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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
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dc.contributor.advisor | 林新智 | |
dc.contributor.author | Tso-Feng Wu | en |
dc.contributor.author | 吳佐峯 | zh_TW |
dc.date.accessioned | 2021-06-15T03:54:57Z | - |
dc.date.available | 2015-07-02 | |
dc.date.copyright | 2010-07-02 | |
dc.date.issued | 2010 | |
dc.date.submitted | 2010-06-28 | |
dc.identifier.citation | 【1】 楊智超,鎂合金材料特性及新製程發展,工業材料,152(1992)72。
【2】 曹龍泉,防電磁波干擾電子資訊產品外殼材料研究,國立台灣大學材料科學與工程研究所博士論文,(1999)。 【3】 黃雨順,冶金熱處理,(1981)354。 【4】 陳錦修,“鎂合金在汽車工業之應用”,工業材料雜誌186期,(2002)148-152。 【5】 陳家暘﹐秋昭奮﹐陳盈志﹐廖芳俊,“鎂鋁鋅系鎂合金銲補製程的探討”, 工業材料雜誌,Vol.174 (2003) 154-155。 【6】 邱六合﹐林信安,“鎂合金腐蝕與表面處理”,工業材料,(2002)118-123。 【7】 M. P. Antony﹐V. D. Tathavadkar﹐C. C. Calvert﹐A. Jha﹐“The soda-ash roasting of chromite ore processing residue for the reclamation of chromium”,Metallurgical and Materials Transactions B:Process Metallurgy and Materials Prucessing Science,V32. n6 (2001)87-95。 【8】 Schmeling,“Method of Producing Protective Coatings That are Resistant to Corrosion and Magnesium and Magnesium Alloy”,United States Patent,4978432 (1990)。 【9】 陳建人等著,“真空技術應用”,行政院國家科學委員會精密儀器發展中心新竹市,(2001)379-387。 【10】 賴明雄,“電子束表面蒸鍍技術”,工業材料,(2002)110-119。 【11】 R. Rodríguez-Clemente, B. Aspar, N. Azema, B. Armas, C. Combescure, J. Durand, A. Figueras, Journal of Crystal Growth 133 (1993) 5。 【12】 R.D. Vispute﹐H. Wu and J. Narayan,“High Quality Epitaxial Aluminum Nitride Layers on Sapphire by Pulsed Laser Deposition”,Appl. Phys. Lett.,,6667(1995)1549-1551。 【13】 S. Tanaka﹐R. Scott Kern﹐J. Bently and R.F. Davis,“Defect Formation During Hetero-Epitaxial Growth of Aluminum Nitride Thin Films on Silicon Carbide by Gas-Source Molecular Beam Epitaxy”,Jpn. J. Appl. Phys,,35(1996)286-288。 【14】 M. T. Wauk and D. K. Winslow,“Vacuum Deposition of AlN Acoustic Transducers”,Appl. Phys. Lett.,286-288,13(1968)。 【15】 F. C. Stedile﹐J. R. Baumvol﹐W. H. Schreiner and F. L. Freire,“Study on Direct Current Reactive Sputtering Deposition of Aluminum Nitride Thin Film”,J. Vac. Sci. Technol.,A10(1992)3272-3277。 【16】 M. Penza﹐M. F. De Riccardis﹐L. Mirenghi﹐M. A. Tagliente and E. Verona,“Low Temperature Growth of r.f. Reactively Plannar Magnetron-Sputtered AlN Films”,Thin Solid Films,,259(1993)154-162。 【17】 J. Yang﹐C. Wang﹐X. Yan﹐K. Tao﹐B. Liu and Y. Fan,“Polycrystalline AlN films of Fine Crystallinity Prepared by Ion-Beam Assisted Deposition”,Appl. Phys. Lett.,,62(1993)2790-2791。 【18】 S. Kudela﹐“Int. J. of Materials & Product Technolohgy”,18(2003)91-115。 【19】 S. Kamado and Y. Kokima,“Metallurgical Science and Technoligy”,16(1996)45-54。 【20】 楊錦章,“基礎濺鍍電漿”,電子發展月刊,68期,(72)13-40。 【21】 J. Sellers,“Surface and Coating Technology”,98(1998)1245-1250。 【22】 H. Altun, S. Sen,“Surf. Coat. Technol. ”197 (2005) 193。 【23】 葉國良,“氮化鈦氮化鋁多層膜之磨潤性能研究”,2003。 【24】 宋健民,“以物理氣相沉積(PVD)鍍類似鑽石碳膜(DLC)”,工業材料148期,183-190。 【25】 D.S Rickerby and A. Matthews.,“Advanced Surface Coatings”,Chapman and Hall,New York,(1991)21。 【26】 S. M. Rossnagel et al.,“Handbook of Plasma Processing Technology”,Noyes Publication,Park Ridge,New Jersey,U.S.A 1989。 【27】 I. Safi,“Recent aspects concerning DC reactive magnetron sputtering of thin films : a review”,Surface and Coating Technology,127 (2000) 203-219。 【28】 莊達人,“VLSI製造技術”,高立圖書有限公司,(2000)148。 【29】 楊哲勛,“射頻磁控濺鍍氧化鎳製程條件對顯微結構與電性及光性之研究”,國立成功大學材料及工程學系碩士論文,(2001)。 【30】 Le Paven-Thivet﹐C. M.alibert﹐Ph. Houdy﹐P. A. Albouy,“R.F. sputtering of Al/Al2O3 multilayers”,Thin Solid Films,v336 (1998) 373-376。 【31】 B.A. Movchan and A.V. Demchishin,Phys. Met. Metallogr.,28(1969)83-90。 【32】 J.A. Thornton﹐J.Vac.sci.Technol.,11(1974)666-670。 【33】 戴光勇,“鎂合金表面處理技術(上)”,材料與社會,24 期,1988, pp. 57。 【34】 P. Curie and J. Curie﹐Bull. Soc. Min. de Frace﹐3﹐p.90﹐1880。 【35】 A. Langevin,“Press Unicersitaires de France”,Paris(1942)。 【36】 M. Doubois and P. Muralt. Journal Of Applied Physics Volume 89﹐Number11 1 June 2001。 【37】 顏豐明,“高熱傳導率氮化鋁基板材料之簡介”,材料與社會,73 (1996) p45-46。 【38】 林宗賢,“以射頻磁控溅鍍Al-Mn薄膜於鎂鋰合金表面之抗腐蝕研究”,2004。 【39】 Brian Chapman,in:Glow Discharge Process,chap.3,John Wiley and Sons, (1980)。 【40】 R.B. Stokes and J.D. Crawford,“X-band thin film acoustic filters on GaAs” ,Microwave Theory and Techniques﹐IEEE Transactions on,vol.41,(1993) 1075-1080。 【41】 NT-MDT solver p.47 Instruction Manual(NT-MDT Co, Moscow, Russia, 2002。 【42】 莊東漢,“材料破損分析”,五南圖書出版公司,民國九十七年。 【43】 Denny A. Jones,“Principles and prevention of corrosion”,Second Edition Simon & Schuster/A Viacom Company (1996)。 【44】 Da Chen, Dong Xu , Jingjing Wang,“Influence of the texture on Raman and X-ray diffraction characteristics of polycrystalline AlN films”,Thin Solid Films 517,(2008) 986-989。 【45】 S. PalDey, S.C. Deevi, Mater. Sci. Eng. A 342 (2003) 58。 【46】 Y.Q. Wang, M.Y. Zheng, K. Wu, Mater. Lett. 59 (2005) 1727-1731。 【47】 Si-Hyung Lee﹐Ki Hyun Yoon﹐Deok-Soo Cheong,“Relationship between residual stress and structure properties of AlN films deposited by r.f. reactive sputtering”,Thin Solid Films 435,(2003) 193-198。 【48】 Verein Deutscher Ingenieure,Richtlinie,(1992)3198-3199。 【49】 W. Heinke﹐A. Leyland﹐A. Mattehew﹐G. Berg﹐C. Friedrich﹐E. Broszeit,“Evalution of PVD nitride coatings﹐using impact﹐scratch and Rockwell-C adhesion tests”,Thin Solid Film,270(1995)431-438。 【50】 K. Sugiyama, K. Taniguchi and K. Kuwabara, J. Mater. Sci. Let, 9 (1990) 489。 【51】 C.T.Huang, J.G.Duh,“Deposition of AlN films onto Fe-Al-Mn,alloys by reactive r.f. magnetron sputtering”, Surface and Coatings Technology ,56 (1992) 51-59。 【52】 H.Cheng, Y.Sun, J.X.Zhang,“AlN films deposited under various nitrogen concentrations by RF reactive sputtering”, Journal of Crystal Growth ,254 (2003) 46-54。 【53】 V. Brien, P. Miska, B. Bolle,“Columnar growth of AlN by r.f. magnetron sputtering : Role of {1013} plane”,journal of crystal growth 307,(2007) ,245-252。 【54】 R. Hübler,“Ion beam mixing of Al-AIN multilayers for tribological and corrosion protection”,Nuclear Instruments and Methods in Physics Research B80/81,pp1415-1418,1993。 【55】 J.L. Vossen and W. Kern,“Thin Film Process Ⅱ Academic Press”,New York,1991。 【56】 G.C. Stutzin﹐K. Rozsa﹐and A. Gallagher﹐“J. Vac”,ScI. Technol. A11,647,1993。 【57】 Hovsepian PE, Lewis DB, Mujinz WD, Lyon SB, Tomlinson M.,“Combined cathodic arc/unbalanced magnetron grown CrN/NbN superlattice coatings for corrosion resistant applications. ”,Surf Coat Technol ,(1999),120–121:535–41。 【58】 Jeong Hoon Lee, Won Mok Kim,Teak Sung Lee,“Mechanical and adhesion properties of Al/AlN multilayered thin film”,Surface and Coatings Technology ,133-134 (2000) 220-226 。 【59】 C. D. Wagner﹐W. M. Riggs﹐L. E. Davis﹐J. F. Moulder﹐G. E. muilenberg(Editor),“Handbook of X-ray Photoelectron Spectroscopy”,Eden Prairie﹐Minn﹐Physical Electronic﹐(1995)。 【60】 D. Briggs and M. P. Seah﹐“Practical Surface Analysis”,Chichester﹐Wiley﹐c1990-c1992﹐New York。 【61】 John F. Moulder﹐Jill Chastain﹐Roger C. King“Handbook of X-ray Photoelectron Spectroscopy:a reerence book of standard spectra for identification and interpretation of XPS data”,Eden Prairie﹐Minn﹐Physical Electronic﹐(1995)。 【62】 W. Osterle﹐I. Dorfel﹐I. Urban,“XPS and XTEM study of AlN formation by N2+ implantation of aluminium”,Surface and Coatings Technology 102,(1998) 168-174。 | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/44788 | - |
dc.description.abstract | 本實驗中採用近幾年來廣泛應用於運輸工具及3C產品之鎂鋰合金(LZ101)當做基材,其中Li所添加的量多達10%。而當鎂合金中在添加多達5~11%的鋰含量時,在結構中會存在著富含鎂的α-hcp及富含鋰的β-bcc之雙相結構。由於α及β雙相結構的因素,此時鎂合金具有良好的成形性以及低密度特性。但加入活性較大鋰原子的緣故,使得腐蝕行為更為加劇,故使用鎂鋰合金時,更須要有更好的表面處理方法來解決其較差的抗蝕性質。
本研究中將於鎂鋰合金基板上濺鍍氮化鋁薄膜,探討改變不同之濺鍍參數,如射頻功率50W ~ 200W、工作壓力1mtorr ~ 5mtorr、反應氣體氮氣流量5 s.c.c.m ~ 15 s.c.c.m、工作距離5cm、14cm等,其對薄膜性質之影響。或利用雙層鋁/氮化鋁薄膜層之沉積方法,來測試鎂鋰合金表面之抗腐蝕能力。利用XRD、SEM、XPS、TEM、恆電位儀、鹽霧試驗等儀器分別觀察其鍍膜層晶體結構、表面形貌、成份分佈、結晶結構、抗腐蝕能力等。而經過氮化鋁鍍膜處理試片,使用X-ray繞射儀與穿透式電子顯微鏡來判別其鍍膜層之結晶結構。利用EPMA定量檢測,量測鍍膜層上之成份含量。並且分別採用場發射槍掃描式電子顯微鏡以及原子力顯微鏡觀察鍍膜層之表面形貌與薄膜表面粗糙度。另外於鹽霧試驗以及恆電位儀測量經氮化鋁薄膜處理過後之鎂鋰合金試片,其抗腐蝕能力。最後運用X光光電子能譜中束縛能之位移來定出其薄膜層組成成份。 濺鍍過程中,當射頻功率上升、工作壓力與氮氣流量降低時,氮化鋁薄膜層厚度會明顯增加。射頻功率參數調高時,從靶材表面上濺擊出之原子擁有更大之動能。且工作壓力會影響濺擊原子之平均自由路徑,在工作壓力愈小環境下,平均自由路徑愈長,原子抵達基材表面上時動能愈不易散失。除了射頻功率與工作壓力外,氮氣氣體流量也是影響薄膜因素之一,當流量值愈大時,N2離子相對於Ar離子其濺鍍率明顯緩慢,導致沉積速率降低。若在長工作距離下濺鍍,濺射原子較易散亂排列,薄膜層表現出非結晶結構。若減短工作距離後,濺射原子將擁有較大之動能,而氮化鋁薄膜將形成柱狀晶結構,在(002)面之從優取向進行成核成長。最後發現氮化鋁薄膜層中若存在著許多小缺陷以及太大的殘留應力時,會使氮化鋁薄膜不具有抗蝕佳之特性,且易使腐蝕反應加速。 另外於鎂鋰合金基板上濺鍍氮化鋁/鋁雙層薄膜,並採用150W射頻功率、1mtorr工作壓力、10s.c.c.m氬氣流量、14公分工作距離等參數下,濺鍍鋁薄膜層於鎂鋰合金基板與氮化鋁薄膜層間。在腐蝕測試後,氮化鋁/鋁雙層薄膜比只有單一氮化鋁薄膜層擁有更佳之抗腐蝕能力。因為鋁鍍膜層表現出質地較軟之特性,使其在腐蝕環境中,應力腐蝕現象較不顯著。並且鋁薄膜層位於氮化鋁薄膜層與基材間,將扮演良好附著力的角色於其內。故能防止較脆的氮化鋁薄膜層,其腐蝕裂縫擴張等效應。 | zh_TW |
dc.description.abstract | In this experience we use Magnesium alloys that are considered as the potential candidates for many applications in transportation vehicles and 3C product as substrate. It is known that the Mg-Li alloys with Li contents ranging from 5 to 11mass% will exhibit a two-phase structure of Mg-rich (α-hcp) and Li-rich (β-bcc) phases. This two-phase structure has excellent formability and extra-low density. But the Mg-Li alloys still have disadvantage of poor corrosion and wear resistance. These poor properties limit the application of Mg-Li alloys and need to be resolved effectively.
In this study, the aluminum nitride (AlN) films were deposited by R.F. magnetron sputtering method on Mg-Li substrate under different sputtering power of 50W~200W、working pressure of 5×10-3torr~1×10-3torr、nitrogen flow of 5s.c.c.m ~15s.c.c.m and working distance of 14cm and 5cm. Crystal orientation was studied by X-ray diffraction and transmission electron microscopy. The composition and concentration of aluminum and nitrogen were observed by EPMA. Surface morphology and Rms roughness were examined respectively by SEM and AFM. Corrosion resistance was measured by potentio-dynamic polarization and salt-spray techniques. And chemical shift of electron binding energy was observed by XPS. As the sputtering power increased, the working pressure and nitrogen flow decreased. The thin film thickness was changed to be thicker. When the sputtering power value increased, the sputtered atoms from the target will gain more momentum. The working pressure will affect the mean free path of atoms. At lower working pressure , the particles had a longer mean free path ,and so had higher kinetic energy when they arrived at the substrate surface. In addition to sputtering power and working pressure effect, when nitrogen flow increased, the sputtering yield of N2+ will be lower compared to Ar+. It is also a important factor resulting in decreasing of the deposition rate. And it was found that, when deposited at longer working distance , the AlN films tended to be randomly orientated. With decreasing working distance , the sputtered atom will get more mobility on substrate. After deposited at short distance, the AlN films are showed c-axis (002) preferred orientation. However, they were found that the AlN films exhibited small structure defect and high residual stress, may improve the corrosion speed. AlN/Al dual protective coating were prepared on Mg-Li substrate, and the Al interlayer was deposited by R.F. magnetron sputtering method at sputtering power of 150W、working pressure of 1×10-3torr、argon flow of 10s.c.c.m、working distance of 14cm. Comparing with AlN coating, AlN/Al coating have better corrosion resistance, because Al coating exhibit soft properties and reduce the stress-corrosion cracking in an aggressive environment. Furthermore, Al coating can let AlN coating and Mg-Li substrate combine well and prevent the propagation of the crack generated in a brittle ceramic layer. | en |
dc.description.provenance | Made available in DSpace on 2021-06-15T03:54:57Z (GMT). No. of bitstreams: 1 ntu-99-R97527051-1.pdf: 5556960 bytes, checksum: a557b72d150923dca56474b35fc31e27 (MD5) Previous issue date: 2010 | en |
dc.description.tableofcontents | 目 錄 頁數
口試委員審定書 --------------------------------------------------------------------- Ⅰ 致謝 ------------------------------------------------------------------------------------ Ⅱ 中文摘要 ----------------------------------------------------------------------------- Ⅲ 英文摘要 ----------------------------------------------------------------------------- Ⅴ 目錄 ---------------------------------------------------------------------------------- Ⅶ 表目錄 -------------------------------------------------------------------------------- Ⅹ 圖目錄 ------------------------------------------------------------------------------- ⅩⅠ 第一章 緒論 1-1 前言 -------------------------------------------------------------------------------- 1 1-2 研究動機與目的 ----------------------------------------------------------------- 3 第二章 理論基礎 2-1 濺鍍原理 --------------------------------------------------------------------------- 6 2-2 電漿 --------------------------------------------------------------------------------- 7 2-3 輝光放電 --------------------------------------------------------------------------- 8 2-4 濺鍍裝置 --------------------------------------------------------------------------- 9 2-5 薄膜成長機制 -------------------------------------------------------------------- 11 2-6 薄膜沉積原理 -------------------------------------------------------------------- 12 2-7 基板溫度及氣壓對薄膜結構之影響 ----------------------------------------- 13 2-8 鎂合金的種類與表示方法 ----------------------------------------------------- 14 2-9 氮化鋁(AlN)結構及特性 ------------------------------------------------------- 14 第三章 實驗設備與方法 3-1 實驗流程 -------------------------------------------------------------------------- 27 3-2 濺鍍程序與濺鍍系統 ----------------------------------------------------------- 28 3-3 X光繞射(X-ray diffraction)分析 ------------------------------------------------ 29 3-4 場發射槍掃描式電子顯微鏡分析 -------------------------------------------- 31 3-5 穿透式電子顯微鏡分析 -------------------------------------------------------- 31 3-6 原子力顯微鏡分析 -------------------------------------------------------------- 32 3-7 X光光電子能譜 ------------------------------------------------------------------ 33 3-8 電化學測試法 -------------------------------------------------------------------- 34 3-9 鹽霧試驗測試 -------------------------------------------------------------------- 36 第四章 結果與討論 4-1 射頻功率之影響 4-1-1 XRD分析 -------------------------------------------------------------- 47 4-1-2 SEM分析 -------------------------------------------------------------- 48 4-1-3 Cross Section分析 ---------------------------------------------------- 49 4-1-4 恆電位儀量測 --------------------------------------------------------- 49 4-2 工作壓力之影響 4-2-1 XRD分析 -------------------------------------------------------------- 51 4-2-2 SEM分析 -------------------------------------------------------------- 51 4-2-3 Cross Section分析 ---------------------------------------------------- 52 4-2-4 壓痕試驗 --------------------------------------------------------------- 53 4-5-5 恆電位儀量測 --------------------------------------------------------- 53 4-3 氣體流量之影響 4-3-1 XRD分析 -------------------------------------------------------------- 55 4-3-2 EPMA & SEM分析 -------------------------------------------------- 55 4-3-3 Cross Section & SEM分析 ------------------------------------------ 56 4-3-4 AFM分析 -------------------------------------------------------------- 56 4-4 工作距離之影響 -------------------------------------------------------------- 57 4-5 Al / AlN 雙層薄膜 4-5-1 XRD分析 ------------------------------------------------------------- 59 4-5-2 Cross Section & SEM分析 ----------------------------------------- 59 4-5-3 鹽霧試驗 ---------------------------------------------------------------- 60 4-5-4 鹽霧試驗SEM分析 -------------------------------------------------- 61 4-5-5 恆電位儀量測 ---------------------------------------------------------- 61 4-5-6 改變沉積時間之影響 ------------------------------------------------- 62 4-6 TEM分析 ------------------------------------------------------------------------ 62 4-7 XPS成份分析 ------------------------------------------------------------------- 65 第五章 結論 -------------------------------------------------- 103 參考文獻 --------------------------------------------------------------------------- 106 | |
dc.language.iso | zh-TW | |
dc.title | R.F.射頻磁控濺鍍氮化鋁薄膜於鎂鋰合金之抗腐蝕性質研究 | zh_TW |
dc.title | The corrosion resistance of AlN thin film deposited on Mg-Li alloy by Radio Frequency Magnetron Sputtering Technique | en |
dc.type | Thesis | |
dc.date.schoolyear | 98-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 許正勳,葉明堂 | |
dc.subject.keyword | 鎂鋰合金,氮化鋁薄膜,抗腐蝕性質,R.F.射頻磁控濺鍍,雙層氮化鋁/鋁薄膜, | zh_TW |
dc.subject.keyword | Mg-Li alloy,AlN thin film,corrosion resistance property,r.f. magnetron sputtering,AlN/Al dual thin film, | en |
dc.relation.page | 110 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2010-06-28 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
顯示於系所單位: | 材料科學與工程學系 |
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