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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 藍崇文(Chung-Wen Lan) | |
| dc.contributor.author | Li-Hsing Chou | en |
| dc.contributor.author | 周力行 | zh_TW |
| dc.date.accessioned | 2021-05-17T09:15:00Z | - |
| dc.date.available | 2012-08-16 | |
| dc.date.available | 2021-05-17T09:15:00Z | - |
| dc.date.copyright | 2012-08-16 | |
| dc.date.issued | 2012 | |
| dc.date.submitted | 2012-08-13 | |
| dc.identifier.citation | 1. Chapin, D.M., C.S. Fuller, and G.L. Pearson, A new silicon p-n junction
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Geerligs, Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon. Applied Physics Letters, 2004. 85(18): p. 4061. 29. Cotter, J.E., et al., P-type versus n-type silicon wafers: prospects for high-efficiency commercial silicon solar cells. IEEE Transactions on electron devices, 2006. 53(8): p. 1893-1901. 30. Meier, D.L., et al., Self-doping contacts and associated silicon solar cell structures, in 2nd World Conference and Exhirition on Photovoltaic Solar Energy Conversion1998: Vienna, Austria. 31. Meier, D.L., et al., Aluminum alloy back p-n junction dendritic web silicon solar cell. Solar Energy Materials & Solar Cells, 2001. 65: p. 621-627. 32. Cuevas, A., et al., Back junction solar cells on n-type multicrystalline and cz silicon wafers, in 3rd World Conference on Photovoltaic Energy Conversion 2003: Osaka, Japan. 33. 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Peng, K. and J. Zhu, Morphological selection of electroless metal deposits on silicon in aqueous fluoride solution. Electrochimica Acta, 2004. 49(16): p. 2563-2568. 43. Aberle, A.G., Surface passivation of crystalline silicon solar cells: A Review. Progress in Photovoltaics: Research and Applications, 2000. 8: p. 473-487. 44. Fukata, N., et al., Hydrogen passivation of P donors and defects in P-doped silicon nanowires synthesized by laser ablation. Physica B: Condensed Matter, 2007. 401-402: p. 523-526. 45. Guo, C.-S., et al., Surface Passivation and Transfer Doping of Silicon Nanowires. Angewandte Chemie International Edition, 2009. 48(52): p. 9896-9900. 46. Swain, B.S., B.P. Swain, and N.M. Hwang, Chemical surface passivation of silicon nanowires grown by APCVD. Current Applied Physics, 2010. 10(3): p. S439-S442. 47. Sun, X., et al., Fabrication and characterization of polycrystalline silicon nanowires with silver-assistance by electroless deposition. Applied Surface Science, 2011. 257(9): p. 3861-3866. 48. Kim, D.R., et al., Hybrid Si Microwire and Planar Solar Cells: Passivation and Characterization. Nano Letters, 2011. 11(7): p. 2704-2708. 49. Rohatgi, A., et al., Comprehensive study of rapid, low-cost silicon surface passivation technologies. IEEE Transactions on electron devices, 2000. 47(5): p. 987-993. 50. Li, H., et al., Influence of nanowires length on performance of crystalline silicon solar cell. Applied Physics Letters, 2011. 98(15): p. 151116. 51. Huang, B.-R., et al., A simple and low-cost technique for silicon nanowire arrays based solar cells. Solar Energy Materials and Solar Cells, 2012. 98: p. 357-362. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/6589 | - |
| dc.description.abstract | 在太陽能電池製作過程中，影響效率的主要因素有短路電流(Short-Circuit)損失、
開路電壓(Open-Circuit Voltage)損失及填充因子(Fill Factor)損失。其中主要影響電流的方面來自表面反射、電極遮蔽以及材料本身對於太陽光的吸收能力。抗反射層 (Anti-Reflection Coating)以及表面結構化(Surface Texturing)可以降低表面反射與提高光電流進而提高效率。 其中次微米表面結構化技術相較於傳統的抗反射層具有優越的寬頻譜抗反射能力， 有充分的潛力取代傳統的抗反射鍍膜。N 型結晶矽因其較高的少數載子壽命與金屬雜 質容忍能力，被認為是相當有潛力的太陽能電池材料。 本論文嘗試結合兩者利用銀離子於N 型矽晶片表面進行奈米線陣列的製作，製作 完成的奈米線分別測量其表面狀態與反射率。製備好的奈米線直徑約70 奈米。將製備 好的奈米線陣列晶片製作成太陽能電池利用太陽光模擬器以及光譜響應測量系統測量 其IV 特性曲線與光譜響應並嘗試以快速熱氧化處理進行鈍化效果的比較。且利用不同 蝕刻時間的奈米線電池研究奈米線長度對於效率的影響，最後利用多晶矽製作奈米線 電池而最佳的轉換效率可達10％。 | zh_TW |
| dc.description.abstract | In the process of solar cell fabrication, the factors of efficiency losses are Short-Circuit losses, Open-Circuit Voltage losses and Fill Factor losses. The Short-Circuit losses combined Reflection losses, Shading losses and absorption losses, Anti-Reflection Coating and Surface Texturing which can reduce the reflection losses to improve the efficiency.
Compare with traditional Anti-Reflection Coating, Deep Sub-micron Surface Texturing has potential to replace the former due to its ability of Board-banded low reflectance. N-type crystalline silicon is recently attracted much attention due to higher minority carrier lifetime and toleration of metallic impurity. In this thesis, we fabricate the nanowire array on N-type silicon wafer through assisting of silver ions and analyze its morphology and reflectance. The diameter of nanowire is about 60nm. Finally, we fabricate the nanowire array solar cell and measure its IV character by Solar Simulator and Spectral response by Quantum Efficiency measurement device; we also discuss the effect of rapid thermo process for surface passivation and how different length effect on efficiency. Finally, we use multi-crystalline silicon to fabricate nanowire solar cell and reach the best efficiency to 10％ | en |
| dc.description.provenance | Made available in DSpace on 2021-05-17T09:15:00Z (GMT). No. of bitstreams: 1 ntu-101-R99524078-1.pdf: 41113487 bytes, checksum: fccf0c095f203f157d333d960af151f9 (MD5) Previous issue date: 2012 | en |
| dc.description.tableofcontents | 中文摘要...................................................................................................i
英文摘要...................................................................................................ii 目錄.........................................................................................................iii 圖目錄......................................................................................................v 表目錄.....................................................................................................vii 第一章 緒論...............................................................................................1 1.1太陽能電池...........................................................................................1 1.1.1前言..................................................................................................1 1.1.2太陽光譜...........................................................................................3 1.1.3太陽能電池基本原理...........................................................................4 1.2金屬離子輔助蝕刻法..............................................................................7 1.3P 型與N 型太陽能電池的比較................................................................14 1.4研究動機.............................................................................................17 第二章 實驗方法與實驗器材.......................................................................18 2.1實驗藥品.............................................................................................18 2.2實驗設備..............................................................................................22 2.2.1製程設備...........................................................................................22 2.2.2量測設備...........................................................................................26 2.3實驗流程..............................................................................................29 2.3.1 太陽能電池製作.................................................................................29 2.3.2 奈米線製作.......................................................................................31 2.3.3 奈米線太陽能電池的製作....................................................................32 第三章 研究結果與討論..............................................................................34 3.1金屬離子輔助蝕刻製作奈米線與其特性之探討..........................................34 3.1.1摻雜類型與濃度對於奈米線的影響.......................................................34 3.1.2銀離子濃度對奈米線的影響.................................................................36 3.1.3多晶矽基材對奈米線的影響.................................................................39 3.2太陽能電池..........................................................................................42 3.3奈米線太陽能電池.................................................................................45 3.3.1 單晶矽奈米線太陽能電池....................................................................45 3.3.2 鈍化處理..........................................................................................49 3.3.3 不同蝕刻長度的影響..........................................................................51 3.3.4 多晶矽奈米線太陽能電池....................................................................54 第四章 結論...............................................................................................56 參考文獻...................................................................................................57 | |
| dc.language.iso | zh-TW | |
| dc.title | 金屬離子輔助蝕刻法製備奈米線陣列在N型矽晶太陽能電池之應用 | zh_TW |
| dc.title | Fabrication of Nanowire Array by Metal-Assisted Etching and application on N-type Rear-Emitter Silicon Solar Cell | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 100-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 何國川,洪儒生,劉致為 | |
| dc.subject.keyword | n型矽晶,背鋁射極,金屬輔助蝕刻法,奈米線陣列, | zh_TW |
| dc.subject.keyword | n-type,rear-emitter,metal-assisted etching,nanowire array, | en |
| dc.relation.page | 59 | |
| dc.rights.note | 同意授權(全球公開) | |
| dc.date.accepted | 2012-08-14 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 化學工程學研究所 | zh_TW |
| 顯示於系所單位： | 化學工程學系 | |
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