請用此 Handle URI 來引用此文件：
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/33264完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 楊照彥(Jaw-Yen Yang) | |
| dc.contributor.author | Kuang-Chung Liu | en |
| dc.contributor.author | 劉光中 | zh_TW |
| dc.date.accessioned | 2021-06-13T04:31:49Z | - |
| dc.date.available | 2008-07-24 | |
| dc.date.copyright | 2006-07-24 | |
| dc.date.issued | 2006 | |
| dc.date.submitted | 2006-07-19 | |
| dc.identifier.citation | [1] P. J. Hargis, “The Gaseous Electronics Conference radio-frequency reference cell: A defined parallel–plate radio-frequency system for experimental and theoretical studies of plasma-processing discharges”, Rev. Sci. Instrum. Vol. 65, pp. 140-154, 1994.
[2] Godyak V A, “Langmuir probe diagnostic in RF plasma report,” E-23, 4ist Ann. GEC, 1988. [3] 林志龍， 「電漿製程環境中雙極性靜電吸盤的量測與開發」，國立台灣大學應用力學研究所， 碩士論文，2005。 [4] K. H. Ke, “Diagnostic Pedestal Assembly for a Semiconductor Wafer Processing System,” USPTO 5,989,349 , 1999. [5] B. Chapman, Glow discharge processes, John Wiley & Sons, New York, 1985. [6] 張慶彥， 「具射頻補償之蘭牟爾探針電漿量測系統之研製與量測分析」，國立清華大學工程與系統科學系， 碩士論文，1998。 [7] L. Schott, Electric Probe in Plasma Diagnostic, AIP Press, New York, 1995. [8] Francis F. Chen, Electric Probe in Plasma Diagnostic Techniques, Academic Press, New York, 1967. [9] 王聖元， 「外置式線圈離子化物理氣相沉積系統之電漿特性量測」， 國立清華大學工程與系統科學系， 碩士論文， 2002。 [10] I. H. Hutchinson, Principle of Plasma Diagnostics, Second Edition, Cambridge University Press, 2002. [11] Francis F. Chen, Introduction to Plasma Physics and Controlled Fusion, Second Edition, Plenum Press, New York and London, 1984. [12] Shawming Ma, “Plasma Charging Damage Characterization of 200mm and 300mm Dielectric Etch Chambers Using Bias Voltage Diagnostic Cathodes,” 7th International Symposium on Plasma and Process Induced Damage, June 2002. [13] J. K. Olthoff and R. J. Van Brunt, “Ion Kinetic-energy distribution in argon rf glow discharges,” J. Appl. Phys. 72(10), 1992. [14] M. J. Buie, “ Characterization of Etch rate non-uniformity in a magnetically enhanced reactive ion etcher,” J. Vac. Sci. Technol. A 16(3), 1998. [15]張家豪，「電漿源原理與應用之介紹」，物理雙月刊，28（2）， 2006. [16]I M EI-Fayoumi, “Hysteresis in the E- to H-mode transition in a planar coil, inductively coupled rf argon discharge,” J. Appl. Phys .Vo.31, pp. 3082-3094, 1998. [17] J. K. Olthoff and R. J. Van Brunt, “Kinetic energy distribution of ions sampled from argon plasmas in a parallel plate, radio frequency reference cell, ” J. Appl. Phys., Vol.75 (1), pp.155-125, January 1994. [18] E. C. Benck, A. Schwabedissen, A. Gates, and J. R. Roberts, “Investigations in the sheath region of a radio frequency biased inductively coupled plasma,” J. Vac. Sci. Technol. A 16(1), pp. 306-315, January 1998. [19]M. A. Sobolewski, “Measuring the ion current in electrical discharges using radio frequency current and voltage measurements,” J. Appl. Phys. Vol.72 (10), pp. 1146-1148, March 1998. [20]M. A. Sobolewski, “Ion energy distributions and sheath voltages in a radio frequency biased, inductively coupled, high density plasma reactor,” J. Appl. Phys. Vol.85 (8), pp. 3966-3975, April 1999. [21]Y. Wang and J. K. Olthoff, “Ion energy distributions in inductively coupled radio frequency discharges in argon, oxygen, chlorine, and their mixtures,” J. Appl. Phys. Vol.85 (9), pp.6358-6365, May 1999. [22]Y. Wang, and J. K. Olthoff, “Studies of ion bombardment in high density plasmas containing CF4,” J. Vac. Sci. Technol. A 17 (4), pp.1552-1555, July 1999. [23] Y. Wang and J. K. Olthoff “Ion fluxes and energies in inductively coupled radio frequency discharges containing CHF3,” J. Appl. Phys. Vol.88 (10), pp. 5612-5617, November 2005. [24] M. A. Sobolewski, “Measuring the ion current in high density plasmas using radio frequency current and voltage measurements,” J. Appl. Phys. Vol.90 (6), pp. 2660-2771, September 2001. [25]J. H. Keller, “Inductive plasmas for plasma processing,” Plasma Sources Sci. Technol. Vol.5, pp. 166-172, 1996 [26]Z. Yu, and D. Shaw, “Large area radio frequency plasma for microelectronics processing,” J. Vac. Sci. Technol. A 13 (3), pp. 871-874, May 1995) | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/33264 | - |
| dc.description.abstract | 現今半導體工業中，蝕刻製程佔有重要之地位，凡舉其製程中之零件使用皆為各製程中需求最精密之加工，而各廠商也大量投資發展其核心技術。美國應材公司更於1999年發展出一套快速量測蝕刻製程中蝕刻機制之均勻性的設備，作為其研發蝕刻設備之一大利器。
本研究以GEC參考腔體，作為本實驗對於電漿研究之發展依據，本論文即首度嘗試啟動此設備並成功產生並維持電漿，過程中克服反射功率太大的問題，並使用同樣原理自行組裝八吋與十二吋腔體。其困難之處在於如何設計真空系統與公差之決定，最後成功產生電漿。由複數平面型探針量測四吋反應性離子電漿蝕刻晶圓之均勻性，在此實驗中設計為五組，亦設計出八吋之探針，不過於此實驗中並未用以量測。使用四吋腔體之量測結果與這幾年間全球對於GEC參考腔體之研究做一驗證，並探討此量測設備之設計條件及其原理。 | zh_TW |
| dc.description.abstract | Etching process has played a crucial role in modern semiconductor industry. Most suppliers tried hard to investing research and development as their own nucleus technology. Applied Materials had developed a device, diagnostic pedestal assembly, for measuring the uniformity of etching process, as an efficient instrument for etching equipment research.
This experiment is based on a GEC reference cell. Attempt to start up this equipment, and then successfully maintain plasma with it. Use the same method to fabricate an eight inch chamber and twelve inch chamber and successfully maintaining plasma with it. During it, the hardest part is the design of the vacuum system and the tolerance of it. Then design a multiple planar type plasma probe, size of four and eight inch, to measure the uniformity of four inch plasma etching system. And verify with such researches of GEC reference cell among these years, and discuss the testing conditions. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-13T04:31:49Z (GMT). No. of bitstreams: 1 ntu-95-R93543060-1.pdf: 1783908 bytes, checksum: 389da004f2abf1b1f92718d87a686a2c (MD5) Previous issue date: 2006 | en |
| dc.description.tableofcontents | 中文摘要………………………………………………………………1
英文摘要………………………………………………………………2 目次……………………………………………………………………3 圖目次…………………………………………………………………5 第一章 簡介…………………………………………………………10 第二章 文獻回顧……………………………………………………16 第三章 理論分析……………………………………………………20 3.1 電漿簡介與產生原理 ……………………………………20 3.2 探針簡介 …………………………………………………26 3.3 電流-電壓曲線 …………………………………………27 3.4 平面型探針理論 …………………………………………30 第四章 實驗架構 …………………………………………………40 4.1 電漿產生 …………………………………………………40 4.2 探針設計 …………………………………………………52 4.3 實驗設計…………………………………………………63 4.4 實驗校正…………………………………………………65 第五章 實驗結果與討論 …………………………………………66 5.1 實驗結果…………………………………………………66 5.2 實驗討論…………………………………………………86 5.3 結語與展望………………………………………………87 參考文獻……………………………………………………………90 附錄一、四吋絕緣座基磐設計圖…………………………92 附錄二、八吋絕緣座基磐設計圖…………………………93 附錄三、八吋探針所用下電極設計圖……………………94 | |
| dc.language.iso | zh-TW | |
| dc.subject | 電漿平面型探針群 | zh_TW |
| dc.subject | 均勻度量測 | zh_TW |
| dc.subject | multiple planar type probes | en |
| dc.subject | uniformity of plasma system | en |
| dc.title | 使用平面型探針群量測蝕刻系統之電漿均勻性 | zh_TW |
| dc.title | Measurements of Uniformity of Plasma Etching System Using Planar Type Multiple Probes | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 94-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 王興華(Ching-Hua Wang),周榮源(Rong-Yuan Jou) | |
| dc.subject.keyword | 電漿平面型探針群,均勻度量測, | zh_TW |
| dc.subject.keyword | multiple planar type probes,uniformity of plasma system, | en |
| dc.relation.page | 94 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2006-07-21 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 應用力學研究所 | zh_TW |
| 顯示於系所單位： | 應用力學研究所 | |
文件中的檔案：
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| ntu-95-1.pdf 未授權公開取用 | 1.74 MB | Adobe PDF |
系統中的文件，除了特別指名其著作權條款之外，均受到著作權保護，並且保留所有的權利。