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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 林坤佑(Kun-You Lin) | |
dc.contributor.author | Jhih-Yu Huang | en |
dc.contributor.author | 黃智宇 | zh_TW |
dc.date.accessioned | 2021-06-14T17:13:46Z | - |
dc.date.available | 2009-07-30 | |
dc.date.copyright | 2008-07-30 | |
dc.date.issued | 2008 | |
dc.date.submitted | 2008-07-25 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/41047 | - |
dc.description.abstract | 在微波與毫米波頻段,高頻的振盪信號是不容易實現的,其相位雜音和可調範圍往往都會受限於寄生效應,因此藉由設計一個低頻的壓控振盪器串接倍頻器的方式,可以提高設計振盪器的彈性且也會有較好的相位雜音。而近年來因半導體製程的研發與進步,產生了相當多由主動式元件組成的倍頻器架構,因此利用主動元件去設計特性好的二倍頻器,是一個相當值得探討的主題。
本論文的主題在於利用0.18微米互補式金氧半導體製程和0.35微米矽鍺互補金屬氧化半導體製程設計,設計出寬頻且特性良好的二倍頻器。論文主要可以分成兩大部分,第一部份介紹二倍頻器的功能,基本設計原理和設計架構考量。第二部份討論寬頻分佈式倍頻器的原理,本論文提出三個寬頻的分佈式二倍頻器,並說明其架構及設計的原理。第一個電路使用台積電0.18微米互補式金氧半導體製程,成功的實現一個輸出頻率為14至24 GHz 的寬頻分佈式二倍頻器。第二個電路也是使用台積電0.18微米互補式金氧半導體製程,為了去降低其所需的輸入功率、較好的轉換損耗和較好的基頻抑制,成功的實現一個18~26 GHz的電流再利用分佈式二倍頻器。最後一個電路是利用台積電0.35微米矽鍺互補金屬氧化半導體去設計一個平衡分佈式倍頻器,此架構平衡式二倍頻器有寬頻的基頻抑制效果,不需要額外的濾波器去抑制基頻信號。又因為被動的平衡不平衡轉換器需要較多的輸入功率,因此實現一個4~20 GHz使用主動平衡不平衡轉換器的平衡分佈式二倍頻器。 | zh_TW |
dc.description.provenance | Made available in DSpace on 2021-06-14T17:13:46Z (GMT). No. of bitstreams: 1 ntu-97-R95942073-1.pdf: 1399115 bytes, checksum: 491d5d364a6992bb5359443a35d81c83 (MD5) Previous issue date: 2008 | en |
dc.description.tableofcontents | 口試委員會審定書 #
誌謝 i 中文摘要 iii ABSTRACT v CONTENTS vii LIST OF FIGURES x LIST OF TABLES xv Chapter 1 Introduction 1 1.1 Background and Motivation 1 1.2 Literature Survey 1 1.3 Contribution 4 1.4 Chapter Outlines 6 Chapter 2 General Background of Doubler 8 2.1 Background and Motivation 8 2.2 Performance Parameters of Doubler 9 2.3 Passive Frequency doublers 11 2.4 Active Frequency doublers 15 Chapter 3 Design of a CMOS Distributed Doubler with High-pass Filter 19 3.1 Overview 19 3.1.1 Distributed Amplifier 19 3.1.2 Distributed Doubler 22 3.2 Design of Distributed Doubler with High-pass Filter 23 3.2.1 Foundry description 23 3.2.2 Design Flow of Design of Distributed Doubler with High-pass Filter 23 3.2.3 Measurement Results 35 3.2.4 Performance Summary 39 3.3 Discussions and Conclusion 40 Chapter 4 Design of Distributed Doubler with Current-reuse Circuit 41 4.1 Doubler with Current-reuse Topology 41 4.2 Design of Distributed Doubler with Current-reuse Circuit 43 4.2.1 Design Flow of Design of Distributed Doubler with Current-reuse Circuit Design Topology 43 4.2.2 Measurement Results 52 4.2.3 Performance Summary 56 4.3 Discussions and Conclusion 58 Chapter 5 Design of a Broadband Balanced Distributed Frequency Doubler with a Sharing Collector Line 59 5.1 Microwave/Millimeter-Wave Balun 59 5.1.1 Lumped Element Baluns 60 5.1.2 Marchand Baluns 60 5.1.3 Active Balun 61 5.2 Balanced Distributed Doubler 64 5.3 Design of a Broadband Balanced Distributed Frequency Doubler with a Sharing Collector Line 66 5.3.1 Foundry description 66 5.3.2 Design Flow of Distributed Doubler with Active Balun 67 5.3.3 Measurement Results 77 5.3.4 Performance Summary 81 Chapter 6 Conclusion 84 References 86 | |
dc.language.iso | en | |
dc.title | 應用於微波與毫米波倍頻器之研製 | zh_TW |
dc.title | Design of Doubler for Microwave and Millimeter-wave Applications | en |
dc.type | Thesis | |
dc.date.schoolyear | 96-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 王暉(Huei-Wang),黃天偉(Tian-Wei Huang),張鴻埜(Hong-Yeh Chang),陳咨吰 | |
dc.subject.keyword | 微波,毫米波,倍頻器,微波單晶積體電路, | zh_TW |
dc.subject.keyword | Microwave,Millimeter-wave,doubler,MMIC, | en |
dc.relation.page | 88 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2008-07-28 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電信工程學研究所 | zh_TW |
顯示於系所單位: | 電信工程學研究所 |
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