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標題: | 銻磷砷化鎵與銻磷化銦鎵之特性及在異質接面雙極性電晶體之應用 GaAsPSb and InGaPSb Alloys : Properties and Applications to Heterojunction Bipolar Transistors |
作者: | Yu-Chung Chin 金宇中 |
指導教授: | 林浩雄 |
關鍵字: | 銻磷砷化鎵,形變位能,負彎曲的自旋-軌道角動量分裂能量,第二型能帶位準,異質接面雙極性電晶體,銻磷化銦鎵,帶偏移, GaAsPSb,shear deformation potential,negative spin-orbital bowing,type II band alignment,HBT,InGaPSb,band offset, |
出版年 : | 2013 |
學位: | 博士 |
摘要: | 在本論文中,我們成功地以金屬有機氣相化學沉積成長了高品質的銻磷砷化鎵及銻磷化銦鎵薄膜,在銻磷砷化鎵方面: 我們以X-ray 來研究其晶格常數與(001),(115) 面的應變量 (strain) 並得出其晶格常數為5.6927埃。 經由壓電調制光譜分析 (piezo-reflectance) 與應變量的計算而得出其能隙 (energy gap) Eg 為 1.256 電子伏特 (eV) 與 形變位能 (shear deformation potential) b = -1.31電子伏特。我們也發現此種化合物具有極大的負彎曲的自旋-軌道角動量分裂能量 (negative bowing of spin-orbital splitting)。藉由分析其光激光 (photoluminescence),調制光譜 (photoreflectance) 與應變量,我們發現銻磷砷化鎵與砷化鎵接面之能帶位準為第二型能帶位準 (type II band alignment) 。此外,我們成功的製作出以銻磷砷化鎵為基極層 (base layer) 的異質接面雙極性電晶體 (HBT),由其電壓與電流特性知道此種材料對於實現低耗能、高線性度電晶體有非常大的潛力,再者,我們提出了一個藉由其光激光(photoluminescence)、電壓與電流及電壓與電容特性的方法來計算出其與砷化鎵之帶偏移(band offset) ,我們得出導電帶偏移 (ΔEC) : 44毫電子伏特 (meV),價電帶偏移 (ΔEV) : 221毫電子伏特。由此帶偏移,我們也得到了銻磷砷化鎵與砷化鎵接面之能帶位準為第二型能帶位準的結果。另外,在本論文中,我們也研究銻磷化銦鎵/砷化鎵異質接面雙極性電晶體的特性,成功地藉由其正反Gummel plots (forward and reverse Gummel plots) 得到銻磷化銦鎵/砷化鎵之能帶位準為第一型能帶位準且導電帶偏移與價電帶偏移分別為0.12電子伏特與0.35 電子伏特。由其電壓與電流特性知道此種材料有較大的自我加熱 (self-heating) 效應,在用於大功率電晶體時能提供自我的保護以防止元件因為崩潰而造成永久性的損壞。 In this dissertation, we have successfully grown high quality GaAsPSb and InGaPSb thin film by metal organic chemical vapor deposition. We measured the reciprocal space mapping of the GaAsPSb and found that its standing free lattice constant is 5.6927 A by calculating its strain on (004) and (115) lattice points. From piezo-reflectance results and strain calculation, we obtained that its band gap energy Eg and shear deformation potential b is 1.256eV and -1.31 eV respectively. We also found that it has a large negative spin-orbital bowing which is unusual in semiconductor alloys. Besides, by analyzing its photoluminescence together with the photoreflectance and strain, we concluded the type II band alignment of GaAsPSb/GaAs. We fabricated the InGaP/GaAsPSb/GaAs DHBT and measured its HBT characteristics including the forward and reverse Gummel plots, common emitter I-V and temperature dependent current gain. Its low turn-on voltage and temperature insensitive current gain indicate this material a great potential for high linearity and high efficiency HBT power amplifiers. Furthermore, our calculation indicated that the conduction and valence band offset of the GaAsPSb/GaAs junction is ΔEC = 44 meV and ΔEV = 221 meV respectively. The results also concluded the type II band alignment of GaAsPSb/GaAs. In addition, we investigated the InGaPSb/GaAs HBT and found the type I band alignment with ΔEC and ΔEV of 0.12 eV and 0.35 eV respectively. The lower ΔEV results in significant self-heating which prevents the device from permanent damage due to the breakdown. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/62979 |
全文授權: | 有償授權 |
顯示於系所單位: | 電子工程學研究所 |
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