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標題: | 以低溫共燒陶瓷製程製作用於電磁干擾檢測的兩種創新的近場磁場探針 Two kinds of innovative magnetic near-field probes fabricated in low temperature co-fired ceramics for electromagnetic interference detection |
作者: | Yien-Tien Chou 周晏田 |
指導教授: | 盧信嘉 |
關鍵字: | 電磁干擾,近場量測,近場磁場探針,高空間解析度,共模高通帶拒濾波器,電場耦合抑制,差分輸出,空間解析度改善, EMI,near-field measurement,magnetic near-field probe,high spatial resolution,common-mode high-pass and notch filter,electric field coupling suppression,difference output,spatial resolution improvement, |
出版年 : | 2013 |
學位: | 博士 |
摘要: | 隨著積體電路(IC)操作速度的大幅提升,與日益複雜的電路架構和密集封裝,電磁干擾(EMI)的問題日趨嚴重。電磁干擾產生由干擾源、干擾源傳輸路徑、輻射天線構成,為了有效的抑制電磁干擾,找出干擾源並消除它總是最有效率和低成本的解決方式。在現代的電子產品中,最大的干擾源大部分來自於積體電路的快速切換電流,為了快速精確地偵測此種類型的雜訊源,國際電工委員會(IEC)制定了IEC 61967標準系列,而其中的IEC 61967-3和IEC 61967-6標準為近場電磁場量測方法,其可提供詳細的IC表面電磁場分佈,表面電磁場分佈與電壓和電流傳輸路徑有關,電子工程師可依此資訊,快速的找出干擾源來debug電磁干擾。此兩種標準中的關鍵設備是近場量測探針,因此於此篇論文中,我們回顧過去與近場探針相關的論文並探討這些探針的優缺點,主要分別為電子式和光學式探針,更近一步的提出兩種創新的電子式磁場探針架構:
首先介紹數個以低溫共燒陶瓷製程製作,具低成本和堅固耐用特性的新型單端近場磁場探針。為了抑制電場耦合,將平行C形金屬帶和其變形插入探針前端的迴路區來形成多種共模高通帶拒濾波器,這些具有此種濾波器的探針擁有極好地寬頻電場抑制,我們稱其為高電場抑制探針,依序命名為A至D型,在全部單端探針中,迴路孔隙尺寸皆為100微米長和400微米寬,而由迴路接收到的訊號經由一外徑為0.047英吋的半硬式同軸線傳輸到量測儀器,且使用具低損耗和良好屏蔽特性的覆晶技術來連接在低溫共燒陶瓷中的探針頭和半硬式同軸線。我們將探針放置在一寬度為2000微米的微帶線上方來量測探針特性,對一個根據舊設計實現的對照組探針來說,頻率範圍從0.05到12.65 GHz,其電磁場隔離度大於30 dB,而對具有雙平行C形金屬帶的A型探針來說,頻率範圍從0.1到11.05 GHz,其電磁場隔離度大於35 dB。將C形金屬帶的一端短路到地,可得一C型探針,在電磁場隔離度大於30 dB的條件下,其操作頻率範圍可擴大到0.05~17.8 GHz。具附加的佈局變化的D型探針,在頻率高達10.9 GHz時,其電磁場隔離度仍可超過40 dB。當微帶線金屬表面和迴路最下緣間的距離維持120微米時,這些探針的空間解析度可達到140微米。與對照組探針比較起來,新型探針的校準因子(CF)僅稍微增加。 其次,為了達到高空間解析度,傳統式探針必須縮小迴路尺寸,然而,較小的迴路會導致探針的靈敏度變低,除此之外,迴路尺寸總是受限於製程的最小線距。另一個問題是當非對稱電場耦合到探針時,即使探針結構是對稱的,此耦合電場仍不能完全抵消,為了解決這些問題,在本論文中,我們提出一具有三種空間解析度的空間差分式近場磁場探針,此探針頭部也是以低溫共燒陶瓷實現並包含一單圈迴路和一雙圈迴路,單圈迴路被雙圈迴路包夾,而此兩迴路被兩屏蔽地金屬板包覆來形成一三層板結構,此兩迴路接收到的訊號經由兩帶線和SMA接頭輸出,同樣地使用覆晶技術連接探針頭和帶線來完成組裝。使用一組抗為50歐姆和寬度為436微米的微帶線來量測探針特性,因為兩個不同的迴路位於微帶線上方不同高度處,所以探針的兩輸出埠會有不同的空間解析度,而接收訊號被差分輸出時,此差分式探針會有更高的空間解析度,當與一空間解析度可與差分式探針媲美的平衡雙負載式探針比較時,藉由電磁模擬可發現因為兩迴路同時接收相似的電場,所以當執行差分操作後,所提出的差分式探針可以很好地抑制側邊電場耦合 With increasing operation speed, ever-complicated circuit structure, and dense packaging, electromagnetic interference (EMI) problem of electronic products becomes more and more serious. In general, EMI generation can be viewed as three parts: interference source, interfering path, and radiation antenna. To effectively suppress EMI, finding out the interference sources and eliminating them are always the most efficient and low-cost solution. In modern electronic products, most interference sources are caused by the rapid switching current of the integrated circuits (ICs). International Electrotechnical Commission (IEC) defines the IEC 61967 standard series to rapidly and accurately detect this kind of emission sources. The third and sixth parts of this standard series introduce the electromagnetic near-field (NF) measurement method. The detailed electromagnetic field distribution related to the voltage and current flowing paths over the surface of the IC device under test (DUT) can be obtained using this NF scanning method. Electrical engineers can debug the EMI according to the information of the field distribution. NF probe is the key component of the surface field scan method. Therefore, we review the previous papers concerning the NF probes and discuss their characteristics. They are mainly typed as electrical and optical probes, and then we further propose two kinds of innovative electrical probe structures in this dissertation. Firstly, several new types of low-cost and robust single-ended magnetic NF probes fabricated in low temperature co-fired ceramics (LTCC) are presented. Parallel C-shaped strips and its variations are inserted into the loop area in the front end of probes to achieve common-mode high-pass and notch filters for electric-field noise suppression. These probes with this kind of filter have excellent wideband electric field suppression. They are named as high electric field suppression (HEFS) probes type A~D. The size of loop aperture in all probes is 100 μm long and 400 μm wide. The signal received from the loop is routed to a measurement apparatus through a semi-rigid coaxial cable with outer diameter of 0.047 in. The flip-chip junction with low loss and good shielding is used between the probe head in LTCC and the semi-rigid coaxial cable. We take the probes over a 2000-μm-wide microstrip line as DUT to measure the probe characteristics. The isolation between electric and magnetic fields for a reference probe based on an old design using the same LTCC process is better than 30 dB from 0.05 to 12.65 GHz. Proposed type A probe has two parallel C-shaped strips, and it has better isolation of 35 dB from 0.1 to 11.05 GHz. Type C has one end of its strip shorted to ground, its 30 dB isolation frequency range can be extended to 0.05~17.8 GHz. With additional layout variation in type D, isolation can be improved to 40 dB up to 10.9 GHz. The spatial resolution for these probes is 140 μm when the distance between the metal surface of the microstrip line and the nearest edge of the loop is held at 120 μm. The calibration factors (CFs) of the proposed probes are only slightly increased as compared with reference probe. Secondly, to achieve good spatial resolution, small loop size is required in the traditional loop probe. However, the smaller loop size will lead to the lower sensitivity for the probe. In addition, loop size is always limited by the minimum line spacing of the fabrication process. Another problem is that the asymmetric electric field coupling into a probe will not be canceled perfectly even if the structure of this probe is symmetric. To circumvent these problems, the space difference magnetic NF probe with three kinds of spatial resolutions is proposed in this dissertation. The probe head including a single-turn loop and a two-turn loop is also manufactured in LTCC. The single-turn loop is clamped with the two-turn loop. Two loops are covered with two shielding ground plates to form a tri-plate structure. The received signals from these two loops are outputted with two SMA connectors through two striplines. In the same way, the flip-chip junction is used between the probe head and the striplines for assembly. The probe characteristics are measured using a 436-μm-wide microstrip line with impedance of 50 Ω. Two output ports have different spatial resolutions because two different loops are located above the microstrip line at different heights. The space difference probe will have higher spatial resolution when the received signals are outputted in difference. In comparison with one smaller double-loaded probe whose resolution is comparable to that of this difference output of the proposed probe by EM simulation, the proposed spatce difference probe can suppress the side electric field coupling well by the difference operation because two loops receive approximate electric field simultaneously. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/62022 |
全文授權: | 有償授權 |
顯示於系所單位: | 電子工程學研究所 |
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