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Title: | K頻帶印刷電路板到低溫共燒陶瓷錫球網格陣列轉接補償
及V頻帶低溫共燒陶瓷到低溫共燒陶瓷覆晶轉接設計 K band PCB-to-LTCC BGA transition compensation and V band LTCC-to-LTCC flip-chip transition design |
Authors: | Chia-Hsien Lin 林佳賢 |
Advisor: | 盧信嘉 |
Keyword: | 覆晶技術,多層介質轉接,準同軸線架構,垂直轉接,錫球網格陣列, flip-chi,multi-layer substrate,quasi-coaxial structure,vertical transition,ball grid array(BGA), |
Publication Year : | 2014 |
Degree: | 碩士 |
Abstract: | 此論文總共分成兩部分:第一部分為錫球網格陣列補償設計,主要為印刷電路板與低溫共燒陶瓷間利用錫球陣列加熱,凝固後將兩板連接,兩板均以微帶線連接錫球,在錫球兩端微帶線設計補償電路,能在傳輸端及接收端達到 及 -20dB或更好的結果頻率為19GHz +/- 1GHz及29GHz +/- 1GHz。第二部分為覆晶轉接配合多層介質內層轉接的設計,此部分為利用準同軸線結構當內層轉接,同時在覆晶轉接也以準同軸線架構黏接,改變傳統的GSG黏接,其利用在40GHz到70GHz的頻帶中,本論文期望能在如此寬頻中達到 及 -10dB或更好,成為能達成各頻帶皆能使用的轉接設計。 This thesis is divided into two parts: firstly, it is about BGA (ball grid array) transition compensation design with hi-low impedance. The connections between PCB and LTCC (low temperature co-fired ceramic) substrate are made by reflow of solder balls. Microstrip line is used in this transition. and can be better than -20dB at 19GHz +/- 1GHz and 29GHz +/- 1GHz. Secondly, we will design the flip-chip transition in multi-layer substrate using quasi-coaxial line as a vertical inner transition. New quasi-coaxial type bumps replace traditional GSG flip-chip bumps are used in the range from 40GHz to 70GHz. It could reach better than 10dB in return loss and be a broadband flip-chip transition. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/4968 |
Fulltext Rights: | 同意授權(全球公開) |
Appears in Collections: | 電信工程學研究所 |
Files in This Item:
File | Size | Format | |
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ntu-103-1.pdf | 4.52 MB | Adobe PDF | View/Open |
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