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Title: | 以X光吸收近緣結構分析矽在重度矽摻雜砷化銦中的短距離結構 Short-range structure of Si in heavily Si doped InAs studied by X-ray Absorption Near Edge Structure |
Authors: | Mu-Chi Liu 劉牧奇 |
Advisor: | 林浩雄(Hao-Hsiung Lin) |
Keyword: | 矽,砷化銦,短距離結構,X光吸收近緣結構,FEFF9, Si,InAs,short-range structure,XANES,FEFF9, |
Publication Year : | 2015 |
Degree: | 碩士 |
Abstract: | 本論文研究主題為矽(Si)原子在以使用MBE生長的高濃度Si摻雜砷化銦(InAs)薄膜中的短距離結構。我們建立不同的Si原子短距離結構模型,並利用FEFF9軟體模擬各種短距離結構的Si K-edge的X光吸收近緣結構(X-ray absorption near edge structure, XANES)頻譜。藉由比對首次由實驗測得的高濃度Si摻雜InAs薄膜的Si K-edge XANES結果和模擬的圖形來推斷出Si原子的短距離結構。
我們發現在高濃度Si摻雜的InAs薄膜中,Si原子會取代In原子形成SiIn結構,與最鄰近的4個砷(As)原子的長度將縮減至2.230 A,並且帶有+0.5的等效電荷,形成n型摻雜雜質。Si原子取代As原子的短距離結構(SiAs)以及SiIn-SiAs成對摻雜的短距離結構不易出現在高濃度Si摻雜的InAs薄膜中。 We successfully measured the Si K-edge X-ray absorption near edge structure (XANES) spectra within the heavily Si doped InAs thin film grown by molecular beam epitaxy (MBE). By comparing the experiment results with the simulation spectrum of different local structures calculated by FEFF9 program, we realize the local structure of Si atoms within InAs. Si atom tend to replace the In atom (SiIn) in heavily Si doped InAs, becoming an n-type dopant. The distances between SiIn and 4 nearest As atoms will shrink to 2.230 A, and the SiIn will be ionized by an effective charge of +0.5. The p-type dopant or pair diffusion local structures of Si atom are unlikely to appear in the heavily Si doped InAs. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/52738 |
Fulltext Rights: | 有償授權 |
Appears in Collections: | 光電工程學研究所 |
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ntu-104-1.pdf Restricted Access | 3.01 MB | Adobe PDF |
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