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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 王倫 | |
dc.contributor.author | Yung Tai Sun | en |
dc.contributor.author | 孫永泰 | zh_TW |
dc.date.accessioned | 2021-06-15T11:31:50Z | - |
dc.date.available | 2018-08-24 | |
dc.date.copyright | 2016-08-24 | |
dc.date.issued | 2016 | |
dc.date.submitted | 2016-08-16 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/49503 | - |
dc.description.abstract | The market share of organic light emitted diode (OLED) applications in screen fabrication has gradually increased recently. The main reason is because of the properties of self-emitting, low operation voltage, low cost, feasibility at large area fabrication and flexible substrate, which drew attentions of both researchers and industries.
The work in this thesis cooperated with the group leading by Prof. Hsin-Fei Meng and Prof. Hsiao-Wen Zan research team from National Chiao Tung University. In our previous works, we were able to fabricate a high performance space-charge-limited transistor (SCLT) with high on-off ratio, low operation voltage, and low leakage current. Our goal is to apply SCLT into a two-transistor one-capacitor (2T1C) circuit with large area. However, it needs to overcome the problems of large area nanoimprint and patterns design for 2T1C circuit. We have established an interference lithography system to fabricate large area nanopatterns in both 1-D and 2-D structure. A designed mask was also used to solve the problems of alignment and edge diffraction. Moreover, the property of nanoimprint lithography has an advantage of uniformity due to the replication of mold. The influence of each process to uniformity will be discussed. The research of anti-reflection structure at silicon cored fiber end face and splicing with commercial silica fiber were also studied due to our own fabrication of SCF. The purpose was to reduce the Fresnel reflection between air and silicon, and to enhance the output power. We think the application can be beneficial to the combination of traditional optical fiber system and integrated optics. | en |
dc.description.provenance | Made available in DSpace on 2021-06-15T11:31:50Z (GMT). No. of bitstreams: 1 ntu-105-R02941023-1.pdf: 6267565 bytes, checksum: 4f7c3d4e47ee9d5bf758b0f04853bd4f (MD5) Previous issue date: 2016 | en |
dc.description.tableofcontents | 誌謝 i
中文摘要 ii ABSTRACT iii Statement of Contributions v CONTENTS vi LIST OF FIGURES ix LIST OF TABLES xiv Chapter 1 Motivation and Introduction 1 1-1 Motivation 1 1-2 Space-charge-limited transistors 3 1-3 Silicon cored fiber 7 1-4 Organization of the thesis 9 Chapter 2 Fabrication of Imprinted SCLT 10 2-1 Interference Lithography (IL) 10 2-1-1 Introduction to IL 10 2-1-3 Exposure dose and contrast 14 2-2 Nanoimprint Lithography 19 2-3 Fabrication processes of imprinted SCLT 21 Chapter 3 Formation of Large Area 10x10 cm2 Patterns by Using Interference Lithography 26 3-1 Single exposure stitching 26 3-1-1 Rectangular unit beam 26 3-1-2 DC zone 28 3-1-3 Patterns stitching 31 3-2 Double exposure stitching 33 3-2-1 Rotation error 33 3-2-2 3-D Position alignment by using Moiré pattern 34 3-2-3 Simulation of patterns stitching 37 3-2-4 Stitching design for 2T1C circuit and pattern observation 41 Chapter 4 Large Area SCLT Arrays Fabrication by Using Nanoimprint Lithography 44 4-1 Fabrication and measurement of SCLTs array by colloidal lithography 44 4-2 Fabrication of SCLTs array by nanoimprint lithography 47 4-2-1 Mold fabrication 47 4-2-2 PDMS replication 49 4-2-3 Large area imprint and strip off process 50 4-3 Measurement results 52 4-4 Discussion 58 Chapter 5 Reducing coupling loss between silicon cored fiber and glass fiber 61 5-1 Fabrication of nano structure on silicon wafer 61 5-1-1 KOH solution etching 61 5-1-2 Metal assisted chemical etching 64 5-1-3Measurement of reflectance 66 5-2 Fabrication of porous SCF end face and transmission measurement 71 5-3 Splicing a SCF and a glass fiber 78 Chapter 6 Conclusions and Future Works 81 6-1 Conclusions 81 6-2 Future works 82 References 85 Publication 91 | |
dc.language.iso | en | |
dc.title | 奈米結構應用於大面積空間電荷限制電晶體以及矽核光纖耦合 | zh_TW |
dc.title | Nano structures applied to large area space-charge-limited transistors and silicon cored fiber coupling | en |
dc.type | Thesis | |
dc.date.schoolyear | 104-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 冉曉雯,孟心飛,黃建璋 | |
dc.subject.keyword | 干涉微影,拼接,奈米壓印,空間電荷限制電晶體,矽核光纖,抗反射結構, | zh_TW |
dc.subject.keyword | interference lithography,stitching,nanoimprint,space-charge-limited transistor,silicon cored fiber,anti-reflection structure, | en |
dc.relation.page | 91 | |
dc.identifier.doi | 10.6342/NTU201602959 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2016-08-17 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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