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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 楊宏智(Hong-Tsu Young) | |
dc.contributor.author | Kuen-Ren Chen | en |
dc.contributor.author | 陳鯤仁 | zh_TW |
dc.date.accessioned | 2021-06-13T15:17:41Z | - |
dc.date.available | 2009-07-26 | |
dc.date.copyright | 2008-07-26 | |
dc.date.issued | 2008 | |
dc.date.submitted | 2008-07-25 | |
dc.identifier.citation | 1 Zantye, P.B., Kumar, A. and Sikder, A.K. Chemical Mechanical Planarization for Microelectronics Applications. Materials Science and Engineering: R: Reports, 2004, 45(3-6), 89-220.
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Modeling of Chemical-Mechanical Polishing With Soft Pads. Applied Physics A: Materials Science & Processing, 1998, 67(2), 249-252. 9 Jianfeng, L. and Dornfeld, D.A. Material Removal Mechanism in Chemical Mechanical Polishing: Theory and Modeling. Semiconductor Manufacturing, IEEE Transactions on, 2001, 14(2), 112-133. 10 Tseng, W.-T., Chin, J.-H. and Kang, L.-C. Comparative Study on the Roles of Velocity in the Material Removal Rate During Chemical Mechanical Polishing. Journal of the Electrochemical Society, 1999, 146(5), 1952-1959. 11 Hocheng, H., Tsai, H.Y. and Tsai, M.S. Effects of Kinematic Variables on Nonuniformity in Chemical Mechanical Planarization. International Journal of Machine Tools and Manufacture, 2000, 40(11), 1651-1669. 12 Nguyen, V.H. and Shi, F.G. Modeling of the Removal Rate in Chemical Mechanical Polishing. pp. 161-167 (Society of Photo-Optical Instrumentation Engineers, Bellingham, WA, USA, Santa Clara, CA, USA, 2000). 13 Hocheng, H., Tsai, H.Y. and Su, Y.T. Modeling and Experimental Analysis of the Material Removal Rate in the Chemical Mechanical Planarization of Dielectric Films and Bare Silicon Wafers. Journal of the Electrochemical Society, 2001, 148(10), G581-G586. 14 Borucki, L. Mathematical modeling of polish-rate decay in chemical-mechanical polishing. Journal of Engineering Mathematics, 2002, 43(2-4), 105-114. 15 McGrath, J., Davis, C. and McGrath, J. The Effect of Thin Film Stress Levels on CMP Polish Rates for PETEOS Wafers. Journal of Materials Processing Technology, 2003, 132(1-3), 16-20. 16 Philipossian, A. and Olsen, S. Fundamental Tribological and Removal Rate Studies of Inter-Layer Dielectric Chemical Mechanical Planarization. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2003, 42(10), 6371-6379. 17 Seok, J., Sukam, C.P., Kim, A.T., Tichy, J.A. and Cale, T.S. Multiscale Material Removal Modeling of Chemical Mechanical Polishing. 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Applied Surface Science, 2007, 253(20), 8489-8494. 23 Chang, L. On the CMP Material Removal at the Molecular Scale. Journal of Tribology, 2007, 129(2), 436-437. 24 Horng, T.-L. Estimation of Material Removal with the Help of Pad Deformation in Planarization Process. Journal of Materials Processing Technology, 2007, 182(1-3), 139-145. 25 Hooper, B.J., Byrne, G. and Galligan, S. Pad Conditioning in Chemical Mechanical Polishing. Journal of Materials Processing Technology, 2002, 123(1), 107-113. 26 Tyan, F. Pad Conditioning Density Distribution in CMP Process with Diamond Dresser. pp. 2052-2057 (Institute of Electrical and Electronics Engineers Inc., Piscataway, NJ 08855-1331, United States, Portland, OR, United States, 2005). 27 Kim, H. and Jeong, H. Effect of Process Conditions on Uniformity of Velocity and Wear Distance of Pad and Wafer during Chemical Mechanical Planarization. Journal of Electronic Materials, 2004, 33(1), 53-60. 28 Chang, O., Kim, H., Park, K., Park, B., Seo, H. and Jeong, H. Mathematical Modeling of CMP Conditioning Process. Microelectronic Engineering, 2007, 84(4), 577-583. 29 Borucki, L.J., Witelski, T., Please, C., Kramer, P.R. and Schwendeman, D. A Theory of Pad Conditioning for Chemical-Mechanical Polishing. Journal of Engineering Mathematics, 2004, 50(1), 1-24. 30 Kasai, T. A Kinematic Analysis of Disk Motion in a Double Sided Polisher for Chemical Mechanical Planarization (CMP). Tribology International, 2008, 41(2), 111-118. 31 Byrne, G., Mullany, B. and Young, P. Effect of Pad Wear on the Chemical Mechanical Polishing of Silicon Wafers. CIRP Annals - Manufacturing Technology, 1999, 48(1), 143-146. 32 Zhou, Y.-Y. and Davis, E.C. Variation of Polish Pad Shape During Pad Dressing. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 1999, B68(2), 91-98. 33 Chen, C.-Y., Yu, C.-C., Shen, S.-H. and Ho, M. Operational Aspects of Chemical Mechanical Polishing Polish Pad Profile Optimization. Journal of the Electrochemical Society, 2000, 147(10), 3922-3930. 34 Bastawros, A., Chandra, A., Guo, Y. and Yan, B. Pad Effects on Material-Removal Rate in Chemical-Mechanical Planarization. Journal of Electronic Materials, 2002, 31(10), 1022-1031. 35 Castillo-Mejia, D., Kelchner, J. and Beaudoin, S. Polishing Pad Surface Morphology and Chemical Mechanical Planarization. Journal of the Electrochemical Society, 2004, 151(4), 271-278. 36 Kim, H., Jeong, H., Lee, E. and Shin, Y. Pad Surface Characterization and its Effect on the Tribological State in Chemical Mechanical Polishing. Key Engineering Materials, 2004, 257-258, 383-388. 37 McGrath, J. and Davis, C. Polishing Pad Surface Characterization in Chemical mechanical Planarisation. Journal of Materials Processing Technology, 2004, 153-154(1-3), 666-673. 38 Ng, D., Kulkarni, M., Xu, G., Severs, P., Marvin, R., Xiao, J. and Liang, H. Understanding Polymeric Pads in Pre-CMP Conditioning. Journal of ASTM International, 2005, 2(5), 221-231. 39 Fan, Q., Zhu, J., Zhang, B. and Shen, W. Factors affecting the surface shape and removal rate of workpiece in CMP. p. 61491 (International Society for Optical Engineering, Bellingham WA, WA 98227-0010, United States, Xian, China, 2006). 40 Zantye, P.B., Kumar, A., Dallas, W., Ostapenko, S. and Sikder, A.K. Investigation of the Nonuniformities in Polyurethane Chemical Mechanical Planarization pads. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2006, 24(1), 25-33. 41 Park, K.H., Kim, H.J., Chang, O.M. and Jeong, H.D. Effects of Pad Properties on Material Removal in Chemical Mechanical Polishing. Journal of Materials Processing Technology, 2007, 187-188, 73-76. 42 Paul, E., Horn, J., Li, Y. and Babu, S.V. A Model of Pad-Abrasive Interactions in Chemical Mechanical Polishing. Electrochemical and Solid-State Letters, 2007, 10(4), 131-133. 43 Chen, K.-R., Young, H.-T. and Hsiao, C.-M. Modeling of Dressing Rate of Diamond Dressers in Chemical Mechanical Polishing and Its Industrial Applications. 8th Asia-Pacific Conference on Materials Processing Guilin, China, 2008). 44 Tso, P.L. and Ho, S.Y. A Study on the Dressing Rate in CMP Pad Conditioning. Key Engineering Materials, 2004, 257-258, 377-380. 45 Tso, P.-L. and Ho, S.-Y. Factors Influencing the Dressing Rate of Chemical Mechanical Polishing Pad Conditioning. International Journal of Advanced Manufacturing Technology, 2007, 33(7-8), 720-724. 46 Brinksmeier, E. and Cinar, M. Characterization of Dressing Processes by Determination of the Collision Number of the Abrasive Grits. CIRP Annals - Manufacturing Technology, 1995, 44(1), 299-304. 47 Li, Y. Why CMP. In Li, Y., ed. Micorelectronic Applications of Chemical Mechanical Planarization, pp. 1-24 (Wiley-Interscience, Hoboken, N.J, 2008). 48 Freeman JL, T.C., Wilson SR. Handbook of Multilevel Metallization for Integrated Circuits: Materials, Technology, and Applications. (Noyes Publications, Park Ridge, NJ, 1993). 49 Sivaram, S., Monnig, K., Tolles, R., Maury, A. and Leggerr, R. Overview of Planarization by Mechanical Polishing of Interlevel Dielectrics. Proc. 3rd Int. Symposium on ULSI Science and Technology, pp. 606-616 (ULSI Science and Technology, Washington, D.C 1991). 50 Ohi, T. Trends and Future Developments for Diamond CMP Pad Conditioners. Industrial Diamond Review, 2004, 64(1), 14-17. 51 Tsujimura, M. Processing Tools for Manufacturing. In Li, Y., ed. Micorelectronic Applications of Chemical Mechanical Planarization, pp. 57-90 (Wiley-Interscience, Hoboken, N.J, 2008). 52 ITRS. (International Technology Roadmap for Semiconductors. 2007). 53 Tucker, T. Equipment Used in CMP Processes. In Oliver, M.R., ed. Chemical Mechanical Planarization of Semiconductor Materials, pp. 133-165 (Springer, New York, 2004). 54 Hong, H., Huang, Y.-L. and Chen, L.-J. Kinematic Analysis and Measurement of Temperature Rise on a Pad in Chemical Mechanical Planarization. Journal of the Electrochemical Society, 1999, 146(11), 4236-4239. 55 Tso, P.-L. and Pai, Y.-L. Amorphous Diamond Dresser for CMP Fixed Abrasives Pad. Key Engineering Materials, 2007, 329, 157-161. 56 Kajiwara, J., Moloney, G.S., Wang, H.-M., Hansen, D.A. and Reyes, A. System and Method for Pneumatic Diaphragm CMP Head Having Separate Retaining Ring and Multiregion Wafer Pressure Control. (Multi-Planar Technologies, Inc., US, 2003). 57 Inaba, T. Wafer Polishing Apparatus with Retainer Ring. (Tokyo Seimitsu Co., Ltd., US, 2000). 58 Kimura, N., Sakata, F. and Takahashi, T. Polishing Endpoint Detection Method. (Ebara Corporation, US, 1997). 59 Koos, D.A. and Meikle, S. Optical End Point Detection Methods in Semiconductor Planarizing Polishing (Micron Technology, Inc., US, 1995). 60 Pan, Y. New Chemical Mechanical Planarization (CMP) End Point Detection Apparatus. (Chartered Semiconductor Manufacturing Pte Ltd., US, 1997). 61 Chiou, H.-W. and Chen, L.-J. Temperature Compensated Chemical Mechanical Polishing to Achieve Uniform Removal Rates. (Industrial Technology Research Institute, 1999). 62 Chen, L.-J. Chemical Mechanical Polishing (CMP) Endpoint Method. (Industrial Technology Research Institute, US, 1997). 63 Basim, G.B. and Moudgi, B. Slurry Design for Chemical Mechanical Polishing. KONA Power Technol. Jpn., 2003, 21, 178-184. 64 Robinson, K. Fundamentals of CMP Slurry. In Oliver, M.R., ed. Chemical Mechanical Planarization of Semiconductor Materials, pp. 215-249 (Springer, New York, 2004). 65 Ein-Eli, Y., Abelev, E., Rabkin, E. and Starosvetsky, D. The Compatibility of Copper CMP Slurries with CMP Requirements. Journal of the Electrochemical Society, 2003, 150(9), C646-C652. 66 Wang, C., Paul, E., Kobayashi, T. and Li, Y. Pads for IC CMP. In Li, Y., ed. Micorelectronic Applications of Chemical Mechanical Planarization, pp. 123-169 (Wiley-Interscience, Hoboken, N.J, 2008). 67 James, D.B. CMP Polishing Pads. In Oliver, M.R., ed. Chemical Mechanical Planarization of Semiconductor Materials, pp. 167-213 (Springer, New York, 2004). 68 Faires, J.D. and Burden, R.L. Numerical Methods. (PWS-Kent Pub. Co. , Boston, 1993). 69 Burden, R.L. and Faires., J.D. Numerical Analysis. (Thomson Brooks, Belmont, CA, 2005). 70 Gopal Prabhu, D.F., and Satyasrayan, Applied Materials, Inc and Sohail Qamar and Thomas Namola, A.T. Pad Life Optimization by Characterization of a Fundamental Pad-Disk Interaction Property. Abrasive Technology Techview, 2004. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/36997 | - |
dc.description.abstract | 化學機械研磨為半導體製程當中最常被採用的平坦化技術,研磨墊表面需要適度的以鑽石修整器修整,以維持化學機械研磨製程之穩定性及產能。本研究計算鑽石修整器上所有鑽石刮劃研磨墊之次數分佈,以模擬預測修整過後研磨墊表面之外型。鑽石與研磨墊之相對速度經實驗證實對修整率並無影響,因此統計刮劃次數時並不需要考慮速度的影響。本研究首先模擬不同鑽石分布方式的修整器之修整結果,如環形與全面分布、不同鑽石間距、整齊與不規則排列等。接著探討各種設備上對應之修整參數,如轉速、修整器掃掠之幅度及頻率等對研磨墊外形之影響。另外,本研究定義出一個修整過程的均勻度指標,可用來最佳化掃掠頻率以確保研磨墊各處隨時都被均勻地修整。模擬預測之研磨墊外型亦與實際使用過的研磨墊做比對,兩者之趨勢一致,證實刮劃次數可有效的預測研磨墊外型。根據本研究所建立的模擬程式,使用者可以直接針對設備上可調的參數進行模擬,進而找出最佳的修整參數。 | zh_TW |
dc.description.abstract | Chemical mechanical polishing (CMP) is the planarization technology most often used for semiconductor processes. The polishing pad needs to be dressed by a dresser to maintain the stability and the throughput of the planarization process. This study simulated and predicted the pad profile by calculating the distribution of scratch numbers of diamonds against the pad. The effect of the relative velocity between a dresser and a pad has been experimentally verified to be insignificant on dressing rate, so the simulation did not take the effect of relative velocity into account. First, different types of dressers, including ring-types and full-type, different pitches and arrangements, were simulated. Then, the effects of different dressing conditions, rotational speeds, sweep amplitudes and frequencies were examined. A uniformity index was defined to optimize the uniformity of dressing process. The simulated pad profile was then compared to the actual pad profiles and results were very similar. According to the simulation model, users can directly modify the parameters that are adjustable in the equipment and find the optimum dressing condition. | en |
dc.description.provenance | Made available in DSpace on 2021-06-13T15:17:41Z (GMT). No. of bitstreams: 1 ntu-97-R95522729-1.pdf: 3399671 bytes, checksum: bda776d6d9632095ac79ca787e38573d (MD5) Previous issue date: 2008 | en |
dc.description.tableofcontents | 口試委員會審定書 I
致謝 III 摘要 IV Abstract V Contents VI List of Figures IX List of Tables XI Chapter 1. Introduction 1 1.1 Background 1 1.1.1 Introduction to Semiconductor Process 1 1.1.2 Applications of CMP to Semiconductor Process 3 1.1.3 Why Dressing? 6 1.1.4 Challenges in CMP 7 1.1.5 Modeling of Dressing 7 1.2 Motivation 10 1.3 Objectives 11 1.4 Organization 12 Chapter 2. Chemical Mechanical Polishing 13 2.1 Fundamental of Planarization Technology 13 2.2 Process of Chemical Mechanical Polishing 16 2.3 Equipment in CMP 19 2.3.1 Overview of CMP Equipment 19 2.3.2 Kinematics Systems 22 2.3.3 Carrier of Wafer 25 2.3.4 Endpoint Detection 27 2.4 Consumables in CMP 28 2.4.1 Slurry 29 2.4.2 Pad 31 2.4.3 Dresser 34 Chapter 3. Methods 37 3.1 Overview of the Model 37 3.2 Diamond Pattern 39 3.2.1 Diamond Pitch 39 3.2.2 Arrangement of Diamond 40 3.2.3 Distribution Area of Diamond 41 3.3 Trajectory Equation 43 3.4 Solving the Trajectory Equation 47 3.4.1 Bisection method 48 3.4.2 Fixed-point method 48 3.4.3 Newton-Raphson method 49 3.4.4 Secant Method 50 3.4.5 Selection of Numerical Method 50 3.4.6 Key Points of Solving Equations 51 3.5 Effect of Relative Velocity 56 3.5.1 Experimental Equipments 56 3.5.2 Experimental Design 60 3.5.3 Measurement 61 3.5.4 Results 63 Chapter 4. Simulation Results and Discussion 64 4.1 Simulation Conditions 64 4.2 Diamond Distribution of Dresser 65 4.2.1 Diamond Pitch 65 4.2.2 Grid and Random Arrangement 66 4.2.3 Distribution Area of Diamonds 67 4.2.4 Summary of Diamond Distribution 68 4.3 Dressing Conditions 69 4.3.1 Start Position and End Position 69 4.3.2 Ratio of Rotational Speed 72 4.3.3 Sweep Frequency 74 4.4 Uniformity of Dressing Process 76 4.5 Examination of Pad Profile 82 Chapter 5. Conclusions and Future Works 84 5.1 Conclusions 84 5.2 Future Works 86 References 87 | |
dc.language.iso | en | |
dc.title | 化學機械研磨之修整加工機制研究分析 | zh_TW |
dc.title | Study on Dressing Behaviors in Chemical Mechanical Polishing | en |
dc.type | Thesis | |
dc.date.schoolyear | 96-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 李文華(Wen-Hwa Lee),沈永康(Yung-Kang Shen),巴白山(Pai-Shan Pa) | |
dc.subject.keyword | 化學機械研磨,鑽石修整器,研磨墊,軌跡分析, | zh_TW |
dc.subject.keyword | Chemical Mechanical Polishing,Diamond Dresser,Pad,Trajectory Analysis, | en |
dc.relation.page | 94 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2008-07-25 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 機械工程學研究所 | zh_TW |
顯示於系所單位: | 機械工程學系 |
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