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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
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dc.contributor.advisor | 黃俊郎(Jiun-Lang Huang) | |
dc.contributor.author | Chun-Pei Tai | en |
dc.contributor.author | 戴君珮 | zh_TW |
dc.date.accessioned | 2021-06-16T13:10:29Z | - |
dc.date.available | 2018-08-08 | |
dc.date.copyright | 2013-08-08 | |
dc.date.issued | 2013 | |
dc.date.submitted | 2013-07-31 | |
dc.identifier.citation | [1] Uksong Kang, Hoe-Ju Chung, Seongmoo Heo, Duk-Ha Park, Hoon Lee, Jin-Ho Kim, Soon-Hong Ahn, Soo-Ho Cha, Jaesung Ahn, DukMin Kwon, Jae-Wook Lee, Han-Sung Joo, Woo-Seop Kim, Dong Hyeon Jang, Nam Seog Kim, Jung-Hwan Choi, Tae-Gyeong Chung, Jei-Hwan Yoo, Joo-Sun Choi, Changhyun Kim, Young-Hyun Jun, '8 Gb 3-D DDR3 DRAM Using Through-Silicon-Via Technology,' Solid-State Circuits, IEEE Journal of , vol.45, no.1, pp.111,119, January 2010
[2] Jung-Sik Kim, Chi Sung Oh, Hocheol Lee, Donghyuk Lee, Hyong-Ryol Hwang, Sooman Hwang, Byongwook Na, Joungwook Moon, Jin-Guk Kim; Hanna Park, Jang-Woo Ryu, Kiwon Park, Sang-Kyu Kang, So-Young Kim, Hoyoung Kim, Jong-Min Bang, Hyunyoon Cho, Minsoo Jang, Cheolmin Han, Jung-Bae Lee, Kyehyun Kyung, Joo-Sun Choi, Young-Hyun Jun, 'A 1.2V 12.8GB/s 2Gb mobile Wide-I/O DRAM with 4×128 I/Os using TSV-based stacking,' Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International , pp.496,498, 20-24 February 2011 [3] Hyunjin Kim, Abraham J.A., 'A Built-In Self-Test scheme for DDR memory output timing test and measurement,' VLSI Test Symposium (VTS), 2012 IEEE 30th , pp.7,12, 23-25 April 2012 [4] Chih-Sheng Hou, Jin-Fu Li, Chih-Yen Lo, Ding-Ming Kwai, Yung-Fa Chou, Cheng-Wen Wu, 'An FPGA-based test platform for analyzing data retention time distribution of DRAMs,' VLSI Design, Automation, and Test (VLSI-DAT), 2013 International Symposium on , pp.1,4, 22-24 April 2013 [5] Suk-Soo Pyo, Cheol-Ha Lee, Gyun-Hong Kim, Kyu-Myung Choi, Young-Hyun Jun, Bai-Sun Kong, '45nm low-power embedded pseudo-SRAM with ECC-based auto-adjusted self-refresh scheme,' Circuits and Systems, 2009. ISCAS 2009. IEEE International Symposium on, pp.2517,2520, 24-27 May 2009 [6] Integrated Silicon Solution, Inc., IS42S16400J, IS45S16400J User Manual, Integrated Silicon Solution, Inc., Taiwan, 2012. [7] Bruce Jacob, Spencer W. NG, David T. Wang, Memory Systems Cache, DRAM, Disk, MK., Amsterdam, Boston, Heidelberg london, New York, Oxford, Paris, San Diego, San Francisco, Singapore, Sydney, Tokyo, 2008 [8] Integrated Silicon Solution, Inc., IS42S86400B IS42S16320B IS45S16320B User Manual, Integrated Silicon Solution, Inc., Taiwan, 2009. [9] R. Dean Adams, High Performance Memory Testing: Design Principles, Fault Modeling and Self-Test, Kluwer Academic Publishers, Boston/ Dordrecht/ London, 2003 | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/61713 | - |
dc.description.abstract | 同步動態隨機存取記憶體(SDRAM)隨著運算量的增加,需求量也隨之成長,找尋便宜的測試方式成為一重要課題。我們希望能找尋低成本的SDRAM測試器,因此本論文提出將SDRAM測試器建置在便宜的現場可程式閘陣列(FPGA)板上,且FPGA板可藉由燒錄方式快速修改測試器的測試目標,不僅降低測試成本也可提供一個多樣性的測試環境。
本論文將記憶體測試機台建置於相對便宜的FPGA板上,並提出三種不同的測試操作方式,包含原始操作法測試方式、一般功能用操作法測試方式、及最佳化測試時間操作方式,三種操作方式皆使用March C-測試圖樣來對SDRAM做測試,且因FPGA板具有可快速重新燒錄的特性,本論文將分析在不同的操作方式下,針對幾項重要時間參數來探討,SDRAM的測試極限所在。 | zh_TW |
dc.description.abstract | It has been an importance issue in finding a cheap testing method, since the requirement for SDRAM is increasing because of the complex computation. Therefore, we hope to find a cheaper way to replace expensive test station and reduce cost. This thesis proposed an FPGA based SDRAM tester utilizing the characteristic of reconfiguration, it can achieve the low cost and variety test environment at the same time.
Establishing the tester on the cheaper tester, this thesis proposed three different test methods, including primitive method, normal mode operation method and optimized operation method. All of the three methods are tested under March C- pattern, and we will analyze the few important parameters under the above mentioned test method to explore the limit of SDRAM. | en |
dc.description.provenance | Made available in DSpace on 2021-06-16T13:10:29Z (GMT). No. of bitstreams: 1 ntu-102-R00943148-1.pdf: 3932633 bytes, checksum: 6cfb4c4b070c363ff07b290573f6aa50 (MD5) Previous issue date: 2013 | en |
dc.description.tableofcontents | 致謝 I
摘要 II Abstract III 目錄 IV 圖目錄 VI 表目錄 VIII 第1章 簡介 1 1.1 相關背景與動機 1 1.2 論文架構 3 第2章 記憶體測試 4 2.1 記憶體測試簡介 4 2.2 記憶體Fault Model 5 2.3 記憶體測試圖樣– March C- Pattern 6 第3章 SDRAM系統架構與操作時序 7 3.1 SDRAM簡介及內部結構 7 3.2 SDRAM規格與硬體架構 8 3.3 SDRAM狀態及操作時序 13 3.3.1 SDRAM狀態簡介 13 3.3.2 初始化SDRAM(Initialization) 18 3.3.3 Set Mode Register 20 3.3.4 選取作用Bank和Row (Active Command) 22 3.3.5 讀取資料 (READ Command) 23 3.3.6 寫入資料 (WRITE Command) 24 3.3.7 Precharge 25 3.1 SDRAM時間參數 26 3.1.1 SDRAM時間參數簡介 26 3.1.2 時間參數特性 28 第4章 於FPGA上SDRAM 測試電路分析與實現 32 4.1 硬體架構 32 4.2 Type I 測試電路–原始操作法測試方式 34 4.2.1 演算法及時序圖 34 4.2.2 測試時間分析 37 4.3 Type II 測試電路 – 一般功能用操作法測試方式 39 4.3.1 演算法及時序圖 39 4.3.2 測試時間分析 41 4.4 Type III 測試電路 –最佳化測試時間操作方式 43 4.4.1 演算法及時序圖 43 4.4.2 測試時間分析 45 第5章 實驗結果 48 5.1 實驗環境與設計流程 48 5.2 一般測試 49 5.3 速度測試分析 50 第6章 結論 60 參考文獻 62 | |
dc.language.iso | zh-TW | |
dc.title | 以現場可程式閘陣列實現之同步動態隨機存取記憶體測試器 | zh_TW |
dc.title | An FPGA Based SDRAM Tester | en |
dc.type | Thesis | |
dc.date.schoolyear | 101-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 李建模(Chien-Mo Li),李進福(Jin-Fu Li),黃炫倫(Xuan-Lun Huang) | |
dc.subject.keyword | 現場可程式閘陣列,同步動態隨機存取記憶體,測試, | zh_TW |
dc.subject.keyword | FPGA,SDRAM,testing, | en |
dc.relation.page | 63 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2013-07-31 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
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