表面光柵發光二極體製作及特性分析

Abstract

我們利用雷射干涉微影製程，成功製造出了p-型氮化鎵表面具有不同週期表面光柵結構之發光二極體，並量測其發光強度與電特性。經由製程參數的調整，我們可在製作週期不同之一維光柵結構時，將光柵溝槽深度與溝槽寬比例控制在一個範圍內。 經過電特性的量測，我們發現表面具有光柵結構之元件其電阻較表面平坦的參考元件為大，且隨著週期變大有略微上升的趨勢。 發光強度的量測結果則顯示：相較於參考元件，表面具有光柵結構之元件，在發光效率上有大幅的增加，而增強的幅度同樣隨週期變大而上升。由變化角度之發光強度量測結果也得到相同的變化趨勢。

The variations of the output intensity and electrical property of a surface-grating lateral light-emitting diode (LED) with different grating periods on the p-GaN mesa are demonstrated. By fabricating one-dimensional surface gratings of similar duty cycles and groove depths, it is found that the device resistance of a surface grating LED is higher than that of the reference LED of a flat mesa surface. Also the device resistance increases slightly with increasing grating period. The output intensity of a surface grating LED is higher than that of the reference LED. Also, it increases when the grating period is increased. The measurement of angle-dependent output intensity shows the consistent results.