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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/31697完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 陳敏璋(Miin-Jang Chen) | |
| dc.contributor.author | Ying-Tsang Shih | en |
| dc.contributor.author | 施穎蒼 | zh_TW |
| dc.date.accessioned | 2021-06-13T03:17:50Z | - |
| dc.date.available | 2016-07-27 | |
| dc.date.copyright | 2006-07-31 | |
| dc.date.issued | 2006 | |
| dc.date.submitted | 2006-07-30 | |
| dc.identifier.citation | Chap.1
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/31697 | - |
| dc.description.abstract | 直接使用矽半導體製作出高效率之發光二極體，一直是重要地位的研究課題，本論文研究金屬-氧化層-矽半導體(MOS)發光二極體之發光特性。我們利用新穎的薄膜成長技術-原子層沉積技術(Atomic Layer Deposition，ALD)-來成長氧化鋁薄膜，由於ALD技術具有低材料成長溫度、厚度控制精準、薄膜缺陷密度低、無孔洞結構、介面品質良好等優點，因此所成長的高品質氧化層，可以提供優良的表面鈍化效果，藉此抑制元件中的非放光性複合
(nonradiative recombination)能階的密度，矽發光二極體的發光效率可以因此而提升。我們首先研究材料成長溫度對氧化鋁薄膜與矽半導體之介面的影響，得到最佳的氧化鋁成長溫度為100°C，接著使用三甲基鋁(trimethylaluminum)在不同的溫度下，對矽半導體表面做預處理，藉此得到更好的矽半導體與氧化鋁之介面品質。最後在最佳的氧化鋁成長溫度下，我們研究不同厚度的氧化鋁薄膜對發光效率的影響，得到最佳的氧化鋁薄膜厚度為5nm，藉由量測PL (Photoluminescence)頻譜隨溫度變化的情形，我們發現利用ALD成長之氧化鋁薄膜與矽半導體介面之間，具有bound exciton traps，此機制有效抑制非放光性能階的活化能(activation energy)，藉此可以提高MOS發光二極體的外部量子效率。在室溫時利用ALD成長氧化鋁薄膜之MOS元件，其最佳之外部量子效率(external quantum efficiency)可以達到 ，遠超過使用相同基材成長相同厚度之熱氧化層之MOS發光二極體的發光效率。 | zh_TW |
| dc.description.provenance | Made available in DSpace on 2021-06-13T03:17:50Z (GMT). No. of bitstreams: 1 ntu-95-R93527032-1.pdf: 1360759 bytes, checksum: 9602cb6baeca9da623cddf8aec3dd265 (MD5) Previous issue date: 2006 | en |
| dc.description.tableofcontents | 第一章 簡介
1-1簡介 1 1-2文獻回顧 5 1-3論文導覽 8 第二章 原子層沉積技術 2-1簡介 11 2-2原子層沉積技術之原理與特性 13 2-3原子層沉積技術之反應裝置 17 2-4氧化鋁薄膜之成長 19 2-5結論 24 參考文獻 25 第三章 使用ALD在不同溫度下成長氧化鋁薄膜作為 MOS矽發光二極體之氧化層 3-1簡介 27 3-2元件結構與製作步驟 28 3-3元件的電性量測 31 3-4元件的光學特性量測 47 3-5結論 68 參考文獻 69 第四章 使用ALD在不同溫度下進行TMA預處理 對元件發光效率之影響 4-1簡介 71 4-2實驗設計 74 4-3元件光電特性量測 77 4-4結論 80 參考文獻 81 第五章 使用ALD成長不同厚度氧化鋁薄膜 對元件發光效率之影響 5-1簡介 83 5-2元件製作步驟 84 5-3元件光電特性量測 85 5-4結論 90 參考文獻 91 第六章 結論 6-1論文回顧 93 6-2未來展望 95 | |
| dc.language.iso | zh-TW | |
| dc.subject | 矽發光二極體 | zh_TW |
| dc.subject | 原子層沉積技術 | zh_TW |
| dc.subject | atomic layer deposition | en |
| dc.subject | silicon light emitting diode | en |
| dc.title | 利用原子層沉積技術成長氧化鋁-應用於矽發光二極體之研究 | zh_TW |
| dc.title | Study of Silicon Light-Emitting Diodes with Al2O3 thin films grown by Atomic Layer Deposition | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 94-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 陳俊維(Chun-Wei Chen),陳學禮(Hsuen-Li Chen),蔡豐羽(Feng-Yu Tsai),鄭永楨 | |
| dc.subject.keyword | 原子層沉積技術,矽發光二極體, | zh_TW |
| dc.subject.keyword | atomic layer deposition,silicon light emitting diode, | en |
| dc.relation.page | 95 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2006-07-30 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
| 顯示於系所單位： | 材料科學與工程學系 | |
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