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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/56363
標題: | 具不同蝕刻方式圖案化藍寶石基板上之氮化銦鎵類發光二極體 InGaN-based Light-Emitting Diodes Grown on Patterned-Sapphire Substrates with Different Etching Methods |
作者: | Han-Bo Yang 楊涵博 |
指導教授: | 管傑雄(Chieh-Hsiung Kuan) |
關鍵字: | 氮化鎵發光二極體,圖案化藍寶石基板,電子束微影,量子侷限史塔克效應,奈米結構, Light-emitting diode,QCSE,MOCVD,NPSSs,Electron-beam lithography,Wet-etching, |
出版年 : | 2014 |
學位: | 碩士 |
摘要: | 成長在藍寶石基板上的氮化銦鎵類發光二極體,因磊晶層與藍寶石基板間的晶格常數不匹配以及熱膨脹係數的差異,使得元件內部產生量子侷限化史塔克效應,進而造成氮化銦鎵類發光二極體發光效率下降。因此,本篇論文將藉由不同蝕刻製程方法製作微結構圖案於藍寶石基板上,探討對氮化銦鎵類發光二極體造成的影響。吾人使用電子束微影系統搭配乾濕式蝕刻技術,製作出不同週期、相同深度與相同基板佔有比例的微結構於藍寶石基板上,並使用有機金屬化學氣相沉積系統進行氮化銦鎵類材料磊晶。其後,將使用拉曼光譜系統確認磊晶品質,光致激發螢光系統量測主動層發光特性,同時亦使用模擬軟體計算發光二極體的光萃取效率。 InGaN-based Light-Emitting Diodes (LEDs) are typically grown along c-plane sapphire substrates. The significant biaxial strain originated from the huge lattice mismatch between the InGaN active layer and the underlying GaN layer possesses piezoelectric electrical polarization; the intrinsic wurtzite crystal structure induces large spontaneous electric polarization as well. The total polarization fields result in quantum-confined Stark effect (QCSE). Therefore, the effects of the growths of InGaN-based materials on the patterned-sapphire substrates (PSSs) with different etching methods will be discovered in this thesis. The PSSs with various periodic square arrays, comprised the same depth, the same post-duty cycle, will be fabricated by conducting E-beam lithography system accompanied with different etching methods. After the epitaxial growth, to begin with, the constant-excitation power of micro-Raman (μ-Raman) system was utilized to provide comparison of the strain in the bulk layer. The samples were then characterized by the constant-excitation power of micro-photoluminescence (μ-PL) measurement to indentify the reduction in the internal field in the multiple quantum wells (MQWs). In addition, the light-extraction efficiency (LEE) of the PSSs was also simulated by the ray-tracing method using the Trace-Pro software. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/56363 |
全文授權: | 有償授權 |
顯示於系所單位: | 電子工程學研究所 |
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