半導體光電元件穩定度與可靠度之研究

Abstract

隨著科技的日新月異，顯示科技的不斷進步，現今世面上主流的顯示技 術為液晶顯示器，而其中主動式矩陣型液晶顯示器（AM-LCD）大多利用薄膜 電晶體來驅動及切換 。不過目前薄膜電晶體任究無法滿足液晶顯示器所須要的 高切換速度與高驅動電壓，因此近年來，針對薄膜電晶體的特性研究便一一出 改善，尤其對於研發新的材料，以取代現今以矽為主的製程。 以矽為通道的薄膜電晶體有幾個主要缺點：電子遷移速率低，不透光，而 氧化鋅有著高電子遷移速率，透光，低溫製程，可應用在軟板上等優點，所以 被看好成為下一代薄膜電晶體的材料，然而其元件的穩定度與可靠度現今並不 良好，本研究中，我們在室溫以濺鍍法沉績氧化鋅薄模，以製成薄膜電晶體， 並進行其元件穩定度與可靠度之分析，首先量測基本電特性，比較不同製程條 件下的特性，然後施加電應力，量測其電特性對時間的變化。希望透過本篇研 究了解其物理機制與改善法，進一步提高其元件的穩定度與可靠度，以提高其 應用價值。

Firstly, silicon based thin film transistors are commonly used in active-matrix LCD’s (AMLCD’s) as pixel switches or drivers. However, the performance of conventional TFT is far from satisfactory to meet the high speed and current drive requirements for the application of LCD. In recent years, a lot of efforts have been spent to improve the processes and devices structures of TFTs to obtain better performance. Finding new materials, such as ZnO. The Si-based TFTs have several deficiencies, such as low electron mobility、 opaque and high temperature process. The ZnO is a new material has the high mobility and crystalloid. In this research, a room temperature process method is proposed to obtain high quality ZnO thin films for TFTs. By changing the process conditions, and measurement the electrical property shift with time. We want to obtain the reliability and stability and to analysis the mechanism.