表面光柵發光二極體製作及特性分析

Chih-Chun Lin; 林志鈞

請用此 Handle URI 來引用此文件： http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/65047

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DC 欄位	值	語言
dc.contributor.advisor	楊志忠
dc.contributor.author	Chih-Chun Lin	en
dc.contributor.author	林志鈞	zh_TW
dc.date.accessioned	2021-06-16T23:18:31Z	-
dc.date.available	2015-08-09
dc.date.copyright	2012-08-09
dc.date.issued	2012
dc.date.submitted	2012-08-01
dc.identifier.citation	References [1] S. Nakamura, M. Senoh, and T. Mukai, “P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes,” Jpn. J. Appl. Phys. 32, L8-L11 (1993). [2] Z. L. Li, S. Tripathy, P. T. Lai, and H. W. Choi, “Effect of indium content on performance and reliability of InGaN/GaN light-emitting diodes,“ J. Appl. Phys. 106, 094507 (2009). [3] S. Tanabe, S. Fujita, S. Yoshihara, A. Sakamoto, and S. Yamamoto, “YAG glass-ceramic phosphor for white LED (II): luminescence characteristics,” Proc. SPIE 5941, 594112 (2005). [4] J. Y. Kim, Y. Tak, J. W. Lee, H. G. Hong, S. Chae, H. Choi, B. Min, Y. Park, M. Kim, S. Lee, N. Cha, Y. Shin, J. R. Kim, and J. I. Shim, 'Highly efficient InGaN/GaN blue LED grown on Si (111) substrate,' CLEO: S and I (2011). [5] H. Y. Lee, X. Y. Huang, and C. T. Lee, “Light Output Enhancement of GaN-Based Roughened LEDs Using Bias-Assisted Photoelectrochemical Etching Method,” J. Electrochem. Soc. 155, H707 (2008). [6] Y. K. Ee, R. A. Arif, N. Tansu, P. Kumnorkaew, and J. F. Gilchrist, “Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO2/polystyrene microlens arrays,” Appl. Phys. Lett. 91, 221107 (2007). [7] T. Dai, B. Zhang, X. Kang, K. Bao, W. Zhao, D. Xu, and Z. Gan, “GaN-based light emitting diodes with large area surface nano-structures patterned by anodic aluminum oxide templates,” Proc. SPIE 6910, 69100P (2008). [8] M. Fujita, S. Takahashi, Y. Tanaka, T. Asano, and S. Noda, “Simultaneous Inhibition and Redistribution of Spontaneous Light Emission in Photonic Crystals,” Science 308, 5726, 1296-1298 (2005). [9] R. Sharma, Y. S. Choi, C. F. Wang, A. David, C. Weisbuch, S. Nakamura, and E. L. Hu, “Gallium-nitride-based microcavity light-emitting diodes with air-gap distributed Bragg reflectors,” Appl. Phys. Lett. 91, 211108 (2007). [10] Y. C. Shen, J. J. Wierer, M. R. Krames, M. J. Ludowise, M. S. Misra, F. Ahmed, A. Y. Kim, G. O. Mueller, J. C. Bhat, S. A. Stockman, and P. S. Martin, “Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes,” Appl. Phys. Lett. 82, 2221 (2003). [11] H. W. Choi, C. Liu, E. Gu, G. McConnell, J. M. Girkin, I. M. Watson, and M. D. Dawson,“GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses,” Appl. Phys. Lett. 84, 2253 (2004). [12] X. H. Huang, J. P. Liu, Y. Y. Fan, J. J. Kong, H. Yang, and H. B. Wang, 'Effect of Patterned Sapphire Substrate Shape on Light Output Power of GaN-Based LEDs,' IEEE Photon. Technol. Lett. 23, 944 (2011). [13] T. C. Hennessy, Lithography: Principles, Processes & Materials (2011).
dc.identifier.uri	http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/65047	-
dc.description.abstract	我們利用雷射干涉微影製程，成功製造出了p-型氮化鎵表面具有不同週期表面光柵結構之發光二極體，並量測其發光強度與電特性。經由製程參數的調整，我們可在製作週期不同之一維光柵結構時，將光柵溝槽深度與溝槽寬比例控制在一個範圍內。經過電特性的量測，我們發現表面具有光柵結構之元件其電阻較表面平坦的參考元件為大，且隨著週期變大有略微上升的趨勢。發光強度的量測結果則顯示：相較於參考元件，表面具有光柵結構之元件，在發光效率上有大幅的增加，而增強的幅度同樣隨週期變大而上升。由變化角度之發光強度量測結果也得到相同的變化趨勢。	zh_TW
dc.description.abstract	The variations of the output intensity and electrical property of a surface-grating lateral light-emitting diode (LED) with different grating periods on the p-GaN mesa are demonstrated. By fabricating one-dimensional surface gratings of similar duty cycles and groove depths, it is found that the device resistance of a surface grating LED is higher than that of the reference LED of a flat mesa surface. Also the device resistance increases slightly with increasing grating period. The output intensity of a surface grating LED is higher than that of the reference LED. Also, it increases when the grating period is increased. The measurement of angle-dependent output intensity shows the consistent results.	en
dc.description.provenance	Made available in DSpace on 2021-06-16T23:18:31Z (GMT). No. of bitstreams: 1 ntu-101-R99941072-1.pdf: 2448074 bytes, checksum: 4f1fcf9d90a356344357cb44b59c7b29 (MD5) Previous issue date: 2012	en
dc.description.tableofcontents	Content 口試委員會審定書………………………………………… i 誌謝………………….…………………………………………ii 中文摘要………………………………………...……………iii Abstract.……………………………………………..………. iv Content………………………………………………………....v Chapter 1 Introduction…………………………………….....1 1.1 Motivation………………………………………………...1 1.2 GaN-based Light-emitting Diode………………………..1 1.3 Light Extraction Efficiency (LEE)………………………2 1.4 Laser Interference Lithography (LIL)………………….8 Chapter 2 Surface-grating Light-emitting Diodes with the Lateral Configuration……………………………………….10 2.1 Introduction......................................................................10 2.2 Device Fabrication……………………………………....10 2.3 Device Characterization Results……………………….20 2.4 Discussions……………………………………………….27 Chapter 3 Conclusions……………………………………….32 References…………………………………………………….34
dc.language.iso	en
dc.subject	表面光柵	zh_TW
dc.subject	感應式電漿蝕刻機	zh_TW
dc.subject	發光二極體	zh_TW
dc.subject	Surface grating	en
dc.subject	Light-emitting diode	en
dc.subject	ICP-RIE etching	en
dc.title	表面光柵發光二極體製作及特性分析	zh_TW
dc.title	Fabrication and Characterization of Surface-grating Light-emitting Diodes	en
dc.type	Thesis
dc.date.schoolyear	100-2
dc.description.degree	碩士
dc.contributor.oralexamcommittee	江衍偉,黃建璋
dc.subject.keyword	表面光柵,發光二極體,感應式電漿蝕刻機,	zh_TW
dc.subject.keyword	Surface grating,Light-emitting diode,ICP-RIE etching,	en
dc.relation.page	36
dc.rights.note	有償授權
dc.date.accepted	2012-08-01
dc.contributor.author-college	電機資訊學院	zh_TW
dc.contributor.author-dept	光電工程學研究所	zh_TW
顯示於系所單位：	光電工程學研究所

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