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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 蔡豐羽 | |
| dc.contributor.author | Ming-Hung Tseng | en |
| dc.contributor.author | 曾銘宏 | zh_TW |
| dc.date.accessioned | 2021-06-15T12:49:15Z | - |
| dc.date.available | 2021-07-26 | |
| dc.date.copyright | 2016-07-26 | |
| dc.date.issued | 2016 | |
| dc.date.submitted | 2016-07-21 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/50622 | - |
| dc.description.abstract | 本研究論文使用原子層沈積技術(ALD)與分子層沈積技術(MLD)製備可撓曲性阻氣薄膜，並藉由調控材料表面形貌、改變氧化劑、與添加有機材料來改善與最佳化薄膜之阻氣效果、撓曲度與可拉伸性，且阻氣效果可達OLED封裝需求(10-6 g m-2 day-1)。
本研究發現可藉由調整製程溫度與薄膜厚度來最佳化薄膜之表面形貌，平坦表面形貌之薄膜不僅氣體阻障效果佳，並可改善奈米複合薄膜之氣體滲透率與可撓曲度。 本研究亦使用強氧化劑（雙氧水）來降低阻氣薄膜製程溫度，又由於雙氧水反應性高，因此薄膜雜質少且品質與阻氣效果較佳，並可在低製程溫度下提昇OLED效率且元件封裝壽命與玻璃封裝具有相同效果。本研究亦開發新穎之MLD材料，並與ALD搭配製備有機－無機複合阻氣薄膜，不僅可提昇阻氣效果，並在經撓曲後與拉伸10%後，仍可達OLED封裝要求。 此外，本研究亦使用去合金法製備具有超高表面積多孔洞金屬銀，搭配使用ALD沈積介電層與導電層作為超級電容。與文獻相比，在最佳化去合金與ALD 製程條件後，元件之電容值可達使用相同介電層材料中最高之電容值。 | zh_TW |
| dc.description.abstract | In this dissertation, we used atomic layer deposition (ALD) and molecular deposition technology (MLD) to fabricate flexible and stretchable gas barrier films, and the gas barrier performances were optimized by regulating surface morphology, changing oxidant, adding organic material, and the WVTR of the optimized gas barrier met the requirement for OLED encapsulation (10-6 g m -2 day-1).
We discovered that adjusting deposition temperature and thickness could optimize the surface morphology. The films with smooth morphology had low gas permeation rate, and improved ability of barrier and flexibility and stretchability of nano-laminated films. The hydrogen peroxide (H2O2) was used to reduce deposition temperature. The gas barrier by using H2O2 had higher films quality and gas barrier. The low deposition temperature not only prevented thermal degradation but also improved the performance of OLED. The ALD encapsulated OLED was comparable with that encapsulated using a thin glass cover. Finally, we optimized the process of dealloying and ALD process. Compared with other supercapacitor with same dielectric material, the supercapacitors by using nanoporous silver had the highest capacitance. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-15T12:49:15Z (GMT). No. of bitstreams: 1 ntu-105-D99527015-1.pdf: 5324269 bytes, checksum: 15e896b4c3eefda2902b1e9af82b7ae5 (MD5) Previous issue date: 2016 | en |
| dc.description.tableofcontents | 摘要 I
ABSTRACT II 致謝………………………………………………...…………………………………………III TABLE OF CONTENTS……………………………………………………………………IV INDEX OF FIGURES……………………………………………………………………....VII INDEX OF TABLES…………………...…………………………………………………...XII CHAPTER 1 INTRODUCTION 1 1.1 Reliability of Soft Electronics 1 1.2 Overview of encapsulation technologies 4 1.3 Overview of supercapacitors 8 1.4 Objectives and Organization of Dissertation 9 CHAPTER 2 BACKGROUND AND LITERATURE REVIEW ON THIN-FILM ENCAPSULATION AND SUPERCAPACITORS 10 2.1 Introduction 10 2.2 Basic Principle of Permeation 10 2.3 The Permeation Mechanism of Water Vapor and Gas 14 2.4 Barrier Performance Measurements 17 2.5 Thin-Film Barrier Technology 23 2.5.1 Single Layer Thin-Film Encapsulation 23 2.5.2 Multilayer Thin-Film Encapsulation 28 2.5.3 Stretchable Thin-Film Encapsulation 33 CHAPTER 3 EXPERIMENTAL METHODS 40 3.1. Thin-Film Fabrication 40 3.1.1. Atomic layer deposition (ALD) 40 3.1.2. Molecular layer deposition (MLD) 43 3.1.3. Nanoporous silver substrate 45 3.2. Thin film characteristics analysis 46 3.2.1. Scanning Emission Microscope (SEM) 46 3.2.2. Quarts Crystal Microbalance (QCM) 46 3.2.3. Elemental Composition Analysis 46 3.2.4. Atomic Force Microscope (AFM) 47 3.3. Barrier Performance Investigation 47 3.4. Device fabrication 50 3.4.1 Organic Light Emitting Diodes Fabrication and Measurement 50 3.4.2 Supercapacitors Fabrication 52 CHAPTER 4 RESULTS AND DISCUSSIONS 54 4.1 The Morphological and Structural Influence on Gas Barrier Performance….……………………………………………………………………….….54 4.2 The Improvement of Gas Barrier Properties at Low Deposition Temperature by Using Hydrogen Peroxide as Oxidant…………………………………………………….……….60 4.2.1 Barrier properties versus deposition temperature for Al2O3, HfO2, and ZnO 61 4.2.2 Nano-laminated Barrier Films of Al2O3/HfO2 (AHO) and Al2O3/ZnO (AZO) 65 4.2.3 Demonstration of OLED Encapsulation 66 4.2.4 The Flexibility of ALD Nano-laminated Gas Barriers 74 4.3 Organic-inorganic Multilayer Gas Barrier by Using ALD and MLD…………………77 4.3.1 Preparation of Polyamide by Molecular Layer Deposition………………………..77 4.3.2 Combination of Atomic Layer Deposition and Molecular Layer Deposition……..85 4.3.3 Gas Barrier Performance of MLD-ALD Multilayers……………………………...86 4.3.4 Stretchable Gas Barriers Prepared by Atomic Layer Deposition………………….90 4.3.4.1 The Structure Effect of HfO2/ PA32 on Their Flexibility and Stretchability…….....…..…..…..…..…..…..…..…..…..…..…..…..…..…..…..…..91 4.4 Fabrication, Optimization and Measurement of Supercapacitors by Using Nanoporous Silver and ALD...........................................................................................................................98 4.4.1 The Fabrication of Nanoporous Ag Structure...........................................................98 4.4.2 The Estimation of Surface Area of Substrate and Capacitance..............................103 4.4.3 The Optimization of Process for Improving Capacitance of Supercapacitor.........104 CHAPTER 5 Conclusions and Future works.................................................................................................109 REFERENCE 110 Appendix................................................................................................................................111 | |
| dc.language.iso | en | |
| dc.title | 以原子層法製備之奈米複合薄膜於應用於可撓可拉伸阻氣，介電層，與導電層之研究 | zh_TW |
| dc.title | Atomic Layer Deposition of Nano-laminated Films for use as Flexible and Stretchable Gas Barrier, Dielectrics, and Conductors | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 104-2 | |
| dc.description.degree | 博士 | |
| dc.contributor.oralexamcommittee | 周卓煇,薛景中,呂志鵬,曹正熙 | |
| dc.subject.keyword | 原子層沉積,薄膜封裝,可撓曲封裝,可拉伸封裝,超級電容, | zh_TW |
| dc.subject.keyword | atomic layer deposition,thin-film encapsulation,flexible encapsulation,stretchable encapsulation,supercapacitor, | en |
| dc.relation.page | 116 | |
| dc.identifier.doi | 10.6342/NTU201601163 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2016-07-21 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
| 顯示於系所單位： | 材料科學與工程學系 | |
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