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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/29338完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 黃天偉(Tian-Wei Huang) | |
| dc.contributor.author | Fu-Hung Cheng | en |
| dc.contributor.author | 鄭甫弘 | zh_TW |
| dc.date.accessioned | 2021-06-13T01:04:51Z | - |
| dc.date.available | 2008-07-26 | |
| dc.date.copyright | 2007-07-26 | |
| dc.date.issued | 2007 | |
| dc.date.submitted | 2007-07-22 | |
| dc.identifier.citation | [1] Noel Marshall, “Optimizing multi-stage amplifiers for low-noise,” Microwaves, pp. 62–64, Apr. 1974
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Motouchi, N. Takahashi, A. Yamada, N. Matsumoto, H. Sato, “60GHz-band high-gain MMIC cascode HBT amplifier”, GaAs IC Symp, pp.79-82, Oct. 2001 [14] S. Asgaran, M. J. Deen, “A novel gain boosting technique for design of low power narrow-band RFCMOS LNAs.”, NEWCAS, pp.293-296, Jun. 2004 [15]David M. Pozar, Microwave and RF design of wireless systems, John Wiley & Sons, Inc.2001 [16] S. Kishimoto, K. Maruhashi, M. Ito, Y. Hamada, K. Ohata, “60-GHz-band intentional LO-leakage APDP mixer for SSB self-heterodyne transmitter module”, Microwave Symp, vol.1, pp.183-186, June 2004 [17] Y. Shoji, M. Nagatsuka, K. Hamaguchi, H. Ogawa,“60 GHz band 64 QAMOFDM terrestrial digital broadcasting signal transmission by using millimeter-wave self-heterodyne system”, IEEE Trans, vol.47, pp.218-227, Sep. 2001 [18] Y. Shoji, K. Hamaguchi, H. Ogawa, “Millimeter-wave remote self-heterodyne system for extremely stable and low-cost broad-band signal transmission”, IEEE Trans, vol.50, pp.1458-1468, June 2002 [19] K. Kurokawa, “Power waves and the scattering matrix,” IEEE Trans. Microwave Theory Tech., vol. 13, no. 2, pp. 194-202, Mar. 1965. [20] B. Razavi, RF microelectronics, Prentice-Hall, Inc., 1998 [21] .高頻元件量測技術 蘇嘉祥、黃國威 奈米通訊。第七卷第三期 [22] S. Ergun, A. Atalar, “Design considerations for MMIC distributed amplifiers”, Electrical Conference, vol.2, pp.609-612, Apr. 1994 [23] B. Y. Banyamin, M. Berwick, “Analysis of the performance of four-cascaded single-stage distributed amplifiers”, IEEE Trans, vol. 48, pp. 2657-2663, Dec. 2000 [24] Behzad Razavi, Design of Analog CMOS Integrated Circuit, McGRAW-Hill International Edition, 2001 [25]Chinh H. Doan, Sohrab emami, Ali M. Niknejad, Robert W. Brodersen, “Millimeter-wave CMOS design,” IEEE J. Solid-State Circuits, vol. 40, no. 1, pp. 144-155, Jan. 2005. [26] M. Anowar Masud, Herbert Zirath, Mattias Ferndahl, Hans-Olof Vickes, “90 nm CMOS MMIC amplifier,” in RFIC Symp. Dig., pp. 201-204, June 2004. [27] Chieh-Min Lo; Chin-Shen Lin; Huei Wang, “A miniature V-band 3-stage cascode LNA in 0.13μm CMOS”, ISSCC, PP.1254-1263, Feb. 2006 [28] Brian A. Floyd, Scott K. Reynolds, Ullrich, Thomas Zwick, Troy Beulema, Brian Gaucher, “SiGe bipolar transceiver circuits operating at 60 GHz,” IEEE J. Solid-State Circuits, vol. 40, no. 1, pp. 156-167, Jan. 2005. [29] Junghyun Kim, Moon-Suk Jeon, Dongki Kim, Jinho Jeong, Youngwoo Kwon, “High-performance V-band cascode HEMT mixer and downconverter module,” IEEE Trans. Microwave Theory Tech., vol. 51, no. 3, pp. 805-810, Mar. 2003. [30] R. Lai, K. W. Chang, H. Wang, K. Tan, D. C. Lo, D. C. Streit, P. H. Liu, R. Dia, J. Berenz, “A high performance and low DC power V-band MMIC LNA using 0.1-um InGaAs/InAlAs/InP HEMT technology,” IEEE MWCL, vol. 3, no. 12, pp. 447-449, Dec. 1993. [31] J. M. Tanskanen,P. Kangaslahti, H. Ahtola, P. Jukkala, T. Karttaavi, M. Labdes, J. Varis, J. Tuovienen, “Cryogenic indium-phosphide HEMT low-noise amplifiers at V-band,” IEEE Trans. Microwave Theory Tech., vol. 48, no. 7, pp. 1283- 1286, Jul. 2000. [32]李易霖”以集總元件為匹配架構之良率分析與應用Q頻段之CMOS平衡式放大器研製 Yield analysis of lumped-element matching network and a Q-band CMOS balanced amplifier design ”, 國立台灣大學電信工程研究所碩士論文, 民國95年 [2006] [33] G. Gonzalez, Microwave transistor amplifiers analysis and design, 2nd ed: Prentice-Hall, Inc., 1997. [34]陳炳佑”三、五族電晶體模型與Ka頻段放大器設計 GaAs PHEMT device modeling and Ka-band MMIC amplifier design”, 國立台灣大學電機工程學研究所碩士論文, 民國91年 [2002] | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/29338 | - |
| dc.description.abstract | 在無線通訊蓬勃發展的年代，隨著技術的不斷提升，所需要的頻寬也越來越大。因此，向毫米波頻段發展是未來的趨勢。但是因為整合上的需求，雖然CMOS（金氧半互補式）製程在毫米波的表現不如GaAs（砷化鎵）等製程，不過因為IC整合上的需求，利用CMOS來研製射頻電路已經是不可避免的趨勢。
本論文的第一部份是利用0.13毫米CMOS製程來設計一個應用於V頻段的寬頻放大器。然後我們以第一顆放大器為基礎，加入了負阻概念，使其具有增益加強的效果，並驗證此方法是有效的。再來，我們利用一個設計失敗的多級串疊分佈式放大器來討論低頻震盪的產生原因與解決方法。 在本論文的第二個部份，我們試圖從匹配架構與匹配點來討論良率與它們之間的關係，並進一步討論在晶片中會影響良率的因素，並予以討論。 | zh_TW |
| dc.description.abstract | With the growing technique, wireless communication is more and more popular, and the desire of bandwidth is larger and larger. Therefore, the communication in MMW is approached. By the way, owing to the integration of chip, even if the performance of CMOS in MMW is worse than GaAs, we still try to use CMOS to design MMW front-end circuits.
The first part of this thesis is using 0.13-um CMOS process to design a V-band broadband amplifier. Then we using this amplifier to be the core, and apply the negative resistance in to the circuit to make it have the gain-boosting effect. After measurement, we can verify this topology do works. Finally, we try to find out the reason of low frequency oscillation of a CMSDA ( Cascode Multi-Stage Distributed Amplifier ) and the way to solve this problem. The second part of this thesis, we try to verify the relationship between yield, matching topology, and matching point, and discuss the parameters which may effect the yield in chip. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-13T01:04:51Z (GMT). No. of bitstreams: 1 ntu-96-R94942060-1.pdf: 2404593 bytes, checksum: adc18ff4a7ffa377bc154b01b0066da8 (MD5) Previous issue date: 2007 | en |
| dc.description.tableofcontents | 中文摘要 Ⅰ
英文摘要 Ⅲ 目錄 Ⅴ 圖樣索引 Ⅸ 表格索引 XV 第一章 簡介 1 1.1 動機…………………………………………………………………1 1.2 文獻導讀……………………………………………………………2 1.3 貢獻…………………………………………………………………3 1.4 論文摘要……………………………………………………………4 第二章 基本原理 5 2.1 通訊原理架構………………………………………………………5 2.1.1 Super Heterodyne 架構……………………………………5 2.1.2 Direct Conversion 架構…………………………………6 2.1.3 Self Heterodyne 架構……………………………………7 2.2 負阻架構…………………………………………………………8 2.2.1 串疊架構…………………………………………………8 2.2.2 常見的負阻架構…………………………………………9 2.3 放大器設計概念…………………………………………………11 2.3.1 穩定性分析………………………………………………11 2.3.2 功率增益…………………………………………………15 2.3.3 線性度……………………………………………………19 2.3.4 雜訊………………………………………………………23 2.4 分佈式放大器設計………………………………………………24 第三章 利用CMOS 0.13um製作之毫米波寬頻放大器 29 3.1 簡介………………………………………………………………29 3.2 建立模型………………………………………………………30 3.2.1 外質參數萃取……………………………………………31 3.2.2 本質參數萃取……………………………………………33 3.3 四級串疊毫米波寬頻放大器……………………………………34 3.3.1 電路設計…………………………………………………34 3.3.2 模擬結果…………………………………………………40 3.3.3 量測準備…………………………………………………44 3.3.4 解振結果…………………………………………………46 3.3.5 量測結果…………………………………………………49 3.3 加入負阻結構之高增益放大器…………………………………52 3.4.1 電路設計…………………………………………………52 3.4.2 模擬結果…………………………………………………58 3.4.3 量測準備…………………………………………………61 3.4.4 解振結果…………………………………………………63 3.4.5 量測結果…………………………………………………65 3.5 串疊多級分佈式放大器…………………………………………70 3.5.1 電路設計…………………………………………………70 3.5.2 模擬結果…………………………………………………72 3.5.3 量測準備…………………………………………………73 3.5.4 解振結果…………………………………………………75 3.5.5 量測結果…………………………………………………76 3.5.6電路失敗原因探討………………………………………78 3.5.7 未來工作…………………………………………………84 3.6 結論……………………………………………………………84 第四章 良率分析 89 4.1 概念………………………………………………………………89 4.2利用集總元件設計之低雜訊放大器良率分析……………………93 4.2.1 利用F架構設計放大器的良率分析與驗證………………94 4.2.2利用E架構設計放大器的良率分析與驗證………………95 4.3利用傳輸線設計之低雜訊放大器良率分析………………………96 4.4 結論………………………………………………………………98 第五章 總結 99 參考文獻 101 | |
| dc.language.iso | zh-TW | |
| dc.subject | 放大器 | zh_TW |
| dc.subject | 負阻 | zh_TW |
| dc.subject | 良率 | zh_TW |
| dc.subject | 高增益 | zh_TW |
| dc.subject | amplifier | en |
| dc.subject | negative resistance | en |
| dc.subject | high gain | en |
| dc.subject | yield | en |
| dc.title | 利用CMOS 0.13-μm製程並加入負阻架構之高增益放大器研製與良率分析 | zh_TW |
| dc.title | The Design of A High Gain Amplifier with Negative Resistance in CMOS 0.13-μm and Yield Analysis | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 95-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 蔡政翰(Jeng-Han Tsai),張鴻埜(Hong-Yeh Chang) | |
| dc.subject.keyword | 負阻,高增益,放大器,良率, | zh_TW |
| dc.subject.keyword | negative resistance, high gain, amplifier, yield, | en |
| dc.relation.page | 104 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2007-07-24 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電信工程學研究所 | zh_TW |
| 顯示於系所單位： | 電信工程學研究所 | |
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