以嵌入奈米粒子改善五氧化二鉭電橋式記憶體之特性

Abstract

現有記憶體科技將難以滿足未來對於高效能記憶體的需求，在多種發展中的次世代記憶體中，電橋式記憶體擁有達成未來需求的潛力。其作為一種電阻式記憶體，在各式不同的材料組合之中，Ag/Ta2O5/Pt擁有低操作電壓(<0.3 V)、低功耗(<20 μJ 每次寫入-抹除)以及高開關比(10^7)。為了進一步改善其在耐久性和均勻性上的問題，利用直接沉積而非熱退火生成的方法，在Ta2O5記憶層中嵌入一層銀奈米粒子。改善後，寫入電壓能夠降低37%、其標準差也降低了42%、耐久性更提升了100%以上。研究在Ta2O5中嵌入奈米粒子的電橋式記憶體，發現這樣的記憶體有良好的記憶體特性，以及可供未來繼續發展的潛力。

Conductive bridge random access memory (CBRAM), as a kind of resistive random access memory (RRAM), is one of the promising emerging memory technologies to meet the challenges of developing the next-generation high performance semiconductor memory. Among many material combinations, Ag/Ta2O5/Pt has the advantages of low operation voltage (<0.3 V), low power consumption (<20 μJ per cycle), and large on-off ratio (10^7). To improve the endurance and the uniformity issues, the Ag nanoparticles, fabricated by one-step annealing-free deposition, were embedded in the Ta2O5 memory layers. The SET voltage and its standard deviation were reduced by 37% and 42% respectively, and the endurance was increased at least 100%. The nanoparticle-embedded Ta2O5 CBRAM devices were proposed and studied, which have the promising memory characteristics and the potential for the further researches.