請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/52378
標題: | 預濃縮晶片最佳化之數值模擬與實驗研究與渦旋現象分析 A Study on Preconcentrator for Chip Optimization and Vortex Phenomena Analysis: Numerical Simulation and Experiment |
作者: | Tsung-Hsien Huang 黃宗賢 |
指導教授: | 沈弘俊(Horn-Jiunn Sheen) |
關鍵字: | 微奈米流道,預濃縮晶片,數值模擬,渦旋,空乏區,離子選擇性通道, Preconcentration chip,Vortex,Depletion Region,Electroosmosis,Electrophoresis,Numerical Simulation, |
出版年 : | 2015 |
學位: | 碩士 |
摘要: | 本研究開發預濃縮晶片之2D、3D模擬模型,利用FEM (Finite Element Method)軟體COMSOL來模擬微流道濃縮晶片,透過耦合Nernst-Planck質量傳輸方程式、Navier-Stokes流體方程式、Poisson電荷方程式來模擬晶片內部離子、流場、電場交互作用的穩態、暫態狀況和結果,藉由模擬來預測、量化濃縮各個物理機制,並以實驗結果與模擬做比較和論證。 本研究特點為濃縮晶片中,離子空乏區量化與流場的暫態、穩態模擬。藉由模擬,成功預測空乏區的擴張型態、區域與電壓比例造成的流場分布,並探討流場中渦旋的現象和細節,與過去研究論點、自行實驗結果做驗證,更進一步幫助晶片設計和最佳化。晶片設計與最佳化包括降低工作電壓、實現可攜式裝置之功能、濃縮區域的形成位置預測等等。 經由濃縮晶片模擬及實驗結果的比對後,此模擬模型不僅對於濃縮機制有良好的現象量化及分析結果,並從其發現的機制做晶片最佳化設計、成功達到工作電壓降低,對其他裝置整合的研究,提供一個良好的模擬平台作為依據。 The purpose of the research was to investigate the Electrokinectic mechanism inside a preconcentration chip by experiment and numerical simulation. Chip Optimization was carried out by understanding the quantitative simulation result and vortex Phenomena. In this research a simulation model was built, coupling Nernst-Planck, Poisson, Navier-Stokes equations, and using finite element method to simulate and quantify the concentration process of preconcentration chip involving electrostatic, fluid mechanics and ion mass transportation. Furthermore, the simulation results were then validated through experiment results, both of which help to sketch a full phenomenon pattern inside the preconcentration chip: (1) Formation of expanding depletion region, (2) Vortex and depletion region connections, (3) Vortex Formation, (4) Voltage proportion influencing vortex flow field. With the proposed phenomenon pattern, chip optimization was conducted and successfully reduced the working voltage of concentration process. The study finding may serve as a guide for further research on device integrating design and chip optimization. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/52378 |
全文授權: | 有償授權 |
顯示於系所單位: | 應用力學研究所 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-104-1.pdf 目前未授權公開取用 | 4.71 MB | Adobe PDF |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。