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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 陳俊維(Chun-Wei Chen) | |
dc.contributor.author | Meng-Hsiang Hsieh | en |
dc.contributor.author | 謝孟翔 | zh_TW |
dc.date.accessioned | 2021-06-17T00:19:33Z | - |
dc.date.available | 2012-07-02 | |
dc.date.copyright | 2012-07-02 | |
dc.date.issued | 2012 | |
dc.date.submitted | 2012-06-26 | |
dc.identifier.citation | 1. Principles of Electronic Materials and Devices, Second Edition, S.O. Kasap (c McGraw-Hill, 2002)
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/66030 | - |
dc.description.abstract | 本論文主要探討以溶液法製備之紅外光光偵測器在奈米碳管薄膜電極上,相較於常用於傳統光電元件之ITO透明導電玻璃需高真空製程、硬且脆之缺點,導電透光碳管薄膜電極提供一簡單、低成本之溶液製備方法可轉印在不同基板上,並具備可大面積製程、可撓性和較高之紅外光穿透度等優點。我們分析schottky接面與塊材異質接面兩種不同元件結構在碳管薄膜電極之電流-電壓特性。最後我們可以得到一以P3HT/PCBM/PbS混摻方式製備之塊材異質接面紅外光光偵測器在奈米碳管薄膜電極上,其光電轉換效率0.4%在波長1460之紅外光頻譜,因此我們可以製作一全溶液法製備之紅外光光偵測器在奈米碳管電極上,具低成本之製程與可撓性之特點。 | zh_TW |
dc.description.abstract | This thesis aims to a solution processable infrared Photodetector on single-walled carbon nanotube (SWNTs) electrodes. Compare to the conventional indium tin oxide conductive electrodes had disadvantages of expensive high vacuum deposition process, rigid and non-flexible properties, we can deliver a simple and low-cost solution process on fabricating SWNTs thin film electrodes which could transfer to various substrates. Conductive and transparent SWNTs thin film had the advantages of large area processable, flexible and good infrared transmittance. We apply two different device structures on SWNTs electrode: Schottky junction diode and Bulk HeteroJunction diode.Finally we get a great infrared photo response for a P3HT/PCBM/PbS hybrid BHJ infrared Photodetector on SWNTs electrode with 0.4% external quantum efficiency at 1460nm.Therefore we can fabricate a all-solution processable, low cost infrared Photodetector on SWNTs electrodes. | en |
dc.description.provenance | Made available in DSpace on 2021-06-17T00:19:33Z (GMT). No. of bitstreams: 1 ntu-101-R97527064-1.pdf: 6061297 bytes, checksum: 775c8dafb14281c153259ff90824031d (MD5) Previous issue date: 2012 | en |
dc.description.tableofcontents | 中文摘要........................................................................................................................I
英文摘要.......................................................................................................................II 目錄..............................................................................................................................III 圖目錄.........................................................................................................................VII 表目錄..........................................................................................................................XI 第一章 緒論..................................................................................................................1 1.1 前言...................................................................................................................1 1.2 光偵測器(Photodetector)原理..........................................................................2 1.2.1 半導體材料概論..................................................................................2 1.2.2 光子的吸收..........................................................................................3 1.2.3 載子的產生與分離機制......................................................................4 1.2.4 載子的傳輸..........................................................................................5 1.3光偵測器的特性...............................................................................................8 1.4 奈米碳管........................................................................................................11 1.5 研究動機........................................................................................................12 第二章 文獻回顧.......................................................................................................13 2.1 奈米材料光偵測器.......................................................................................13 2.1.1 奈米材料光偵測器介紹...................................................................13 2.1.2奈米材料光偵測器............................................................................13 2.1.3光二極體機制....................................................................................16 2.1.4 光導體機制.......................................................................................17 2.2 導電奈米碳管電極.....................................................................................18 2.2.1導電奈米碳管電極介紹................................................................... 18 2.2.2導電奈米碳管電極應用....................................................................20 第三章 材料製備.......................................................................................................21 3.1 硫化鉛奈米晶體合成...................................................................................21 3.2 PbS奈米晶體分析......................................................................................22 3.2.1 結構分析...........................................................................................22 3.2.2 光學分析...........................................................................................23 3.2.3 表面配位基分析...............................................................................24 3.3 奈米碳管薄膜轉印製程.............................................................................25 3.3.1 實驗步驟...........................................................................................25 3.3.2 SEM影像分析....................................................................................27 3.4 碳管薄膜表面化學處理...............................................................................27 3.5 碳管薄膜光學性質.......................................................................................28 第四章 Schottky接面二極體紅外光光偵測器......................................................30 4.1 Schottky二極體元件原理..........................................................................30 4.2元件設計與結構............................................................................................32 4.2.1 Schottky二極體在ITO電極上之元件設計...................................32 4.2.2 Schottky二極體在SWNTs電極上之元件設計..............................34 4.3元件的表面處理............................................................................................36 4.3.1 1,2-ethanedithiol化學表面處理.......................................................36 4.3.2空氣退火對元件表現的影響............................................................38 4.4 元件製程與觀念...........................................................................................39 4.4.1元件製程............................................................................................39 4.4.2 元件製程觀念...................................................................................42 4.5元件參數最佳化...........................................................................................43 4.5.1多層鍍膜對表面形貌的影響...........................................................43 4.5.2膜厚對元件表現的影響...................................................................44 4.5.3 Ethanedithiol1表面改質對元件性質的影響.............................46 4.5.4 空氣退火對元件之影響..................................................................49 4.5.5 PMMA高分子層對元件之影響............................................................51 4.6 元件表現.......................................................................................................53 4.6.1 硫化鉛schottky二極體在ITO電極上.........................................53 4.6.2 硫化鉛schottky二極體在SWNTs電極上.....................................54 4.7 總結...............................................................................................................57 第五章 高分子/無機奈米晶體混摻紅外光偵測器.................................................58 5.1 有機無機混摻紅外光偵測器.......................................................................58 5.1.1 摘要...................................................................................................58 5.1.2 P3HT/PCBM塊材異質接面高分子光電元件....................................59 5.1.3 高分子/無機奈米晶體光電元件.....................................................60 5.1.4 P3HT/PCBM/PbS有機無機混摻紅外光偵測器................................61 5.2 P3HT/PCBM/PbS在奈米碳管薄膜電極上性質分析...................................62 5.2.1 吸收光譜分析.....................................................................................62 5.2.2 原子力顯微鏡(AFM)表面形貌分析...................................................63 5.3元件製程與參數最佳化...............................................................................65 5.3.1實驗步驟..............................................................................................65 5.3.2元件斷面掃描式電子顯微鏡影像......................................................65 5.3.3不同PbS含量之參數最佳化..............................................................66 5.3.4不同介面層(interlayer)對元件之影響...............................................68 5.4光偵測器特性分析......................................................................................70 5.4.1電流-電壓特性圖................................................................................70 5.4.2光電流-輸入能量線性趨勢................................................................72 5.4.3光電轉換效率.....................................................................................73 5.5總結..............................................................................................................75 參考文獻..................................................................................................................76 | |
dc.language.iso | zh-TW | |
dc.title | 利用水溶液製程製作紅外光光偵測器在透明導電奈米碳管電極上 | zh_TW |
dc.title | Solution Processible Infrared Photodetectors on Single-Walled Carbon Nanotube Electrodes | en |
dc.type | Thesis | |
dc.date.schoolyear | 100-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 吳季珍(Jih-Jen Wu),陳家俊(Chia-Chun Chen) | |
dc.subject.keyword | 水溶液製程,紅外光,光偵測器,奈米碳管,量子點,硫化鉛, | zh_TW |
dc.subject.keyword | Solution Process,Infrared,photodetector,carbon nanotube,quantum dot,PbS, | en |
dc.relation.page | 79 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2012-06-26 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
顯示於系所單位: | 材料科學與工程學系 |
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