在柔性基板上選擇性雷射燒結矽微奈米顆粒

Abstract

矽基材料在半導體元件的發展史上扮演舉足輕重的地位，同時隨著近年來穿戴式電子元件的蓬勃發展，研究各材料於柔性基板的加工成為重要的課題，因此研究矽基半導體材料於柔性基板上的加工成為本實驗研究的重點。我們透過527 nm 奈秒脈衝雷射的應用，來實現以選擇性雷射燒結技術將矽奈米/微米顆粒燒結於PET柔性基板上，以矽奈米/微米顆粒皆成功燒結出緻密的矽微米線，而圖形化掃描解析度以矽微米顆粒燒結可達約100 μm，而以矽奈米顆粒燒結約130 μm。另外透過雷射二次退火的方式，來改善雷射燒結而造成的表面不平整性，並分別歸納出改善表面輪廓之機制，最後本實驗示範以選擇性雷射燒結技術製作可撓性矽膜溫度感測器，來作為本實驗的研究成果。

Silicon-based materials play a pivotal role in the development history of semiconductor components. In addition, with the vigorous development of wearable electronic divices in recent years, study on the processing of various materials on flexible substrates has become a hot topic. Therefore, study on silicon particles on flexible substrates becomes a focus in this study. Through the application of 527 nm nanosecond pulsed lasers, we achieved the selective laser sintering method to sinter the silicon nano/micron-particles on the PET substrate, and successfully sintered the silicon consecutive micro-line with the silicon nano/micron particles. The resolution of the pattern can reach about 100 μm with silicon micro-particles sintering, and about 130 μm with silicon nano-particles sintering. Moreover, the laser secondary annealing method is used to improve the surface unevenness caused by laser sintering process. Finally, we demonstrate the selective laser sintering method to make flexible silicon film temperature sensor.