使用平面型探針群量測蝕刻系統之電漿均勻性

Abstract

現今半導體工業中，蝕刻製程佔有重要之地位，凡舉其製程中之零件使用皆為各製程中需求最精密之加工，而各廠商也大量投資發展其核心技術。美國應材公司更於1999年發展出一套快速量測蝕刻製程中蝕刻機制之均勻性的設備，作為其研發蝕刻設備之一大利器。 本研究以GEC參考腔體，作為本實驗對於電漿研究之發展依據，本論文即首度嘗試啟動此設備並成功產生並維持電漿，過程中克服反射功率太大的問題，並使用同樣原理自行組裝八吋與十二吋腔體。其困難之處在於如何設計真空系統與公差之決定，最後成功產生電漿。由複數平面型探針量測四吋反應性離子電漿蝕刻晶圓之均勻性，在此實驗中設計為五組，亦設計出八吋之探針，不過於此實驗中並未用以量測。使用四吋腔體之量測結果與這幾年間全球對於GEC參考腔體之研究做一驗證，並探討此量測設備之設計條件及其原理。

Etching process has played a crucial role in modern semiconductor industry. Most suppliers tried hard to investing research and development as their own nucleus technology. Applied Materials had developed a device, diagnostic pedestal assembly, for measuring the uniformity of etching process, as an efficient instrument for etching equipment research. This experiment is based on a GEC reference cell. Attempt to start up this equipment, and then successfully maintain plasma with it. Use the same method to fabricate an eight inch chamber and twelve inch chamber and successfully maintaining plasma with it. During it, the hardest part is the design of the vacuum system and the tolerance of it. Then design a multiple planar type plasma probe, size of four and eight inch, to measure the uniformity of four inch plasma etching system. And verify with such researches of GEC reference cell among these years, and discuss the testing conditions.