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標題: | 添加元素對高倍速InSb光學記錄薄膜之光學性質與顯微結構的影響 Effects of dopants on the optical properties and microstructure of the high speed InSb optical recording thin film |
作者: | Shu-Chi Sheu 許書齊 |
指導教授: | 郭博成 |
關鍵字: | 相變化光碟,高倍速,InSb, phase change recording,high speed,InSb, |
出版年 : | 2006 |
學位: | 碩士 |
摘要: | 摘要
隨著高記錄密度光碟的發展,研究高倍速相變化記錄層材料是很重要的發展方向,經由前人的研究報導指出In15Sb85具有快速的結晶速率(<6 ns),但由於非晶相的不穩定所以我們試著添加其他元素(Zn、Bi)來穩定其非晶相記錄點。本實驗採用In和Sb靶以DC直流磁控共鍍方式製備200Å之In15Sb85 合金薄膜,作為高倍速相變化光碟片之記錄層材料。由Tx 熱分析實驗結果顯示添加Zn 後的(In15Sb85)100-xZnx 薄膜(x=0~17.4)之相變化溫度約在181℃~221 ℃之間,活化能值則介於2.18∼3.26 eV 之間。添加Bi 後的(In15Sb85)100-xBix 薄膜之相變化溫度約在181~167 ℃之間,活化能值則介於2.18∼1.5 eV 之間。顯示添加Zn 可以穩定非晶相,添加Bi 會增加結晶速率。 光譜分析結果顯示,(InSb)100-xZnx 與(InSb)100-xBix 薄膜光吸收率皆隨Zn 與Bi 添加量的增加而些微下降,但都具有良好的光吸收率。 在反射率對比值方面,(InSb)100-xZnx 薄膜(x=0~17.4) 對比值隨著Zn 添加量的增加而下降,但是在x=6.2 時在405nm 與650nm 波長下都具有15 %以上的對比值,符合單層相變化記錄層的要求。由XRD 結構分析結果顯示,初鍍(InSb)100-xMx 薄膜(M=Zn or Bi)沒有明顯地結晶,經過250℃,30 分鐘熱處理後,薄膜產生結晶。在(InSb)100-xZnx 薄膜中當x=0~9.1 時薄膜主要為Sb 的相,當x 超過13.7開始出現含有ZnSb 的相。在(InSb)100-xBix 中,當x=8.2~18.3 時,薄膜除了Sb 相之外還有BiIn2 及Bi 的相產生。 TEM 微結構分析發現初鍍的In14.5Sb85.5 薄膜為微晶結構。經過250℃,30 分鐘熱處理之後,薄膜發生大小不一的晶粒粗化,晶粒 大小範圍介於15~75nm。平均晶粒大小約30nm。經過350℃,30分鐘熱處理後晶粒大小變得較為平均並且更加粗化,大約為50nm。添加6.2 at.%的Zn 平均晶粒大小為22nm,而添加17.4 at.%的Zn 時平均晶粒大小為32nm,而添加5.5 at.%的Bi 時平均晶粒大小為50nm。添加18.3 at.%的Bi 時平均晶粒大小為72nm。 Abstract As the development of high density optical recording disc, studying of high speed phase change recording layer is an important goal. It had been reported that the In15Sb85 film has high speed crystallization rate(<6 ns). Because the stability of amorphous mark formed is not very stable, We doped Zn and Bi elements to stable the amorphous recording mark formed. In this study, the In15Sb85 films with 200Å thickness were produced by DC magnetron co-sputtering of In and Sb target, and investigated their application to the recording layer of high speed phase change optical recording media. Thermal analyses show that the phase change temperature of (InSb)100-xZnx films (x=0~17.4) are between 181℃ and 221 ℃, and the activation energy are between 2.18 and 3.26eV . The phase change temperature of (InSb)100-xBix films (x=0~18.3 ) are between 181℃~167℃, and the activation energy are decreased between 2.18 and 1.50 eV. It means that Zn doping stable stabe the amorphous phase formed;Bi doping can increase the crystallization rate. The spectrophotometer analyses show that the absorption of (InSb)100-xZnx and (InSb)100-xBix decreases with increasing Zn and Bi contents. But both of them still have good optical absorption. The optical contrast of (InSb)100-xZnx and (InSb)100-xBix films both decrease with increasing Zn or Bi contents. Their optical contrats are decreased with increasing Zn or Bi contents, but the 15% optical contrast can still be obtained when the Zn contentsequal increases 6.2 at.%. The X-ray diffraction analysis shows that the as-deposited (InSb)100-xZnx and (InSb)100-xBix films do not have any diffraction peak. After annealing at 250℃ for 30 min, the major crystalline phase of (InSb)100-xZnx film (x=0~9.1) are Sb and InSb. The Sb、InSb and ZnSb crystalline phases are appeared as x > 13.7. After the same annealing condition, the Sb、Bi and BiIn2 crystalline phases are found in the (InSb)100-xBix film (0 < x < 18.3 ). The TEM analysis shows that the average grain size of the InSb film is about 30 nm after annealing at 250℃ for 30 min. After Zn doped, the average grain size of the InSb film is decreased to 22 nm as 6.2 at.% Zn is added. However, the grain size is increased to about 32 nm when 17.4 at.% Zn is added. On the other hands, as 5.5 at.% Bi is doped into the InSb film, the average grain size of the film is increases to about 50 nm. When 18.3 at.% Bi is added, the grain grows and the average grain size is about 72 nm. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/31498 |
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