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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 李嗣涔(Si-Chen Lee) | |
| dc.contributor.author | Szu-An Lu | en |
| dc.contributor.author | 盧思安 | zh_TW |
| dc.date.accessioned | 2021-06-15T13:34:13Z | - |
| dc.date.available | 2016-03-08 | |
| dc.date.copyright | 2016-03-08 | |
| dc.date.issued | 2016 | |
| dc.date.submitted | 2016-02-01 | |
| dc.identifier.citation | [1] Xie, Y. (2014). Emerging Memory Technologies, Springer.
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/51438 | - |
| dc.description.abstract | 現有記憶體科技將難以滿足未來對於高效能記憶體的需求，在多種發展中的次世代記憶體中，電橋式記憶體擁有達成未來需求的潛力。其作為一種電阻式記憶體，在各式不同的材料組合之中，Ag/Ta2O5/Pt擁有低操作電壓(<0.3 V)、低功耗(<20 μJ 每次寫入-抹除)以及高開關比(10^7)。為了進一步改善其在耐久性和均勻性上的問題，利用直接沉積而非熱退火生成的方法，在Ta2O5記憶層中嵌入一層銀奈米粒子。改善後，寫入電壓能夠降低37%、其標準差也降低了42%、耐久性更提升了100%以上。研究在Ta2O5中嵌入奈米粒子的電橋式記憶體，發現這樣的記憶體有良好的記憶體特性，以及可供未來繼續發展的潛力。 | zh_TW |
| dc.description.abstract | Conductive bridge random access memory (CBRAM), as a kind of resistive random access memory (RRAM), is one of the promising emerging memory technologies to meet the challenges of developing the next-generation high performance semiconductor memory. Among many material combinations, Ag/Ta2O5/Pt has the advantages of low operation voltage (<0.3 V), low power consumption (<20 μJ per cycle), and large on-off ratio (10^7). To improve the endurance and the uniformity issues, the Ag nanoparticles, fabricated by one-step annealing-free deposition, were embedded in the Ta2O5 memory layers. The SET voltage and its standard deviation were reduced by 37% and 42% respectively, and the endurance was increased at least 100%. The nanoparticle-embedded Ta2O5 CBRAM devices were proposed and studied, which have the promising memory characteristics and the potential for the further researches. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-15T13:34:13Z (GMT). No. of bitstreams: 1 ntu-105-R02943173-1.pdf: 11040917 bytes, checksum: 3675a542ff6896f7c48ca66b3abbea40 (MD5) Previous issue date: 2016 | en |
| dc.description.tableofcontents | 中文口試委員審定書 i
誌謝 ii 摘要 iii ABSTRACT iv CONTENTS v LIST OF FIGURES ix LIST OF TABLES xiv Chapter 1 Introduction 1 1.1 Non-Volatile Memory (NVM) 1 1.1.1 Current Difficulties and Challenges for Non-volatile Memories 2 1.1.2 Emerging Memory Technologies 3 1.2 Resistive Random Access Memory (RRAM) 9 1.2.1 Current Achievements and Challenges of RRAM 9 1.2.2 Tantalum Pentoxide Based Conductive Bridge Random Access Memory (CBRAM) 11 1.3 Thesis outline 13 Chapter 2 Operation Principles and Fabrication of CBRAM 14 2.1 Operation Principle of CBRAM 14 2.1.1 Electrochemical Metallization 14 2.1.2 The Geometry and Composition of the Conductive Bridge 20 2.2 Fabrication Techniques 24 2.2.1 Substrate Preparation 24 2.2.2 E-beam Evaporation 25 2.2.3 Thermal Evaporation 25 2.2.4 Radio-Frequency Magnetron Sputtering 26 2.3 Measurement Techniques 29 2.3.1 Ellipsometer 29 2.3.2 Atomic Force Microscope (AFM) 29 2.3.3 X-ray Photoelectron Spectroscopy (XPS) 29 2.3.4 DC Current-Voltage Characteristic Measurements 30 2.3.5 Scanning Electron Microscopy (SEM) 30 2.3.6 Focused Ion Beam (FIB) 31 2.3.7 Transmission Electron Microscopy (TEM) 32 Chapter 3 Optimization and Analyses of Tantalum Pentoxide 33 3.1 Process Temperature Effects 34 3.1.1 Dielectric Strength 35 3.1.2 Surface Roughness 41 3.1.3 Reaction Rate of Silver 45 3.1.4 Fabrication of Flat-stacked Memory Cells 47 3.1.5 Device Measurement 50 3.1.6 Device Performance 54 3.2 Thickness Effects 59 3.2.1 Dielectric Strength 60 3.2.2 Leakage Current 62 3.2.3 Device Performance 64 3.3 Sputtering Gas Effects 69 3.3.1 Deposition Rate 69 3.3.2 Chemical Composition 71 3.3.3 Reaction Rate of Silver 75 3.3.4 Device Performance 77 Chapter 4 Silver Nanoparticle Embedded CBRAM 81 4.1 Comparison between Ta2O5-based CBRAM and RRAM 81 4.2 Fabrication of Nanoparticles Embedded Memory 92 4.2.1 Fabrication Flow 92 4.2.2 Annealing-free Nanoparticle Fabrication Method 95 4.3 Memory Characteristics 100 4.3.1 Optimization of Nanoparticle Embedded CBRAM 101 4.3.2 Improved Properties by the Embedded Nanoparticle 105 Chapter 5 Conclusions 110 References 112 | |
| dc.language.iso | en | |
| dc.subject | 五氧化二鉭 | zh_TW |
| dc.subject | 銀奈米粒子 | zh_TW |
| dc.subject | 五氧化二鉭 | zh_TW |
| dc.subject | 射頻磁控濺鍍 | zh_TW |
| dc.subject | 電阻式記憶體 | zh_TW |
| dc.subject | 射頻磁控濺鍍 | zh_TW |
| dc.subject | 電阻式記憶體 | zh_TW |
| dc.subject | 電橋式記憶體 | zh_TW |
| dc.subject | 銀奈米粒子 | zh_TW |
| dc.subject | 電橋式記憶體 | zh_TW |
| dc.subject | silver nanoparticles | en |
| dc.subject | RF magnetron sputtering | en |
| dc.subject | resistive random access memory (RRAM) | en |
| dc.subject | conductive bridge random access memory (CBRAM) | en |
| dc.subject | silver nanoparticles | en |
| dc.subject | tantalum pentoxide (Ta2O5) | en |
| dc.subject | RF magnetron sputtering | en |
| dc.subject | resistive random access memory (RRAM) | en |
| dc.subject | tantalum pentoxide (Ta2O5) | en |
| dc.subject | conductive bridge random access memory (CBRAM) | en |
| dc.title | 以嵌入奈米粒子改善五氧化二鉭電橋式記憶體之特性 | zh_TW |
| dc.title | Improvement of Ta2O5-Based Conductive Bridge Random Access Memory with Embedded Nanoparticles | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 104-1 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 劉致為(Chee-Wee Liu),林浩雄(Hao-Hsiung Lin),陳敏璋(Miin-Jang Chen) | |
| dc.subject.keyword | 五氧化二鉭,銀奈米粒子,電橋式記憶體,電阻式記憶體,射頻磁控濺鍍, | zh_TW |
| dc.subject.keyword | tantalum pentoxide (Ta2O5),silver nanoparticles,conductive bridge random access memory (CBRAM),resistive random access memory (RRAM),RF magnetron sputtering, | en |
| dc.relation.page | 132 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2016-02-01 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
| 顯示於系所單位： | 電子工程學研究所 | |
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