Salahuddin, S., Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor. IEEE Electron Device Letters 2016, 37 (1), 111-114. 24. Salvatore, G. A.; Rusu, A.; Ionescu, A. M., Experimental confirmation of temperature dependent negative capacitance in ferroelectric field effect transistor. Applied Physics Letters 2012, 100 (16), 163504. 25. Lin, C. I.; Khan, A. I.; Salahuddin, S.; Hu, C., Effects of the Variation of Ferroelectric Properties on Negative Capacitance FET Characteristics. IEEE Transactions on Electron Devices 2016, 63 (5), 2197-2199. 26. Lee, M. H.; Fan, S. T.; Tang, C. H.; Chen, P. G.; Chou, Y. C.; Chen, H. H.; Kuo, J. Y.; Xie, M. J.; Liu, S. N.; Liao, M. H.; Jong, C. A.; Li, K. S.; Chen, M. C.; Liu, C. W. In Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs, 2016 IEEE International Electron Devices Meeting (IEDM), 3-7 Dec. 2016; 2016; pp 12.1.1-12.1.4. 27. Jo, J.; Shin, C., Negative Capacitance Field Effect Transistor With Hysteresis-Free Sub-60-mV/Decade Switching. IEEE Electron Device Letters 2016, 37 (3), 245-248. 28. Zhirnov, V. V.; Cavin, R. K., Negative capacitance to the rescue? Nature Nanotechnology 2008, 3, 77. 29. Salahuddin, S.; Datta, S., Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices. Nano Letters 2008, 8 (2), 405-410. 30. Appleby, D. J. R.; Ponon, N. K.; Kwa, K. S. K.; Zou, B.; Petrov, P. K.; Wang, T.; Alford, N. M.; O’Neill, A., Experimental Observation of Negative Capacitance in Ferroelectrics at Room Temperature. Nano Letters 2014, 14 (7), 3864-3868. 31. Khan, A. I.; Bhowmik, D.; Yu, P.; Kim, S. J.; Pan, X.; Ramesh, R.; Salahuddin, S., Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures. Applied Physics Letters 2011, 99 (11), 113501. 32. Müller, J.; Yurchuk, E.; Schlösser, T.; Paul, J.; Hoffmann, R.; Müller, S.; Martin, D.; Slesazeck, S.; Polakowski, P.; Sundqvist, J.; Czernohorsky, M.; Seidel, K.; Kücher, P.; Boschke, R.; Trentzsch, M.; Gebauer, K.; Schröder, U.; Mikolajick, T. In Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG, 2012 Symposium on VLSI Technology (VLSIT), 12-14 June 2012; 2012; pp 25-26. 33. Tomida, K.; Kita, K.; Toriumi, A., Dielectric constant enhancement due to Si incorporation into HfO2. Applied Physics Letters 2006, 89 (14), 142902. 34. Böscke, T. S.; Müller, J.; Bräuhaus, D.; Schröder, U.; Böttger, U., Ferroelectricity in hafnium oxide thin films. Applied Physics Letters 2011, 99 (10), 102903. 35. Müller, J.; Böscke, T. S.; Bräuhaus, D.; Schröder, U.; Böttger, U.; Sundqvist, J.; Kücher, P.; Mikolajick, T.; Frey, L., Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications. Applied Physics Letters 2011, 99 (11), 112901. 36. Park, M. H.; Kim, H. J.; Kim, Y. J.; Lee, W.; Kim, H. K.; Hwang, C. S., Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes. Applied Physics Letters 2013, 102 (11), 112914. 37. Park, M. H.; Kim, H. J.; Kim, Y. J.; Moon, T.; Hwang, C. S., The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity. Applied Physics Letters 2014, 104 (7), 072901. 38. Park, M. H.; Kim, H. J.; Kim, Y. J.; Lee, W.; Moon, T.; Kim, K. D.; Hwang, C. S., Study on the degradation mechanism of the ferroelectric properties of thin Hf0.5Zr0.5O2 films on TiN and Ir electrodes. Applied Physics Letters 2014, 105 (7), 072902. 39. Lin, B.-T.; Lu, Y.-W.; Shieh, J.; Chen, M.-J., Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing. Journal of the European Ceramic Society 2017, 37 (3), 1135-1139. 40. Park, M. H.; Kim, H. J.; Kim, Y. J.; Lee, W.; Moon, T.; Hwang, C. S., Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature. Applied Physics Letters 2013, 102 (24), 242905. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/70617 | - |
| dc.description.abstract | 本論文主要分為兩個部分，第一部分在介紹電漿處理對薄膜的影響。在原子層沉積(Atomic layer deposition)製程中加入電漿處理後，發現薄膜厚度有被抑制的效果。而經電漿處理後的薄膜，其金氧半電容元件比一般ALD製程，也有較佳的電性表現。第二部分為鐵電負電容效應的研究。我們使用電漿增強型原子層沉積技術製作氧化薄膜，可以得到具有鐵電性的材料。而氧化物薄膜會因為其厚度增加而有較低的殘留極化值，可能由於內部有非鐵電相的存在。以此鐵電材料堆疊於順電材料上時，可發現電容放大的效應。 | zh_TW |
| dc.description.abstract | This paper is divided into two parts. The first part investigates the effect of plasma treatment on the film prepared by the atomic layer deposition (ALD). When the plasma treatment was introduced to the ALD process, it was found that the film thickness was suppressed. The plasma-treated metal-oxide-semiconductor capacitors also reveal better electrical performance than that treated by the conventional ALD process. The second part is the study of the negative capacitance effect of ferroelectric thin films. Plasma-enhanced atomic layer deposition was used to prepare ferroelectric thin films. The residual polarization of the ferroelectric oxide thin film decreases with the increasing film thickness, attributed to the presence of a non-ferroelectric phase. The effect of capacitance enhancement can be observed when the ferroelectric thin film is stacked on a paraelectric layer. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-17T04:32:43Z (GMT). No. of bitstreams: 1 ntu-107-R05527046-1.pdf: 3345562 bytes, checksum: 8eb296835c2cae3ea5ad574abba55ab3 (MD5) Previous issue date: 2018 | en |
| dc.description.tableofcontents | 致謝 I
摘要 II Abstract III 目錄 IV 圖目錄 VI 表目錄 VIII 第一章 簡介 1 1.1 原子層沉積技術(ALD) 1 1.1.1 原子層沉積技術 1 1.1.2 電漿增強原子層沉積技術 6 1.2 鐵電材料 10 1.3 論文導覽 13 第二章 電漿處理對薄膜之影響 14 2.1 研究動機 14 2.2 研究簡介 14 2.3 實驗步驟 16 2.4 實驗結果與討論 21 2.4.1 薄膜厚度分析 21 2.4.2 薄膜MOS結構電性分析 27 2.5 結論 31 第三章 鐵電負電容元件之研究 32 3.1 研究動機 32 3.2 研究簡介 32 3.3 實驗步驟 37 3.4 實驗結果與討論 41 3.4.1 順電層材料串聯電容表現 41 3.4.2 氧化物薄膜之鐵電性質量測 43 3.4.3 氧化物薄膜之晶相分析 47 3.4.4 鐵電材料串聯順電材料之電容表現 51 3.4.5 負電容理論模型 55 3.5 結論 60 第四章 總結 61 4.1 參考文獻 62 | |
| dc.language.iso | zh-TW | |
| dc.subject | 原子層沉積技術 | zh_TW |
| dc.subject | 金氧半電容元件 | zh_TW |
| dc.subject | 負電容 | zh_TW |
| dc.subject | 電漿處理 | zh_TW |
| dc.subject | 鐵電材料 | zh_TW |
| dc.subject | 順電材料 | zh_TW |
| dc.subject | plasma treatment | en |
| dc.subject | Atomic layer deposition | en |
| dc.subject | paraelectric material | en |
| dc.subject | ferroelectric material | en |
| dc.subject | negative capacitance | en |
| dc.title | 使用電漿增強型原子層沉積技術探討電漿處理及鐵電負電容之研究 | zh_TW |
| dc.title | Investigation of Plasma Treatment and Ferroelectric Negative Capacitance using Plasma Enhanced Atomic Layer Deposition | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 106-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 吳肇欣,廖洺漢,李峻霣 | |
| dc.subject.keyword | 原子層沉積技術,金氧半電容元件,電漿處理,順電材料,鐵電材料,負電容, | zh_TW |
| dc.subject.keyword | Atomic layer deposition,plasma treatment,paraelectric material,ferroelectric material,negative capacitance, | en |
| dc.relation.page | 66 | |
| dc.identifier.doi | 10.6342/NTU201802986 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2018-08-10 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
| 顯示於系所單位： | 材料科學與工程學系 | |
文件中的檔案：
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| ntu-107-1.pdf 未授權公開取用 | 3.27 MB | Adobe PDF |
系統中的文件，除了特別指名其著作權條款之外，均受到著作權保護，並且保留所有的權利。