使用互補式金屬傳輸線設計CMOS 10 GHz Doherty 微波功率 放大器之研究

Abstract

這篇論文是關於10 GHz 的Doherty 微波功率放大器之設計利用0.13 微米互補性金屬氧化物半導體製程，即所謂的CMOS 製程，為了改善功率放大器的線性度以及提升放大器的附加功率效率。整個架構包括主要放大器，即所謂之carrier amplifier、輔助放大器，即所謂之peaking amplifier、1:2 功率分配器、輸入與輸出匹配電路等。 除此之外，互補式金屬傳輸線技術被引進在本論文之微波功率放大器設計當中，此技術在本論文所提出之微波功率放大器的設計當中扮演了很重要的角色。特別的是，濃縮式的互補式金屬傳輸線，此為與互補式金屬傳輸線相關的設計，也會在本論文中被討論因為這類型的傳輸線可以擁有很高的特徵阻抗，以及較高的品質因素，比起傳統的互補式金屬傳輸線來說。除此之外，此種新設計更可以節省晶片面積，讓晶片面積可以更有效率的運用。 總而言之，10 GHz 之Doherty 微波功率放大器之設計議題與流程，都將會在此篇論文做介紹與討論。

This thesis deals with the design of 10 GHz Doherty power amplifier implemented on 0.13μm RFCMOS for the linearity improvement and efficiency enhancement. The fully integrated design implements main amplifier, which is so-called carrier amplifier, auxiliary amplifier, which is so-called peaking amplifier, 1:2 power divider, input and output matching networks, and so forth. On top of that, the Complementary-Conducting-Strip Transmission Line is introduced in this thesis, for it plays an important part in the design of power amplifier. Especially, the latest design, Condensed Complementary-Conducting-Strip Transmission Line, which is one of the interested designs of CCS TL, is also introduced in the thesis owing to the fact that it exhibits higher characteristic impedance and higher quality factor than the conventional CCS TL designs. Furthermore, it accomplishes a great deal of size-reduction of IC-chips. To sum up, the design issues and procedures of 10 GHz Doherty power amplifier are discussed throughout this thesis.