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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
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dc.contributor.advisor | 李佳翰(Jia-Han Li) | |
dc.contributor.author | Jheng-Guang Wu | en |
dc.contributor.author | 吳政廣 | zh_TW |
dc.date.accessioned | 2021-06-15T11:42:23Z | - |
dc.date.available | 2021-08-25 | |
dc.date.copyright | 2016-08-25 | |
dc.date.issued | 2016 | |
dc.date.submitted | 2016-08-14 | |
dc.identifier.citation | [1] C. Wagner and N. Harned, 'EUV lithography: Lithography gets extreme,' Nature Photonics, vol. 4, pp. 24-26, 2010.
[2] K. Goldberg. (2010). Defect Detection and Inspection Unmasked. Available: https://www.yumpu.com/en/document/view/19592053/defect-detection-and-inspection-unmasked-the-euv-litho-inc [3] T. Pössinger. (2012). R&D actinic blank inspection microscope. Available: http://www.euvlitho.com/2012/S40.pdf [4] K. A. Goldberg, A. Barty, Y. Liu, P. Kearney, Y. Tezuka, T. Terasawa, et al., 'Actinic inspection of extreme ultraviolet programed multilayer defects and cross-comparison measurements,' Journal of Vacuum Science & Technology B, vol. 24, pp. 2824-2828, 2006. [5] Y. S. Kim, J. Park, H. Y. Park, H. Sung, J. Kim, S. B. Lee, et al., 'Actinic EUV Mask Inspection using Coherent EUV Source based on High-order Harmonic Generation,' in Conference on Lasers and Electro-Optics/Pacific Rim, 2015, p. 26F2_4. [6] T. Harada, M. Nakasuji, T. Kimura, T. Watanabe, H. Kinoshita, and Y. Nagata, 'Imaging of extreme-ultraviolet mask patterns using coherent extreme-ultraviolet scatterometry microscope based on coherent diffraction imaging,' Journal of Vacuum Science & Technology B, vol. 29, p. 06F503, 2011. [7] T. Harada, J. Kishimoto, T. Watanabe, H. Kinoshita, and D. G. Lee, 'Mask observation results using a coherent extreme ultraviolet scattering microscope at NewSUBARU,' Journal of Vacuum Science & Technology B, vol. 27, pp. 3203-3207, 2009. [8] T. Harada, M. Nakasuji, T. Kimura, Y. Nagata, T. Watanabe, and H. Kinoshita, 'The coherent EUV scatterometry microscope for actinic mask inspection and metrology,' in Photomask and NGL Mask Technology XVIII, 2011, pp. 80810K-80810K-9. [9] W.-C. Wang, 'Electromagnetic wave theory,' 1986. [10] M. Neisser and S. Wurm, 'ITRS lithography roadmap: 2015 challenges,' Advanced Optical Technologies, vol. 4, pp. 235-240, 2015. [11] J. E. Bjorkholm, 'EUV lithography—the successor to optical lithography,' Intel Technology Journal, vol. 3, p. 98, 1998. [12] R. Fontana, J. Katine, M. Rooks, R. Viswanathan, J. Lille, S. MacDonald, et al., 'E-beam writing: a next-generation lithography approach for thin-film head critical features,' IEEE transactions on magnetics, vol. 38, pp. 95-100, 2002. [13] V. R. Manfrinato, L. Zhang, D. Su, H. Duan, R. G. Hobbs, E. A. Stach, et al., 'Resolution limits of electron-beam lithography toward the atomic scale,' Nano letters, vol. 13, pp. 1555-1558, 2013. [14] V. Y. Banine, K. Koshelev, and G. Swinkels, 'Physical processes in EUV sources for microlithography,' Journal of Physics D: Applied Physics, vol. 44, p. 253001, 2011. [15] A. Tchikoulaeva, H. Miyai, T. Suzuki, K. Takehisa, H. Kusunose, T. Yamane, et al., 'EUV actinic blank inspection: from prototype to production,' in SPIE Advanced Lithography, 2013, pp. 86790I-86790I-6. [16] 楊淳復, '高輝度與高同調性之光罩缺陷繞射檢測系統應用於13.5nm極紫外光微影製程之研究,' 臺灣大學機械工程學研究所學位論文, 2014. [17] L. Bahrenberg, S. Herbert, J. Tempeler, A. Maryasov, O. Hofmann, S. Danylyuk, et al., 'Analysis of distinct scattering of extreme ultraviolet phase and amplitude multilayer defects with an actinic dark-field microscope,' in SPIE Advanced Lithography, 2015, pp. 942229-942229-9. [18] (http://ait.lbl.gov/index.php#about). The SEMATECH Berkeley Actinic Inspection Tool (AIT). [19] K. A. Goldberg, I. Mochi, P. P. Naulleau, H. Han, and S. Huh, 'Benchmarking EUV mask inspection beyond 0.25 NA,' in Photomask Technology, 2008, pp. 71222E-71222E-8. [20] T. Harada, H. Hashimoto, T. Amano, H. Kinoshita, and T. Watanabe, 'Phase imaging results of phase defect using micro coherent EUV scatterometry microscope,' in SPIE Photomask Technology, 2015, pp. 96351E-96351E-7. [21] K. A. Goldberg, A. Barty, P. Seidel, K. Edinger, R. Fettig, P. Kearney, et al., 'EUV and non-EUV inspection of reticle defect repair sites,' in Advanced Lithography, 2007, pp. 65170C-65170C-7. [22] S. Herbert, A. Maryasov, L. Juschkin, R. Lebert, and K. Bergmann, 'Defect inspection with an EUV microscope,' in 26th European Mask and Lithography Conference, 2010, pp. 75450O-75450O-9. [23] H. Kang, S. Hansen, J. van Schoot, and K. van Ingen Schenau, 'EUV simulation extension study for mask shadowing effect and its correction,' in SPIE Advanced Lithography, 2008, pp. 69213I-69213I-11. [24] 陳子揚, '超高真空系統之抽氣測試與應用,' 臺灣大學機械工程學研究所學位論文, pp. 1-75, 2009. [25] 吳怜慧, 李宗諭, 陳志瑋, 楊易晨, 林怡君, 張育彬, et al., '台灣光子源儲存環 14 米彎段鋁真空腔烘烤測試與其超高真空研究,' 真空科技, vol. 27, pp. 15-20, 2014. [26] R. Saffary, R. Nandakumar, D. Spencer, F. T. Robb, J. M. Davila, M. Swartz, et al., 'Microbial survival of space vacuum and extreme ultraviolet irradiation: strain isolation and analysis during a rocket flight,' FEMS microbiology letters, vol. 215, pp. 163-168, 2002. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/49693 | - |
dc.description.abstract | 極紫外光微影技術是新世代微影技術的主流技術。由於半導體技術的演進,製程所需的線寬尺寸越來越小,然而在半導體製程中,光罩是不可或缺的一環,所以任何光罩上若有任一缺陷將可能造成印刷上的錯誤與成本的增加,因此需要一套完善的設備來檢測光罩的缺陷,進而幫助無缺陷的光罩製成。
在此研究中,我們在新竹的國家同步輻射研究中心架設此系統。使用中心的Beamline19A1作為實驗儀器的光源,並於實驗站中安置一個真空腔,在於腔體內設計並架設一套極紫外光光罩缺陷檢射系統,用以檢測光罩上的缺陷,以此套系統為基礎,供於學術界及業界更便利快速的檢測。 | zh_TW |
dc.description.abstract | Extreme ultraviolet lithography (EUV) is one main technology of the new generation lithography. Because of the fast development of integrated circuits, the width dimension required in processing is smaller and smaller. EUV lithography is considered as one of the great methods for the new generation. However, in the process of semiconductors, it will cause the printing errors and increase the costs with any defect in the mask. Therefore, an inspection system of mask defect should be build.
In this study, we try to build the inspection system in National Synchrotron Radiation Research Center in Hsinchu and use the beamline19A1 in that place for this system light source. We design and build an EUV mask inspection in a vacuum chamber at the end-station for providing detection defects in the mask. | en |
dc.description.provenance | Made available in DSpace on 2021-06-15T11:42:23Z (GMT). No. of bitstreams: 1 ntu-105-R03525080-1.pdf: 5239541 bytes, checksum: 5ca98f0ac819a32f8de3a7df20c4ac3e (MD5) Previous issue date: 2016 | en |
dc.description.tableofcontents | 誌謝 i
中文摘要 iii ABSTRACT iv 目錄 v 圖目錄 vii 表目錄 x 第一章 緒論 1 1.1 研究動機 1 1.2 文獻回顧 5 第二章 極紫外光光罩缺陷檢測系統 10 2.1 同調性散射影像顯微鏡 10 2.2 繞射光學 15 第三章 實驗架設 19 3.1 極紫外光光罩檢測系統重要裝置 19 3.2 極紫外光光罩檢測系統架設 20 第四章 光路模擬與控制軟體開發 30 4.1 光路模擬 30 4.2 移動平台的控制開發 49 第五章 結論及未來展望 51 5.1 結論 51 5.2 未來展望 52 參考文獻 53 附錄一 高真空 57 | |
dc.language.iso | zh-TW | |
dc.title | 高同調性光罩缺陷檢測系統應用於極紫外光波段 | zh_TW |
dc.title | High coherence mask defect inspection system applied on
extreme ultraviolet | en |
dc.type | Thesis | |
dc.date.schoolyear | 104-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 李坤彥(Kung-Yen Lee),蔡宛卲(Wan-Shao Tsai),許博淵(Bor-Yuan Shew),蔡坤諭(Kuen-Yu Tsai) | |
dc.subject.keyword | 極紫外光微影,極紫外光光罩,同調散射顯微鏡, | zh_TW |
dc.subject.keyword | coherenet scattering,extreme ultraviolet mask,extreme ultraviolet light, | en |
dc.relation.page | 58 | |
dc.identifier.doi | 10.6342/NTU201602437 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2016-08-15 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 工程科學及海洋工程學研究所 | zh_TW |
顯示於系所單位: | 工程科學及海洋工程學系 |
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