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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/30428
Title: | 氮化鎵二維電子系統之傳輸特性 transport in two-dimensional GaN electron systems |
Authors: | Jian-Zhe Huang 黃健哲 |
Advisor: | 梁啟德(Chi-Te Liang) |
Keyword: | 二維電子,氮化鎵, 2DES,GaN, |
Publication Year : | 2007 |
Degree: | 碩士 |
Abstract: | Abstract
This thesis describes the measurements on the low-temperature electron transport properties in a two-dimensional GaN electron system. This thesis consists of the following two parts: 1. Electron-electron interaction in a perpendicular magnetic field: We report on experimental studies of Al0.15Ga0.85N/GaN high electron mobility transistor (HEMT) structures grown on p-type Si (111) substrates. By introducing an ultra thin SiN layer during the crystal growth, the Hall mobility of the HEMT structure can be greatly enhanced (>3 times). This SiN treatment technique also allows the observation of Shubnikov-de Haas oscillations which is not possible in the untreated HEMT structure. Our experimental results pave way to integration of AlxGa1-xN/GaN HEMT structures with the mature Si technology in industry. 2. Weak localization effect in a perpendicular magnetic field: We can illustrate weak localization by the constructive interference of wave functions which back to the origin after transmitting along time-reversed paths. Electrons will be localized by weal localization. The dephasing time , which determines the time scale kept the constructive interference of wave functions, limits the length of the time-reversed paths. It is known that weak localization causes a negative magnetoresistivity. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/30428 |
Fulltext Rights: | 有償授權 |
Appears in Collections: | 物理學系 |
Files in This Item:
File | Size | Format | |
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ntu-96-1.pdf Restricted Access | 2.21 MB | Adobe PDF |
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