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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/59161完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 蔡豐羽(Feng-Yu Tsai) | |
| dc.contributor.author | Yen-Yun Lien | en |
| dc.contributor.author | 連彥昀 | zh_TW |
| dc.date.accessioned | 2021-06-16T09:16:59Z | - |
| dc.date.available | 2020-08-20 | |
| dc.date.copyright | 2020-08-20 | |
| dc.date.issued | 2020 | |
| dc.date.submitted | 2020-08-14 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/59161 | - |
| dc.description.abstract | 氧化錫是常用於有機無機混合鈣鈦礦太陽能電池電子傳輸層的材料之一，因為它具有高的載子遷移率，能階也與鈣鈦礦相匹配。目前文獻中對於做為電子傳輸層的低溫製程氧化錫薄膜，通常是使用旋塗氧化錫奈米顆粒懸浮液的方式製備。雖然使用此方法製備電子傳輸層的鈣鈦礦太陽能電池已能達到高效率，在前驅物準備上仍較複雜。為了找到一種更簡單的方法，此篇研究利用高反應性有機錫前驅物—異丙醇錫，透過較簡單的溶膠凝膠法在低溫下製備高品質的氧化錫薄膜，其電導率大於3.1 × 10-3 S/cm，也成功以此氧化錫薄膜做為鈣鈦礦太陽能電池之電子傳輸層，此太陽能電池元件的能量轉換效率可達15%。接著我們進一步研究此氧化錫薄膜的成膜機制，藉由化學和表面分析，發現燒結環境的相對濕度是影響氧化錫成膜的重要因素。相對濕度高的燒結環境可使反應中濕膜的乾燥時間拉長，令中間產物有足夠的時間進行縮合反應，使得反應更完全，最終得到具較低電阻的高品質氧化錫電子傳輸層。 | zh_TW |
| dc.description.abstract | Tin oxide (SnOx) is one of the commonly used electron transporting materials for organic-inorganic hybrid perovskite solar cells (PSCs) as well as other types of electronic devices thanks to its excellent electronic properties. Currently, low-temperature, solution-based processing of SnOx films for electron transporting applications have relied upon casting from dispersion solutions of pre-synthesized SnOx nanocrystals. Aiming for a simpler method, this study demonstrated a low-temperature sol-gel process for fabricating high-quality SnOx films utilizing a high-reactivity organotin precursor, tin (IV) isopropoxide (TIP). The key to obtaining high electrical conductivity from the sol-gel SnOx films at low processing temperatures was identified to be a high-humidity annealing environment. By using > 70% relative humidity (R.H.), SnOx films with conductivity > 3.1 × 10-3 S/cm could be fabricated at annealing temperatures ranging from 25 to 85 C, which when incorporated into PSC devices as electron-transporting layers yielded power conversion efficiency > 15%. Chemical and surface analysis revealed that the beneficial effects of the high-humidity annealing environment originated from the slower sol-gel condensation reaction rates at higher R.H., which allowed more thorough removal of reaction byproducts, resulting in lower impurity in the SnOx films. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-16T09:16:59Z (GMT). No. of bitstreams: 1 U0001-1408202015462300.pdf: 2858129 bytes, checksum: b2051f20337d6ed077225778898a27df (MD5) Previous issue date: 2020 | en |
| dc.description.tableofcontents | 口試委員會審定書 ii 誌謝 iii 摘要 iv Abstract v Content vii List of Figures x List of tables xii Chapter 1 Introduction and Literature review 1 1.1 Introduction of perovskite solar cell 1 1.2 Carrier transporting layers of PSC 5 1.2.1 Introduction of carrier transporting layer 5 1.2.2 Advantages of SnOx as electron transporting layer 7 1.3 Review of tin oxide as an electron transporting layer 9 1.3.1 ALD deposited tin oxide ETL 9 1.3.2 CBD deposited tin oxide ETL 9 1.3.3 Sol-gel process tin oxide ETL 11 1.3.4 Summary of tin oxide as an electron transporting layer 15 1.4 Objective statement 19 Chapter 2 Experimental details 20 2.1 Materials 20 2.2 Sol-gel SnOx thin film fabrication 20 2.3 Perovskite solar cell fabrication 22 2.4 Characteristic and analysis 25 Chapter 3 Results and discussions 26 3.1 Thermal and humidity effect on TIP/SnOx sol-gel process 26 3.2 Mechanism of relative humidity affecting on SnOx thin film formation 30 3.2.1 Crystal structure and morphology 32 3.2.2 Chemical composition analysis 34 3.2.3 Surface analysis 38 3.3 Performance of perovskite solar cell with SnOx ETL 39 Chapter 4 Conclusion and Future work 41 4.1 Conclusion 41 4.2 Future work 43 Reference 45 Appendix 52 | |
| dc.language.iso | en | |
| dc.subject | 溶膠凝膠法 | zh_TW |
| dc.subject | 鈣鈦礦 | zh_TW |
| dc.subject | 太陽能電池 | zh_TW |
| dc.subject | 氧化錫 | zh_TW |
| dc.subject | 異丙醇錫 | zh_TW |
| dc.subject | 低溫製程 | zh_TW |
| dc.subject | Sol-gel process | en |
| dc.subject | Perovskite | en |
| dc.subject | Solar cell | en |
| dc.subject | Tin oxide | en |
| dc.subject | Tin isopropoxide | en |
| dc.subject | Low-temperature process | en |
| dc.title | 以溶膠凝膠法於低溫下製備氧化錫薄膜作為鈣鈦礦太陽能電池之電子傳輸層 | zh_TW |
| dc.title | Tin oxide thin films by a low-temperature sol-gel process as electron transporting layer of perovskite solar cell | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 108-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 林唯芳(Wei-Fang Su),陳奕君(I-Chun Cheng) | |
| dc.subject.keyword | 鈣鈦礦,太陽能電池,氧化錫,異丙醇錫,低溫製程,溶膠凝膠法, | zh_TW |
| dc.subject.keyword | Perovskite,Solar cell,Tin oxide,Tin isopropoxide,Low-temperature process,Sol-gel process, | en |
| dc.relation.page | 54 | |
| dc.identifier.doi | 10.6342/NTU202003438 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2020-08-15 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
| 顯示於系所單位： | 材料科學與工程學系 | |
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| U0001-1408202015462300.pdf 未授權公開取用 | 2.79 MB | Adobe PDF |
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