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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 楊哲人 | |
dc.contributor.author | Shih-Yao Huang | en |
dc.contributor.author | 黃世耀 | zh_TW |
dc.date.accessioned | 2021-06-14T17:07:28Z | - |
dc.date.available | 2013-07-30 | |
dc.date.copyright | 2008-07-30 | |
dc.date.issued | 2008 | |
dc.date.submitted | 2008-07-29 | |
dc.identifier.citation | [1] W. L. Zhou, F. Namavar, P. C. Colter, M. Yoganathan, M. W. Leksono and J. I. Pankove, J. Mater. Res. Vol.14 (1999) p.4
[2] S. Nakamura, Science Vol.281 (1998) p.956 [3] W. Van Der Stricht, I. Moerman, P. Demeester, J. A. Crawley and E. J. Thrush, J. Cryst. Growth Vol.170 (1997) p.344 [4] 宋健民,超硬材料,全華圖書,台北市,民國89年 [5] J. Karpinski, J. Jun, and S. Porowski, J. Cryst. Growth Vol.66 (1984) p.1 [6] S. Yoshida and S. Gonda, Appl. Phy. Lett. Vol.42 (1983) p.427 [7] H. Amano, T. Asahi and I. Akasaki, Jpn. J. Appl. Phys. Vol.29 (1990) L205 [8] S. Nakamura, Jpn. J. Appl. Phys. Vol.30 (1991) L1705 [9] K. Uchida, K. Nishida, M. Kondo and H. Munekata, J. Cryst. Growth Vol.189/190 (1998) p.270 [10] B. Beaumont, P. Gibart, J. P. Faurie, J. Cryst. Growth Vol.156 (1995) p.140 [11] Wook Kim, Ö. Aktas, A. E. Botchkarev, A. Salvador, S. N. Mohammad, and H. Morkoç, J. Appl. Phys. Vol.79 (1996) p.7657 [12] 余樹楨,晶體之結構與性質,國立編譯館,台北市,民國78年 [13] I. Aksaki, J. Cryst. Growth Vol.198/199 (1999) p.885 [14] X. H. Wu, P. Fini, E. J. Tarsa, B. Heying, S. Keller, U. K. Mishra, S. P. DenBaars and J. S. Speck, J. Cryst. Growth Vol.189/190 (1998) p.231 [15] L. Sugiura, J. Appl. Phys. Vol.81 (1997) p.1633 [16] X. H. Wu, L. M. Brown, D. Kapolnek, S. Keller, B. Keller, S. P. DenBaars and J. S. Speck, J. Appl. Phys. Vol.80 (1996) p.3228 [17] N. G. Weimann and L. F. Eastman, J. Appl. Phys. Vol.83 (1998) p.3656 [18] N. E. Lee, R. C. Powell, Y. W. Kim, and J. E. Greene, J. Vac. Sci. Technol., A Vol.13 (1995) p.2293 [19] John E. Northrup, Jörg Neugebauer, and L. T. Romano, Phys. Rev. Lett. Vol.77 (1996) p.103 [20] L. T. Romano, J. E. Northrup and M. A. O’Keefe, Appl. Phys. Lett. Vol.69 (1996) p.2394 [21] B. Daudin, J. L. Rouvie` re, and M. Arlery, Appl. Phys. Lett. Vol.69 (1996) p.2480 [22] W. Qian, M. Skowronski, M. De Graef, K. Doverspike, L. B. Rowland and D. K. Gaskill, Appl. Phys. Lett. Vol.66 (1995) p.1252 [23] A. N. Bright, N. Sharma and C. J. Humphreys, J. Electron Microsc. Vol.50(6) (1998) p.489 [24] H. M. Ng, D. Doppalapudi and T. D. Moustakas, Appl. Phys. Lett. Vol.73 (1998) p.821 [25] N. G. Weimann and L. F. Eastman, J. Appl. Phys. Vol.83 (1998) p.3656 [26] N. Kuroda, C. Sasaoka, A. Kimura, A. Usui, and Y. Mochizuki, J. Cryst. Growth Vol.189/190 (1998) p.551 [27] C. Sasaoka, H. Sunakawa, A. Kimura, M. Nido, A. Usui, and A. Sakai, J. Cryst. Growth Vol.189/190 (1998) p.61 [28] X.H. Wu, C.R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett. Vol.72 (1998) p.692 [29] H. K. Cho, J. Y. Lee, G. M. Yang, and C. S. Kim, Appl. Phys. Lett. Vol.79 (2001) p.215 [30] C. J. Sun M. Zubair Anwar, Q. Chen, J. W. Yang, M. Asif Khan, M. S. Shur, A. D. Bykhovski, Z. Liliental-Weber, C. Kisielowski, M. Smith, J. Y. Lin, and H. X. Xiang, Appl. Phys. Lett. Vol.70 (1997) p.2978 [31] 陳培麗,『鑽石及類鑽膜簡介』,科儀新知,第2期,82-91頁,民國80年10月 [32] Michael Shur, “Physics of semiconductor Devices”, Prentice-Hall, 1990 [33] Y. Gurbuz, W. P. Davidson, and D. V. Kerns, Diamond Relat. Mater.,Vol.7 (1998) p.1723 [34] R. D. McKeag and R. B. Jackman, Diamond Relat. Mater.,Vol.7 (1998) p.513 [35] M. Kamo, Y. Sato, S. Matsumoto and N. Setaka, J. Cryst. Growth Vol.62 (1983) p.642 [36] S. Matsumoto, J. Mater. Sci. Letter., Vol.4 (1985) p.600 [37] S. Nakao, M. Noda and H. Watatani, Jpn. J. Appl. Phys., Vol.30 (1991) L45 [38] J. Beason and R. B. Paterson, Proceeding of the 1981 Houston conference on High-Temperature Electronics and Instrumentation (IEEE), New York, (1981) p.101 [39] M. W. Geis, D. D. Rathman, D. J. Eerlish, R. A. Murphy, and W.T. Lindly, IEEE Device Lett. EDL8 (1987) p.341 [40] H. Liu and D. S. Dandy, “Diamond Chemical Vapor Deposition: Nucleation and Early Growth Stages”, Noyes Publications, New Jersey, U.S.A. (1995) [41] 宋長泰,以聚碳矽烷高溫分解形成之碳化矽薄膜及其應用於鑽石成長緩衝層之研究,國立台灣科技大學,民國92年 [42] R. F. Davis, “Diamond Films and Coatings Development, Properties, and Applications”, Noyes Publications, Park Ridge, New Jersey, (1992) [43] H. E. Thomas, “Handbook of microwave techniques and equipment”, Englewood Cliffs, N. J., Prentice-Hall, (1972) [44] A. Lettington and J. W. Steeds, “Thin Film Diamond”, Chapman & Hall for the Royal Society, London, (1994) [45] B. V. Derjaguin and D. V. Fedoseev, Sci. Ameri., Vol.233 (1975) p.102 [46] S. Matsumoto and Y. Matsui, J. Mater. Sci., Vol.18 (1983) p.1785 [47] A. R. Badzian and T. Badzian, Surf. Coat. Technol., Vol.36 (1988) p.283 [48] H. Kawarada and T. Suesada, Appl. Phys. Lett., Vol.66 (1995) p.30 [49] M. M. Waite and S. L. Shah, Appl. Phys. Lett., Vol.60 (1992) p.2344 [50] R. Michau, M. S. Wong, K. C. Sheng, Appl. Phys. Lett., Vol.54 (1989) p.2204 [51] R. Haubner, A. Lindlbauer and B. Lux, Int. J. Refract. Met. Hard Mater, Vol.14 (1996) p.119 [52] C. M. Sung, M. F. Tai, Int. J. Refract. Met. Hard Mater, Vol.15 (1997) p.237 [53] W. A. Yarbrough and R. Messier, Science, Vol.247 (1990) p.688 [54] W. A. Yarbrough, J. Vac. Sci. Technol. A, Vol.39 (1991) p.1145 [55] J. F. Parins, Diamond Relat. Mater.,Vol.2 (1993) p.646 [56] A. Badrezj and T. Badrezj, Diamond Relat. Mater.,Vol.2 (1993) p.147 [57] J. P. Vitton, J. J. Garenne and S. Truchet, Diamond Relat. Mater.,Vol.2 (1993) p.713 [58] M. I. Landstrass, M. A. Plano, M. A. Moreno, S. Mcwilliams, L. S. Pan, D. R. Kania and S. Han, Diamond Relat. Mater.,Vol.2 (1993) p.1033 [59] C. Lai, J. B. Wachtman, G. H. Sigel, P. Lu, F. C. Cosandey, G. Rudd, J. L. Oliver and S. H. Garofalini, Mat. Res. Soc. Symp. Pro., Vol.280 (1993) p.689 [60] H. Maeda, S. Ikari, S. Masuda, K. Kusakabe and S. Morooka, Diamond Relat. Mater.,Vol.2 (1993) p.758 [61] P. Karve, S. R. Sainkar and S. T. Kshirsagar, Mater. Lett. Vol.34 (1998) p.387 [62] Z. Feng, M. A. Brewer, K. Komvopoulos, I. G. Brown and D. B. Bogy, J. Mater. Res., Vol.10 (1995) p. 165 [63] S. Yugo, T. Kanai, T. Kimura and T. Muto, Appl. Phys. Lett. Vol.58 (1991) 1036 [64] S. Yugo, N. Nakamura and T. Kimura, Diamond Relat. Mater., Vol.7 (1998) p.1017 [65] Y. K. Kim, Y. S. Han and J. Y. Lee, Diamond Relat. Mater., Vol.7 (1998) p.96 [66] B. R. Stoner, G. H. Ma, S. D. Wolter and J. T. Glass, Phys. Rev. B Vol.45 (1992) p. 11067 [67] S. P. Mcginnis, M. A. Kelly and S. B. Hagström, Appl. Phys. Lett. Vol.66 (1995) p.3117 [68] R. Stöckel, K. Janischowsky, S. Rohmfeld, J. Ristein, M. Hundhausen and L. Ley, J. Mater, Res., Vol.10 (1995) 158 [69] J. Singh, J. Mater. Sci. Vol.29 (1994) p.2761 [70] B. V. Derjaguin and D. V. Fedoseev, “Growth of diamond and graphite from gas phase”, Nauka, Moscow, Russian (1977) [71] M. Tsuda, M. Nakajima and S. Oikawa, J. Am. Chem. Soc., Vol.108 (1986) p.5780 [72] M. Tsuda, M. Nakajima and S. Oikawa, Jpn. J. Appl. Phys., Vol.26 (1987) L527 [73] R. Badzian and R. C. DeVries, Mat. Res. Bull., Vol.23 (1988) p. 385 [74] R. Badzian, T. Badzian, R. Roy, R. Messier and K. E. Spear, Mat. Res. Bull., Vol.23 (1988) p.531 [75] K. E. Spear, J. Am. Ceram. Soc., Vol.72 (1989) p.171 [76] S. J. Harris and A. M. Weiner, Appl. Phys. Lett., Vol.53 (1988) p.1605 [77] J. T. Wang and J. O. Carlsson, Surf. Coat. Technol., Vol.43/44 (1990) p.1 [78] A. Weimer, F. M. Cerio and C. E. Johnson, J. Mater. Sci., Vol.6 (1991) p.2134 [79] W. Banholzer, Surf. Coat. Technol., Vol.53 (1990) p.1 [80] W. J. Zhang, X. S. Sun, H. Y. Peng, N. Wang, C. S. Lee, I. Bello and S. T. Lee, Phys. Rev. B, Vol.61 (2000) p.5579 [81] M. Y. Liao, X. M. Meng, X. T. Zhou, J. Q. Hu and Z. G. Wang, J. Cryst. Growth Vol.236 (2002) p.85 [82] S. Veprek, J. Cryst. Growth Vol.17 (1972) p.101 [83] M. Sommer, K. Mui and F. W. Smith, Solid State Commun., Vol.69 (1989) p.775 [84] H. Schlichting, “Boundary Layer Theory”, McGraw-Hill Co., (1968) [85] R. Avni and U. Carmi, Mater. Sci. Eng., Vol.71 (1985) p.341 [86] S. Sakai, T. Wang, Y. Morishima and Y. Naoi, J. Cryst. Growth Vol.221 (2000) p.334 [87] D. Cherns, J. Barnard and H. Mokhtari, Mater. Sci. Eng., B Vol.66 (1999) p.33 [88] J. L. Rouviere, M. Arlery, B. Daudin, G. Feuillet and O. Briot, Mater. Sci. Eng., B Vol.50 (1997) p.61 [89] D. Kapolnek, X. H. Wu, B. Heying, S. Keller, B. P. Keller, U. K. Mishra, S. P. DenBaars and J. S. Speck, Appl. Phys. Lett. Vol.67 (1995) p.1541 [90] D. Cherns, W. T. Young and F.A. Ponce, Mater. Sci. Eng., B Vol.50 (1997) p.76 [91] F. Ponce, D. Cherns, W. T. Young amd J. W. Steeds, Appl. Phys. Lett., Vol.69 (1996) p.770 [92] L. Sugiura, Appl. Phys. Lett. Vol.70 (1997) p.1317 [93] J. E. Northrup and J. Neugebauer, Phys. Rev. B Vol.60 (1999) p.R8473 [94] K. Watanabe, J. R. Yang and S. Y. Huang, Appl. Phys. Lett. Vol.82 (2003) p.718 [95] P. Y. Lin and Y. C. S. Wu, Material Chemistry and Physics Vol.80 (2003) p.397 [96] S. Kitamura, K. Hiramatsu and N. Sawaki, Vol.34 (1995) p.L1184 [97] I. H. Ho and G. B. Stringfellow, Appl. Phys. Lett., Vol. 69 (1996) p.2701 [98] M. D. McCluskey, L. T. Romano, B. S. Keusor, D. P. Bour, N. M. Johnson and S. Bernnan, Appl. Phys. Lett., Vol. 72 (1998) p.1730 [99] J. Laimer, W. Putz, H. Störi, P. Janz and H. Winkler, Int. J. Refract. Met. Hard Mater., Vol.14 (1996) p.173 [100] Richard B. Jackman, Judith Beckman and John S. Foord, Mater. Sci. Eng., B Vol.29 (1995) p.216 | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/40933 | - |
dc.description.abstract | 在論文中使用TEM觀察氮化鎵晶膜中的差排,此晶膜利用MOCVD磊晶成長於(0001)面之藍寶石基板,發現GaN晶膜以藍寶石基板之共同c軸為中心相互軸旋轉錯開30o角,GaN晶膜中的差排約存在有3%(或更少)的純螺旋差排( )及20%的純刃差排( ),其它剩下的77%為混合型差排( );MOCVD磊晶成長於藍寶石基板之GaN晶膜中主要的差排型式為混合型差排。另外,為了更進一步瞭解GaN/sapphire介面上的差排分佈形貌,我們製備了GaN/sapphire介面的平面觀察(plan-view)之TEM樣品,觀察到相當高密度的差排扭結且平躺在GaN/sapphire介面上,估算出此高應力應變介面上之差排密度約為8x109cm-2,另一截取自接近氮化鎵晶膜表面之平面觀察 TEM樣品具有6x108cm-2的差排密度,兩者相較的結果,顯示平躺在介面處的差排有7.5%轉換成穿透性差排,從介面處生長延伸至氮化鎵晶膜自由表面。
我們利用氮化鎵成功異質磊晶於藍寶石基板的概念,嘗試磊晶鑽石薄膜於4英吋矽晶圓上,在這階段的研究,使用電容式耦合電漿對於大面積的鑽石薄膜成長提供了相當大的優勢,我們使用較少被使用的150MHz頻率之電漿輔助CVD方式來成長,相較於其他方式,此PECVD法不需預先的在矽晶片基板表面機械研磨或散佈鑽石晶種,於不同條件下,沈積出了奈米或微米之鑽石膜,與DLC (Diamond Like Carbon)薄膜,此150MHz的特別頻率是介於一般商用13.56MHz的RF與2.45GHz的微波之間,我們成功的利用此以一設備成長出均勻結晶之鑽石膜於4英吋之矽晶圓上,且其具有約每一小時1μm的成長速率。 | zh_TW |
dc.description.abstract | In this thesis, a TEM observation of dislocations in GaN grown on (0001) sapphire by MOCVD was carried out in this study. The GaN film was rotated 30o around the c axis in the growth plane against the substrate. The finding of this research, according to TEM analysis, is that about 3% (or less) of the threading dislocations are pure-screw ( ), and 20% are pure-edge ( ). The remaining threading dislocations, about 77%, are mixed-type dislocations; i.e., the major dislocation type in GaN epitaxial layer grown on (0001) sapphire is the mixed type. In addition, for further understanding of the dislocation configuration on the interface of GaN/sapphire, a plane view TEM sample of the GaN/sapphire interface was prepared. The plane view TEM picture of GaN/sapphire interface reveals an extremely high density of kink dislocations lying on the interface, with the dislocation density, about 8x109 cm-2, involving high strain and stress. A comparison of 8x109 cm-2 dislocation density with another plane view TEM picture (6x108 cm-2) near the GaN free surface revealed approximately 7.5% of the dislocations lying on the substrate coalescing into threading dislocations generated from the interface to the GaN surface.
Using the concept of hetero-epitaxial GaN grown on sapphire, we try to grow diamond films by hetero-epitaxy on 4 inch silicone wafer. Capacitive coupled plasmas offer major advantages over microwave-introduced plasmas for growth of large area thin films. In this investigation, a novel 150MHz capacitive coupled RF plasma-assisted chemical vapor deposition system was employed to generate several kinds of films, including nano or micro crystalline diamond films and DLC films, without any mechanical pretreatment (pre-seeding). A special frequency of 150MHz, between the commercial RF of 13.56MHz and microwave of 2.45GHz, was carried out to deposit a uniform and quality crystalline diamond film on 4 inch silicon wafer with a 1μm/h growth rate. | en |
dc.description.provenance | Made available in DSpace on 2021-06-14T17:07:28Z (GMT). No. of bitstreams: 1 ntu-97-D88542003-1.pdf: 11907951 bytes, checksum: 15e6320f56901af3496a7d2c546424ee (MD5) Previous issue date: 2008 | en |
dc.description.tableofcontents | List of Tables 4
List of Figures 5 摘要 10 Abstract 12 第一章 前言…………………………………………………14 第二章 文獻回顧……………………………………………17 2.1導論…………………………………………………………………17 2.1.1氮化鎵及氮化鎵薄膜之基本特性……………………………18 2.1.2氮化鎵之晶體結構……………………………………………18 2.1.3氮化鎵的合成…………………………………………………23 2.1.3-1 有機金屬化學氣相沈積(MOCVD)系統……………24 2.1.3-2 分子束磊晶成長法(MBE)…………………………28 2.1.3-3 化學分子束磊晶成長法(CBE)………………………31 2.1.3-4氮化鎵磊晶基板 ……………………………………34 2.1.4氮化鎵磊晶機構………………………………………………37 2.1.5 氮化鎵晶膜中的缺陷…...……………………………………41 2.1.5-1氮化鎵晶膜中的差排…………………………………41 2.1.5-2 氮化鎵晶膜中的疊差………………………………46 2.1.5-3 氮化鎵晶膜中的反向晶界區(Inversion Domain)…48 2.1.5-4氮化鎵量子井結構中的V型缺陷……………………50 2.1.6 差排對氮化鎵半導體的影響………………………………52 2.1.6-1減低載子的活動率……………………………………52 2.1.6-2快速的擴散通道………………………………………54 2.1.6-3增加漏電流量…………………………………………57 2.1.6-4產生V型缺陷…………………………………………57 2.2鑽石簡介…………………………………..………………………62 2.2.1鑽石的晶體結構………………………………………………66 2.2.2鑽石的基本特性與應用………………………………………69 2.2.3鑽石的合成方法………………………………………………74 2.2.3-1 熱燈絲化學氣相沈積(HFCVD)……………………76 2.2.3-2 微波電漿化學氣相沈積(MPCVD)…………………...78 2.2.3-3高密度電漿化學氣相沈積(APR)……………………79 2.2.4鑽石沈積成長機構……………………………………………81 2.2.4-1鑽石沈積之基板種類…………………………………86 2.2.4-2 甲烷氣體與氫氣之反應………………………………89 2.2.4-3增加鑽石成核密度的方法……………………………91 2.2.4-4鑽石沈積之熱力學與動力學…………………………94 第三章 實驗方法……………………………………………..97 3.1.1氮化鎵之磊晶製程…………………………………………..97 3.1.2 穿透式電子顯微鏡(TEM)樣品之製作……………………100 3.1.3穿透式電子顯微鏡(TEM)觀察……………………………102 3.2.1氮化鎵之化學分子束磊晶(CBE)製程………………………102 3.3.1高密度電漿(APR)沈積鑽石薄膜製程………………………103 3.3.2 矽基板之前處理……………………………………………105 3.3.3掃描式電子顯微鏡(SEM)及拉曼光譜(Raman Scattering spectra)分析……………….……………………….....……..105 第四章 結果與討論…………………………………………107 4.1.1氮化鎵晶膜截面觀察………………………………………107 4.1.2氮化鎵晶體繞射點分析……………………………………109 4.1.3氮化鎵晶膜之TEM平面觀察(Plane-View)………………111 4.1.4差排類型分析………………………………………………118 4.1.5理想狀況之差排密度………………………………………122 4.1.6 V型缺陷觀察………………………………………………124 4.1.7 V型缺陷的影響因數………………………………………127 4.1.8量子點(Quantum Dots)的觀察………………………………129 4.1.9結論…………………………………………………………137 4.2.1 CBE成長氮化鎵晶膜表面形貌之SEM觀察………………138 4.2.2 CBE成長氮化鎵晶膜SEM截面觀察………………………138 4.2.3 CBE成長氮化鎵晶膜TEM截面觀察………………………141 4.2.4 CBE成長氮化鎵晶膜TEM之擇區繞射……………………143 4.2.5結論…………………………………………………………145 4.3.1鑽石於矽基板成核觀察……………………………………146 4.3.2不同溫度對沈積鑽石薄膜之影響…………………………150 4.3.3不同甲烷/氫氣比對沈積鑽石薄膜之影響…………………153 4.3.4 結論…………………………………………………………159 參考文獻……………………………………………………160 | |
dc.language.iso | zh-TW | |
dc.title | 異質磊晶成長之氮化鎵與鑽石薄膜研究 | zh_TW |
dc.title | A Study on Hetero-epitaxial Growth of GaN and Diamond Films | en |
dc.type | Thesis | |
dc.date.schoolyear | 96-2 | |
dc.description.degree | 博士 | |
dc.contributor.oralexamcommittee | 王星豪,邱傳聖,蕭健男,林新智,黃慶淵 | |
dc.subject.keyword | 氮化鎵,差排,鑽石,磊晶, | zh_TW |
dc.subject.keyword | GaN,dislocation,diamond,epitaxial, | en |
dc.relation.page | 168 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2008-07-29 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
顯示於系所單位: | 材料科學與工程學系 |
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