奈米結構應用於大面積空間電荷限制電晶體以及矽核光纖耦合

Abstract

The market share of organic light emitted diode (OLED) applications in screen fabrication has gradually increased recently. The main reason is because of the properties of self-emitting, low operation voltage, low cost, feasibility at large area fabrication and flexible substrate, which drew attentions of both researchers and industries. The work in this thesis cooperated with the group leading by Prof. Hsin-Fei Meng and Prof. Hsiao-Wen Zan research team from National Chiao Tung University. In our previous works, we were able to fabricate a high performance space-charge-limited transistor (SCLT) with high on-off ratio, low operation voltage, and low leakage current. Our goal is to apply SCLT into a two-transistor one-capacitor (2T1C) circuit with large area. However, it needs to overcome the problems of large area nanoimprint and patterns design for 2T1C circuit. We have established an interference lithography system to fabricate large area nanopatterns in both 1-D and 2-D structure. A designed mask was also used to solve the problems of alignment and edge diffraction. Moreover, the property of nanoimprint lithography has an advantage of uniformity due to the replication of mold. The influence of each process to uniformity will be discussed. The research of anti-reflection structure at silicon cored fiber end face and splicing with commercial silica fiber were also studied due to our own fabrication of SCF. The purpose was to reduce the Fresnel reflection between air and silicon, and to enhance the output power. We think the application can be beneficial to the combination of traditional optical fiber system and integrated optics.