請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/28824
完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 宋家驥(chia-chi Sung) | |
dc.contributor.author | Ming-Feng Lin | en |
dc.contributor.author | 林明鋒 | zh_TW |
dc.date.accessioned | 2021-06-13T00:24:33Z | - |
dc.date.available | 2012-07-31 | |
dc.date.copyright | 2007-07-31 | |
dc.date.issued | 2007 | |
dc.date.submitted | 2007-07-25 | |
dc.identifier.citation | [1] K. M. Lakin, J. S. Wang and A. R. Landin, “Aluminum Nitride Thin Film and Composite Bulk Wave Resonators” ,IEEE 36th Annual Frequency Control Symposium -1982, pp.517-524.
[2] K. M. Lakin and G. R. Kline,“High Q Microwave Acoustic Resonators and Filters”,1993 IEEE MTT-S Digest, pp.1517-1520. [3] R. Ruby and P. Merchant, “Micromachined thin film bulk acoustic resonators” 1994 IEEE International Frequency Control Symposium, Page(s):135-138. [4] R. Ruby, P. Bradley, J. D. Larson and Y. Oshmyansky, “PCS 1900 MHz duplexer using thin film bulk acoustic resonators (FBARs)” ,Volume 35, Issue 10, 13 May 1999 Page(s):794 -795. [5] G. L. Cot’e and R. M. Lec, “Emerging biomedical sensing technologies and their applications ” ,IEEE Sens. J., vol. 3, pp. 251-266, June 2003. [6] S. W. Wenzel and R. M. White, “Analytic comparison of the sensitivities of bulk-wave, surface-wave, and flexural plate-wave ultrasonic gravimetric sensors” Appl. Phys Lett. , 54(20), 15 May 1989, pp.1976-1978. [7] H. Zhang and E. S. Kim, “Air-backed Al/ZnO/Al Film Bulk Acoustic Resonator without Any Support Layer” , IEEE International Frequency Control Symposium, New Orleans, LA, May 29-31, 2002, pp. 20-26. [8] H. Zhang and E. S. Kim, “Vapor and liquid mass sensing by micromachined acoustic resonator” ,IEEE Micro Electro Mechanical Systems Int Conf MEMS’ 03, pp 470-473, Kyoto, 2003. [9] H. Zhang and E. S. Kim, “Micromachined Acoustic Resonant Mass Sensor” Journal of Microelectromechanical Systems, Vol. 14, NO. 4, pp 699-706, August 2005. [10] H. Zhang and M. S. Marma, “Mercury Ion Sensing Film-Bulk-Acoustic Resonator Mass Sensor ” ,IEEE Sens. J., vol. 2, pp. 203-206, June 2005. [11] Jan Weber and W. M. Albers, “Shear mode FBARs as highly sensitive liquid biosensors” ,Sensors and Actuators A 128 (2006) , pp. 84-88. [12] Jan Weber and Mathias Link ,“Sensor for Ambient Pressure and Material Strains using a Thin Film Bulk Acoustic Resonator”,2005 IEEE Ultrasonics Symposium, pp. 1258-1261. [13] J. F. Rosenbaum, “Bulk Acoustic Wave Theory and Devices” 1988, Artech House, U.S.A. [14] R. Ruby, P. Bradley, Y. Oshmyansky, “Thin film bulk wave acoustic resonators (FBAR) for wireless applications” ,2001 IEEE Ultrasonics Symposium, Volume 1, Page(s):813 - 821. [15] 吳朗,電子陶瓷-壓電,全欣圖書公司,1994年12月 [16] K. M. Lakin and J. S. Wang, “Acoustic bulk wave composite resonators” ,Appl. Phys. Lett., Vol. 39, No. 3, Feb. 1981,pp. 125-128. [17] K. M. Lakin, “Thin Film Resonator Technology” ,IEEE transactions on ultrasonics, ferroelectrics, and frequency control, vol. 52, no. 5, may 2005, pp. 707-716. [18] Robert Weigel, David P. Morgan, “Microwave Acoustic Materials, Devices, and Applications” ,2002 IEEE, Transactions on Microwave Theory and Techniques, Vol. 50. No. 3, pp. 738-749. [19] Robert Aigner “MEMS in RF-Filter Applications : Thin Film Bulk Acoustic Wave Technology” ,The 13th lntemational Conference on Solid-state Sensors, Actuators and Microsystems, 2005, pp. 5-8. [20] K. M. Lakin, K. T. McCarron, and R. E. Rose, “Solidly mounted resonators and filters” ,in Proc. IEEE Ultrason. Symp., 1995, pp.905-908. [21] R. Aigner, J. Ella, H. J. Timme, L. Elbrecht, W. Nessler, and S. Marksteiner, “Advancement of MEMS into RF-filter applications” ,in Proc. Internat. Electron Dev. Meet., 2002, pp. 875-879. [22] Robert Aigner, “RF-MEMS Filters Manufactured on Silicon: Key Facts about Bulk-Acoustic-Wave Technology” ,Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on 9-11 April 2003 Page(s):157 -161. [23] S. V. Kirshnawary, J. F. Rosenbaum, S. S. Horwitz, and R. A. Moore,“Film bulk acoustic wave resonator technology” ,in Proc. IEEE Ultrason. Symp., vol. 1, 1990, pp. 529-536. [24] S. M. Sze, “Semiconductor sensors”, Wiley Interscience, New York(1994). [25] 蔣源峰,體聲波共振器與濾波器之研究,義守大學電機工程研究所碩士論文,(2003)。 [26] Hasnain Lukdawala and Eun Sok Kim,”Simple Post-Processing Technique to Tune Resonant Frequency of Film Bulk Acoustic Resonators and Stacked Crystal Filters” ,1998 IEEE International Frequency Control Symposium, pp.831-835. [27] Tay Kok-Wan, Huang Cheng-Liang, Wu Long, “Influence of Piezoelectric Film and Electrode Materials on Film Bulk-Wave Resonator Characteristics ” Japanese Journal of Applied Physics, 2004 ,43(3):1122-1126. [28] Hong Xiao, “Introduction to Semiconductor Manufacturing Technology” Prentice Hall, 2001. [29] John D. Larson and Paul D. Bradley, “Modified Butterworth-Van Dyke Circuit for FBAR Resonators and Automated Measurement System” ,2000 IEEE Ultrasonics Symposium, pp.863-868. [30] Brian Chapman, “Glow Discharge Processes”, John Wiley and Sons, New York, 1980. [31] 王建義,薄膜工程學,全華科技圖書股份有限公司,2003年1月。 [32] John A. Thornton, J. Vac. Sci. Technol. , 11 (4) (1974) 666. [33] H. L. Hartnagel, A. K. Jain and C. Jagadish, “Semiconducting Transparent Thin Films”, published by Institute of Physics Publication, 1995, p.17. [34] H. Hawamoto, R. Konishi, H. Harada and H. Sasakura, “Springer Proceedings in Physics”, 38 (1989) 314. [35] C.X. Qiu and I. Shih, Sol. Energy Mater. 13 (1986) 75. [36] A. Sarkar, S. Ghosh, S. Chaudhury and A. K. Pal, Thin Solid Films 443(1991) 2255. [37] F. D. Paraguay, J. Morales, W. L. Estrada, E. Andrade, M. M. Yoshida, Thin Solid Films 366 (2000) 16. [38] L. Yi, Y. Hou, H. Zhao, D. He, Z. Xu, Y. Wang and X. Xu, “The photo- and electro -luminescence properties of ZnO:Zn thin film” ,Displays, vol. 21, pp. 147-149, 2000. [39] Y. H. Lee, M. H. Song and B. K. Ju, “Thin film phosphor prepared by physical vapor deposition for field emission display application” ,J. Vac. Sci. Technol. B, vol. 15(2), pp.512-515, 1997. [40] Y. Yoshino, T. Makino, Y. Katayama, and T. Hata, “Optimization of Zinc oxide thin film for surface acoustic wave filters by radio frequency sputtering” ,Vacuum 59, pp. 538, 2000. [41] M. B. Assouar, O. Elmazria, R. J. Rioboo, F. Sarry, and P. Alnot, “Modelling of SAW filter based on ZnO/diamond/Si layered structure including velocity dispersion” Applied surface science 164, pp. 200-204, 2000. [42] S. H. Lim, D. Shindo, H. B. Kang, and K. Nakamura, “Structural characterization of epitaxial ZnO films grown on (0001)Al2O3 by electron cyclotron resonance-assisted molecular beam epitaxy” ,J. Crystal Growth 225, pp. 208-213, 2001. [43] S. H. Park, B. C. Seo, and G. W. Yoon, ”Two step deposition process of piezoelectric ZnO film and its application for film bulk acoustic resonators” ,J. Vac. Sci. Technol.A 18(5), pp. 2432 , 2000. [44] John L. Vossen. and Werner Kern, “Thin Film Process”, Academic Press, (1991)134. [45] R. W. Berry, P. M. Hall and M. T. Harris, “Thin Film Technology” ,1980, pp.201. [46] Bean K E, “Anisotropic etching of silicon,” IEEE Trans Electron Devices, 1975,25(10) :1178. [47] Camon H. and Moktadir Z, “New trends in atomic scale simulation of wet chemical etching of silicon with KOH” ,Materials Scence and Engineering B,1996,37(1):142 [48] Mitsuhiro Shikida and Kazuo Sato, ”Differences in anisotropic etching properties of KOH and TMAH solutions” ,Sensors and Actuators A (80)2000.pp179-188. [49] 林素霞,氧化鋅薄膜的特性改良及應用之研究,國立成功大學材料科學及工程研究所博士論文,(2003)。 [50] Su-Shia Lin, Jow-Lay Huang, ”Effect of substrate temperature on the properties of Ti-doped ZnO films by simultaneous rf and dc magnetron sputtering Materials “,Chemistry and Physics, Volume 90, Issue 1, 15 March 2005, Pages 22-30. [51] 李其源,濕蝕刻晶片厚度即時監控之新穎方法,國立台灣大學機械工程研究所博士論文,(2004)。 [52] F. Sinoki and A. Itoh, “Mechanism of RF Reactive Sputtering” ,J. Appl. Phys., vol. 46, pp.3381-3384, 1975. [53] E. M. Bachari, G. Baud, S. Ben Amor and M. Jacquet, “Structural and optical properties of sputtered ZnO films” ,Thin Solid Films, vol. 348, pp. 165, 1999. [54] S. B. Krupanidhi and M. Sayer, “Position and pressure effects in rf magnetron reactive sputter deposition of piezoelectric zinc oxide”, J. Appl. Phys., vol. 56, pp. 3308, 1984. [55] 劉吉卿,以兩階段濺鍍法沉積氧化鋅壓電薄膜於薄膜體聲波共振器之應用,國立中山大學電機工程學系碩士論文,(2006)。 [56] P. M. Verghese and D. R. Clarke, “Surface textured zinc oxide films” ,J. Mater. Res., Vol. 14, No.3, pp. 1039, 1999. [57] http://www.purdue.edu/REM/rs/sem.htm [58] 蔣松濤,薄膜體聲波濾波器的材料、設計及應用,材料導報,2006年11月 第20卷 第11期。 [59] Ü. Özgür, Ya. I. Alivov and C. Liu, “A comprehensive review of ZnO materials and devices”, Journal of Applied Physics 98, 041301 2005. [60] T. Yokoyama and T. Nishihara, “New Electrode Material for Low-loss and High-Q FBAR Filters”, 2004 IEEE International Ultrasonics, Ferroelectrics,and Frequency Control Joint 50th Anniversary Conference, pp 429-432. [61] Tapani Makkonen, Antti Holappa, and Martti M. Salomaa, “3D FEM modeling of composite BAW resonators”, 2000 IEEE Ultrasonics Symposium,pp 893-896. [62] Tapani Makkonen and Antti Holappa, “Finite Element Simulations of Thin-Film Composite BAW Resonators”, 2001 IEEE transactions on Ultrasonics, Ferroelectrics, and frequency control, vol. 48, no. 5,pp 1241-1258. [63] Qing-Xin Su, Paul Kirby and Eiju Komuro,“Thin-Film Bulk Acoustic Resonators and Filters Using ZnO and Lead-Zirconium-Titanate Thin Films”, 2001 IEEE Transactions on Microwave Theory and Techniques, vol 49, no. 4, pp 769-778. [64] M. Link, M. Schreiter and J. Weber, “C-axis inclined ZnO films deposited by reactive sputtering using an additional blind for shear BAW devices”, 2005 IEEE Ultrasonics Symposium, pp 202-205. [65] V. I. Fedosov, V. I. Aniiimkin and I. M. Kotelyanskii, “Analysis of acoustic waves in multilayers using compound matrices”, 1996 IEEE Ultrasonics Symposium, pp207-212. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/28824 | - |
dc.description.abstract | 本論文所製作之薄膜體聲波振器由Al/ZnO/Al/Si3N4等不同之薄膜組成,沉積在矽基板(100)上,先利用低壓化學氣相沉積法在矽晶圓兩邊沉積低應力之氮化矽薄膜,一面用來當作薄膜體聲波共振器之支撐層,另一面用來當作氫氧化鉀蝕刻之防護罩,在壓電能作用區下方製作出腔體(cavity),再利用射頻磁控濺鍍法濺鍍壓電層氧化鋅,上下電極使用熱蒸鍍法沉積製作,最後再使用反應式離子蝕刻將腔體內之殘餘矽基板去除,讓共振器下方形成晶界與空氣之介面。
利用X光繞射儀(X-Ray Diffraction, XRD)、掃描式電子顯微鏡(Scanning Electron Microscopy, SEM),針對壓電層氧化鋅作檢測,可發現此薄膜具有C軸(002)之擇優取向,及良好之圓柱狀結構。 最後完成的薄膜體聲波共振器元件之壓電能做作用面積為200×200 μm2,由壓電層氧化鋅、支撐層氮化矽和上下電極鋁所構成,厚度分別為1.54μm、0.2μm、0.1μm、0.1μm。經模擬計算結果,共振頻率為1.86GHz;量測結果為1.27GHz。而實驗結果與討論可提供實驗室一個有價值的參考在未來發展薄膜體聲波共振器之相關研究上。 | zh_TW |
dc.description.abstract | In this thesis, the Film Bulk Acoustic Resonator (FBAR) has been fabricated by stacking various layers of Al/ZnO/Al/Si3N4 on a silicon substrate (100). The low-stress silicon nitride films were deposited on both side of the substrate by Low-pressure chemical vapor deposition (LPCVD). The upper Si3N4 layer served as a support membrane for the FBAR cantilever, while the bottom layer acted as an etching mask and selectively etched in a KOH (potassium hydroxide) wet etching process to create a cavity under the piezoelectric-active area. The piezoelectric zinc oxide (ZnO) thin film was deposited by reactive RF magnetron sputtering. The bottom and top electrodes are deposited by using thermal evaporation. The underside of the residual silicon was then removed using reactive ion etching (RIE) etching process to create a cavity under the piezoelectric-active area to form a crystal/air interface beneath the resonator.
The ZnO film was investigated using x-ray diffractometer (XRD) and scanning electron microscopy (SEM) techniques. The ZnO film showed strongly preferred orientation towards the c-axis, well-textured columnar structure. The FBAR device piezoelectric-active area was 200×200 μm2 which consisted the ZnO film, low-stress Si3N4 membrane, top and bottom Al electrodes with thicknesses of 1.54μm, 0.2μm, 0.1μm, and 0.1μm, respectively. Simulated resonant frequency is 1.86GHz, and measured one is 1.27GHz. The experimental results provided a valuable reference for the future development of FBAR. | en |
dc.description.provenance | Made available in DSpace on 2021-06-13T00:24:33Z (GMT). No. of bitstreams: 1 ntu-96-R94525011-1.pdf: 3454482 bytes, checksum: 1b960132631af46dda3add890307b316 (MD5) Previous issue date: 2007 | en |
dc.description.tableofcontents | 中文摘要.............................................i
英文摘要.............................................ii 目錄.................................................iv 圖目錄...............................................vii 表目錄...............................................x 第一章 導論.........................................1 1.1文獻回顧..........................................1 1.2研究動機與目的....................................4 1.3論文架構..........................................5 第二章 原理.........................................6 2.1 聲波運動方程式...................................6 2.2 壓電效應及方程式.................................8 2.2.1正逆壓電效應................................9 2.2.2壓電方程式..................................9 2.3 薄膜體聲波共振器原理.............................11 2.3.1體聲波技術之關鍵參數........................12 2.4 等效電路原理.....................................14 2.4.1 Mason等效電路..............................14 2.4.2傳輸矩陣法..................................17 2.5 電漿理論.........................................21 2.6 薄膜成長原理.....................................23 2.6.1 薄膜表面及截面結構.........................24 2.6.2 氧化鋅薄膜結構與特性.......................24 2.6.3 低壓化學氣相沉積(LPCVD).......... .........25 2.6.4 電漿輔助化學氣相沉積(PECVD)................25 2.6.5 射頻磁控濺鍍系統...........................25 2.7 蝕刻原理.........................................26 2.7.1 氫氧化鉀(KOH)濕蝕刻........................27 2.7.2 反應式離子蝕刻(RIE)........................27 2.8 量測方法.........................................27 2.8.1 掃描式電子顯微鏡分(SEM)....................28 2.8.2 X光繞射分析(XRD)..........................28 第三章 元件製程步驟與光罩設計.......................29 3.1 製程步驟.........................................29 3.2 元件光罩設計.....................................31 第四章 實驗結果與討論...............................32 4.1 黃光製程參數測試.................................32 4.1.1 光阻塗佈參數測試...........................32 4.1.2 曝光顯影參數測試...........................33 4.2 共振器腔體蝕刻...................................34 4.2.1 氫氧化鉀腔體濕蝕刻濕蝕刻...................35 4.2.2 反應式離子蝕刻殘餘矽基板...................36 4.3 薄膜沉積.........................................36 4.3.1 下電極鋁薄膜蒸鍍...........................37 4.3.2 壓電層氧化鋅薄膜濺鍍.......................37 4.3.3 上電極鋁薄膜蒸鍍...........................39 4.4 共振器結構特徵分析...............................40 4.4.1 表面輪廓儀析厚度量測.......................40 4.4.2 壓電層截面、上視圖與矽基板腔體圖...........40 4.4.3 壓電層結晶取向檢測.........................41 4.5 共振器電性量測與模擬分析.........................41 第五章 結論.........................................43 參考文獻.............................................88 | |
dc.language.iso | zh-TW | |
dc.title | 微機電共振器之製作與分析 | zh_TW |
dc.title | Fabrication and analysis of MEMS resonator | en |
dc.type | Thesis | |
dc.date.schoolyear | 95-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 吳文中(wen-chung Wu),賴文斌(wen-pin Lai),陳長盈(chang-ying Chen) | |
dc.subject.keyword | 薄膜體聲波共振器,氧化鋅,射頻磁控濺鍍法,氫氧化鉀,反應式離子蝕刻, | zh_TW |
dc.subject.keyword | FBAR,zinc oxide,RF magnetron sputtering,KOH,RIE, | en |
dc.relation.page | 94 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2007-07-27 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 工程科學及海洋工程學研究所 | zh_TW |
顯示於系所單位: | 工程科學及海洋工程學系 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-96-1.pdf 目前未授權公開取用 | 3.37 MB | Adobe PDF |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。