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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 沈弘俊(Horn-Jiunn Sheen) | |
dc.contributor.author | Tsung-Hsien Huang | en |
dc.contributor.author | 黃宗賢 | zh_TW |
dc.date.accessioned | 2021-06-15T16:13:13Z | - |
dc.date.available | 2020-08-28 | |
dc.date.copyright | 2015-08-28 | |
dc.date.issued | 2015 | |
dc.date.submitted | 2015-08-17 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/52378 | - |
dc.description.abstract | 本研究開發預濃縮晶片之2D、3D模擬模型,利用FEM (Finite Element Method)軟體COMSOL來模擬微流道濃縮晶片,透過耦合Nernst-Planck質量傳輸方程式、Navier-Stokes流體方程式、Poisson電荷方程式來模擬晶片內部離子、流場、電場交互作用的穩態、暫態狀況和結果,藉由模擬來預測、量化濃縮各個物理機制,並以實驗結果與模擬做比較和論證。 本研究特點為濃縮晶片中,離子空乏區量化與流場的暫態、穩態模擬。藉由模擬,成功預測空乏區的擴張型態、區域與電壓比例造成的流場分布,並探討流場中渦旋的現象和細節,與過去研究論點、自行實驗結果做驗證,更進一步幫助晶片設計和最佳化。晶片設計與最佳化包括降低工作電壓、實現可攜式裝置之功能、濃縮區域的形成位置預測等等。 經由濃縮晶片模擬及實驗結果的比對後,此模擬模型不僅對於濃縮機制有良好的現象量化及分析結果,並從其發現的機制做晶片最佳化設計、成功達到工作電壓降低,對其他裝置整合的研究,提供一個良好的模擬平台作為依據。 | zh_TW |
dc.description.abstract | The purpose of the research was to investigate the Electrokinectic mechanism inside a preconcentration chip by experiment and numerical simulation. Chip Optimization was carried out by understanding the quantitative simulation result and vortex Phenomena. In this research a simulation model was built, coupling Nernst-Planck, Poisson, Navier-Stokes equations, and using finite element method to simulate and quantify the concentration process of preconcentration chip involving electrostatic, fluid mechanics and ion mass transportation. Furthermore, the simulation results were then validated through experiment results, both of which help to sketch a full phenomenon pattern inside the preconcentration chip: (1) Formation of expanding depletion region, (2) Vortex and depletion region connections, (3) Vortex Formation, (4) Voltage proportion influencing vortex flow field. With the proposed phenomenon pattern, chip optimization was conducted and successfully reduced the working voltage of concentration process. The study finding may serve as a guide for further research on device integrating design and chip optimization. | en |
dc.description.provenance | Made available in DSpace on 2021-06-15T16:13:13Z (GMT). No. of bitstreams: 1 ntu-104-R02543038-1.pdf: 4825322 bytes, checksum: 5234cc8836a33041368d97ef0c7f89cb (MD5) Previous issue date: 2015 | en |
dc.description.tableofcontents | 誌謝 i 中文摘要 ii Abstract iii Symbol iv Greek Symbol v 目錄 vi 圖目錄 ix 表目錄 xi 第一章 導論 1 1-1生物晶片 1 1-1.1微全程分析系統(Micro Total Analysis System, μ-TAS) 1 1-1.2免疫分析法 2 1-1.3樣本前處理之預濃縮晶片 3 1-2 電腦模擬簡介 5 1-2.1 有限元素法簡介(Finite Element Method, FEM) 5 1-2.2 有限元素法概念 6 1-3 研究動機與目的 6 1-4 研究方法 7 1-5 論文架構 7 第二章 預濃縮微奈米晶片文獻回顧暨原理 8 2-1預濃縮微奈米晶片發展 8 2-2預濃縮微奈米晶片之濃縮原理 11 2-2.1電雙層效應 12 2-2.2電雙層重疊效應(electric double layer overlap) 15 2-2.3離子的區域性空乏與濃縮現象 15 2-2.4離子選擇性薄膜之電壓與電流的S曲線 19 2-2.5預濃縮機制(Mechanism of preconcentration) 21 2-3以 Nafion®離子選擇性材料為奈米流道 22 2-4濃縮現象文獻討論 23 2-4.1 渦旋討論 23 2-4.2 空乏區擴張討論 27 2-4.3 電壓比例與電場、流場關係討論 27 2-4.4 電滲流流入多孔性材料之滲透率 28 2-4.5奈米流道之離子擴散與遷移特性 30 2-5理論公式 31 2-5.1 Poisson Equation 31 2-5.2 Nernst Planck Equation 32 2-5.3 Navier Stokes Equation 34 2-5.4 Brinkman Equation 35 2-5.5 Helmholtz-Smoluchowski Equation 36 2-6預濃縮晶片模擬回顧 37 第三章 預濃縮微奈米晶片實驗與模擬系統 40 3-1預濃縮實驗系統 40 3-1.1預濃縮實驗系統架構 40 3-1.2預濃縮實驗設備、耗材 41 3-1.3預濃縮晶片製程 42 3-1.4實驗步驟 42 3-2預濃縮模擬系統 46 3-2.1模擬系統建模步驟 47 3-2.2模擬系統建模幾何 48 3-2.3 區域材料參數設定 49 3-2.4 Governing Equations 52 3-2.5 Boundary Condition Equation 53 3-2.6 Initial Conditions 54 3-2.7 Boundary Conditions 54 3-2.8 Meshing 55 第四章 預濃縮微奈米晶片模擬與實驗結果討論 57 4-1預濃縮微奈米晶片模擬 57 4-1.1電場模擬 57 4-1.2空乏區擴張型態模擬 59 4-1.3渦旋方向、位置與空乏區關係討論 59 4-1.4電壓比例與空乏區、渦旋流場關係 61 4-2預濃縮微奈米晶片實驗結果 63 4-2.1實驗簡介 63 4-2.2空乏區擴張型態 63 4-2.3渦旋方向、位置與空乏區關係討論 65 4-2.4電壓比例與空乏區、渦旋流場關係 66 4-2.5初始流速方向與濃縮關係討論 68 4-3預濃縮微奈米晶片最佳化設計 69 4-3.1電流理論之晶片最佳化 69 4-3.2空乏區擴張現象之晶片最佳化 70 4-3.3晶片最佳化設計圖 70 4-3.4最佳化預濃縮晶片實驗結果 72 4-3.5最佳化預濃縮晶片實驗誤差探討 73 第五章 結論與未來展望 74 5-1 結論 74 5-2 未來展望 75 參考文獻 76 | |
dc.language.iso | zh-TW | |
dc.title | 預濃縮晶片最佳化之數值模擬與實驗研究與渦旋現象分析 | zh_TW |
dc.title | A Study on Preconcentrator for Chip Optimization and Vortex Phenomena Analysis: Numerical Simulation and Experiment | en |
dc.type | Thesis | |
dc.date.schoolyear | 103-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 吳光鐘(Kuang-Chong Wu),施文彬(Wen-Pin Shih) | |
dc.subject.keyword | 微奈米流道,預濃縮晶片,數值模擬,渦旋,空乏區,離子選擇性通道, | zh_TW |
dc.subject.keyword | Preconcentration chip,Vortex,Depletion Region,Electroosmosis,Electrophoresis,Numerical Simulation, | en |
dc.relation.page | 79 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2015-08-18 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 應用力學研究所 | zh_TW |
顯示於系所單位: | 應用力學研究所 |
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