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標題: | 應用紅外線快速昇溫製程於氧化亞錫薄膜與氧化亞錫二極體之研究 A study on SnO thin films and SnO diodes using infrared rapid thermal annealing process |
作者: | Yu-Hao Jiang 蔣宇皓 |
指導教授: | 陳建彰(Jian-Zhang Chen) |
關鍵字: | 快速昇溫製程,氧化亞錫,氧化亞錫二極體, Infrared rapid thermal annealing process,SnO,SnO diodes,p-type oxide,flexible electronics, |
出版年 : | 2015 |
學位: | 碩士 |
摘要: | 本論文主要是探討以快速昇溫製程來對氧化亞錫薄膜進行熱處理,並將此材料應用於軟性基板上。我們選定的變數為持溫時間與退火溫度,基於上述原因,所以我們將持溫時間限縮至10分鐘內,而退火溫度則是定於225°C至265°C之間。
本實驗使用射頻磁控濺鍍系統在室溫下沉積氧化亞錫薄膜,並利用快速後退火之方式對薄膜進行處理。在薄膜的晶格結構分析中,氧化亞錫薄膜的主要晶格方向以SnO (1 0 1)方向與SnO (1 1 0)方向為主。退火後薄膜表面有明顯的金屬錫顆粒產生,而表面粗糙度方面,則是隨著退火溫度增加而減少。未退火的薄膜偏向金屬相,錫氧原子比值隨退火溫度與持溫時間之增加而有小幅度的下降。鍵結方面則是二價錫隨退火溫度上升而增加,但隨著持溫時間增加卻無明顯的改變。在薄膜光學性質方面,可見光穿透度隨著退火溫度上升而上升,而直接能隙則是從2.73eV上升至2.82eV。在薄膜電性質方面,在所有的實驗參數下,其霍爾量測與席貝克係數皆顯示薄膜為p型半導體,退火溫度為245°C持溫2.5分鐘退火條件的試片有最佳之載子遷移率(0.825 cm2/V-s),並隨著持溫時間的上升而下降,而載子濃度則隨著退火溫度與持溫時間增加而增加,席貝克係數方面則是隨著退火溫度與持溫時間增加而下降。在薄膜機電性質方面,在張應變下其薄膜電阻率上升,在壓應變下其薄膜電阻率則下降,並且隨著退火溫度增加其材料在機械應力下的電性穩定性越好。 接下來我們將氧化亞錫薄膜應用於蕭特基與異質接面二極體上,在蕭特基二極體方面,其擁有較低之啟動電壓(約3.2V),最好之整流值為38。而在異質接面二極體,由於薄膜缺陷太多,導致漏電情況很嚴重,所以我們加入本徵層來改善此問題,雖然整流值得到改善(約66),但是卻增加其啟動電壓(約4V)。 This thesis reports the tin monoxide (SnO) thin films that were deposited by RF-sputtering technique and post-annealed by infrared rapid thermal furnace (hereafter referred to as RTA). We investigated the crystallinity, surface morphology, chemical composition, optical properties, electrical properties and electromechanical properties of tin monoxide thin film post-annealed at 225, 245, and 265 °C for 2.5, 5, 7.5, 10 min in air ambient. SnO thin films were then used for the Schottky diodes and the PIN diodes. 120-nm-thick SnO thin films were sputter-deposited on glass substrates without intentional heating on the substrate. X-ray diffraction analyses indicate the existence of metallic Sn and SnO phases in the films. The preferred orientation of SnO crystals are (110) and (101). Metallic Sn particles and strip-wise features appeared in the samples annealed at lower temperature, as evidenced by SEM and AFM results. The EPMA results demonstrate that the [Sn]/[O] atomic ratio of SnO thin films about 70/30 and XPS results reveal that SnO phase is the dominant phases after RTA processes. The Tauc’s bandgap is calculated as 1.8 eV for as-deposited and increases to ~2.8 eV after RTA processes. P-type conductivity is confirmed for all RTA-processed films by Hall and Seebeck coefficient measurement. The best achieved hole mobility is 0.825 cm2 V-1 s-1 for SnO thin films annealed at 245°C for 2.5 min and the mobility value decreases as RTA duration increases. In either stretching test or bending test, the SnO thin films annealed at 265°C showed the best electrical stability under same mechanical strain. The SnO films were then successfully used for the Schottky and PIN diodes. Rectifying characteristic was clearly demonstrated with rectified values of 38.0 and 66.1, respectively. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/53923 |
全文授權: | 有償授權 |
顯示於系所單位: | 應用力學研究所 |
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