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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 黃建璋 | |
| dc.contributor.author | Tzu-Pu Lin | en |
| dc.contributor.author | 林子樸 | zh_TW |
| dc.date.accessioned | 2021-06-13T00:20:15Z | - |
| dc.date.available | 2007-07-27 | |
| dc.date.copyright | 2007-07-27 | |
| dc.date.issued | 2007 | |
| dc.date.submitted | 2007-07-27 | |
| dc.identifier.citation | [1] Donald A. Neamen, “Semiconductor Physics and Devices 3rd”, McGraw Hill, p.486–495.
[2] A. C. Tickle, “Thin-Film Transistors”. New York: John Wily and Sons, 1969. [3] C.C. Liu, Y.S. Chen and J.J. Huang, “High-performance ZnO thin-film transistors fabricated at low temperature on glass substrates”, Electronics letters, 2006. [4] Master thesis, Rick E. Presley, “Transparent electronics: thin-film transistors and integrated circuits”, Chapter 4, Oregon State University, 2006. [5] K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano and Hi. Hosono, “Room-temperature fabrication of transparent flexible thin- film transistors using amorphous oxIdse semiconductors”, Nature, 2004. [6] N. L. Dehuff, E. S. Kettenring, D. Hong, H. Q. Chiang, J. F. Wager, R. L. Hoffman, C.-H. Park, and D. A. Keszler, “Transparent thin- film transistors with zinc indium oxIdse channel layer,” Journal of Applied Physics, 2005. [7] G. F. Boesen and J. E. Jacobs, “ZnO Field-Effect Transistor”, Proceeding Letters, IEEE, 1968. [8] S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, and T. Steiner “Recent advances in processing of ZnO” Journal of Vacuum Science and Technology, May/June, 2004. [9] 陳永芳，物理會刊 11 卷3 期(1989) 289-295 [10] H. L. Hartnagel, A. K. Jain and C. Jagadish, “Semiconducting Transparent Thin Films”, published by Institute of Physics Publication, 1995, Chap. 3. [11] Yasuhiro Igasaki and Hiromi Saito, Thin SolIds Films, 199 (1991) 223 [12] Takashi Komaru at al., Jpn. J. Appl. Phys. Part I, 38 (1999) 5796 [13] J. R. Chelikowsky, SolIdstate Commun, 122 (1997) 351. [14] J. E. Jaff, R. Pandey, and A. D. Kunz, J. Phys. Chem. SolIds, 52 (1991) 755. [15] J. W. Tomm, B. Ullrich, X. G. Qiu, Y. Segawa, A. Ohtomo and H. Koinuma, J. Appl. Phys, 87 (2000) 1884. [16] H. Kim, Y. Lee, Y. Roh, J. Jung, M. Lee and H. Kwon, IEEE Ultrasonic Symposium, (1998) 323. [17] L. J. Meng and M P dos Santos, 46 (1995) 1001.2 7 [18] Y. Yoshino, T. Makino, Y. Katayama and T. Hata, 59 (2000) 538. [19] H. Ieki and M. Kaota, IEEE Ultrasonic Symposium (1999) 281. [20] M. S. Wu, W. C. Shin and W. H. Tsai, J. Phys. D: Appl. Phys. 31 (1998) 943. [21] M. Y. Han and J. H. Jou, Thin SolIds Films 260 (1995) 58. [22] 張玉華，科儀新知 12 卷1 (1991) 94 [23] J. L Vossen, Physics of Thin Films, 9 (1977) 1 [24] M. Nisha, S. Anusha, Aldrin Antony, R. Manoj, M. K. Jayaraj, “Effect of substrate temperature on the growth of ITO thin films”, Applied Surface Science, 2005. [25] A. Mansingh, C.V.R.Vasant Kumar, “Properties of RF-sputtered ITO films on substrates above and below the virtual source”, Journal of Physics D: Applied Physics, 1989. [26] W.-F. Wu, B.-S. Chiou, S.-T. Hsieh, “Effect of sputtering power on the structural and optical properties of RF magnetron sputtered ITO films”, Semiconductor Science and Technology, 1994. [27] Y. Hu, X. Diao, C. Wang, W. Hao, T. Wang, “Effects of heat treatment on properties of ITO films prepared by rf magnetron sputtering”, Vacuum, 2004. [28] M. J. Powell, C. Van Berkel, A. R. Franklin, S. C. Deane, and W. I. Milne, Phys. Rev. B 45, 4160 (1992). [29] P. G?rrn, etc,” Stability of transparent zinc tin oxIdse transistors under bias stress” Appl. Phys. Lett. 90, 063502 (2007) [30] R. B. M. Cross and M. M. De Souza,” The Impact of Fermi Pinning on Thermal Properties of the Instabilities in ZnO TFTs” ,Mater. Res. Soc. Symp. Proc. Vol. 957 2007 [31] R. B. Werhspohn, S. C. Deane, IDS. French, I. Gale, J. Hewett, and M. J.Powell, J. Appl. Phys. 87, 144 (2000). [32] M. J. Powell, IEEE Trans. Electron Devices 36, 2753 (1989). [33] P. F. Carcia , R. S. McLean, M. H. Reilly, ”OxIdse engineering of ZnO thin-film transistors for flexible electronics” Journal of the SIDS 13/7, 2005 [34] G Bersuker, P Zeitzoff, G Brown, and H R Huff, “Dielectrics for future transistors,” Materials Today 7, 26–33 (January 2004). [35] B-K Kim, O Kim, H-J Chung, J-W Chang, and Y-M Ha, “Recoverable resIdsual image induced by hysteresis of thin film transistors in active matrix organic light emitting diode displays,”Jpn J Appl Phys 43,L482–L485 (2004). [36] P. Barquinha＊, E. Fortunato, A. Gon?alves, A. Pimentel, A. Marques, L. Pereira, R. Martins. Influence of time, light and temperature on the electrical properties of zinc oxIdse TFTs. P. Barquinha et al. / Superlattices and Microstructures 39 (2006) 319–327 | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/28739 | - |
| dc.description.abstract | 隨著科技的日新月異，顯示科技的不斷進步，現今世面上主流的顯示技
術為液晶顯示器，而其中主動式矩陣型液晶顯示器（AM-LCD）大多利用薄膜 電晶體來驅動及切換 。不過目前薄膜電晶體任究無法滿足液晶顯示器所須要的 高切換速度與高驅動電壓，因此近年來，針對薄膜電晶體的特性研究便一一出 改善，尤其對於研發新的材料，以取代現今以矽為主的製程。 以矽為通道的薄膜電晶體有幾個主要缺點：電子遷移速率低，不透光，而 氧化鋅有著高電子遷移速率，透光，低溫製程，可應用在軟板上等優點，所以 被看好成為下一代薄膜電晶體的材料，然而其元件的穩定度與可靠度現今並不 良好，本研究中，我們在室溫以濺鍍法沉績氧化鋅薄模，以製成薄膜電晶體， 並進行其元件穩定度與可靠度之分析，首先量測基本電特性，比較不同製程條 件下的特性，然後施加電應力，量測其電特性對時間的變化。希望透過本篇研 究了解其物理機制與改善法，進一步提高其元件的穩定度與可靠度，以提高其 應用價值。 | zh_TW |
| dc.description.abstract | Firstly, silicon based thin film transistors are commonly used in active-matrix
LCD’s (AMLCD’s) as pixel switches or drivers. However, the performance of conventional TFT is far from satisfactory to meet the high speed and current drive requirements for the application of LCD. In recent years, a lot of efforts have been spent to improve the processes and devices structures of TFTs to obtain better performance. Finding new materials, such as ZnO. The Si-based TFTs have several deficiencies, such as low electron mobility、 opaque and high temperature process. The ZnO is a new material has the high mobility and crystalloid. In this research, a room temperature process method is proposed to obtain high quality ZnO thin films for TFTs. By changing the process conditions, and measurement the electrical property shift with time. We want to obtain the reliability and stability and to analysis the mechanism. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-13T00:20:15Z (GMT). No. of bitstreams: 1 ntu-96-J94941017-1.pdf: 2892798 bytes, checksum: 0947be81d904b797118344541f046440 (MD5) Previous issue date: 2007 | en |
| dc.description.tableofcontents | 第一章 簡介
1-1 論文架構.............................................................................................1 1-2 電晶體簡介..........................................................................................1 1-3 材料簡介............................................................................................10 1-4 薄膜電晶體穩定度與可靠度之研究背景簡介.................................16 第二章 元件製作與量測架設 2-1 簡介....................................................................................................22 2-2 元件結構............................................................................................22 2-3 製作流程............................................................................................23 2-4 量測架構………………………………………….….……………..24 第三章 氧化鋅薄膜電晶體之可靠度與穩定度分析 3-1 氧化鋅薄膜電晶體之特...................................................................25 3-2 氧化鋅薄膜電晶體之可靠度與穩定度分析...................................27 3-3 通道長度與寬度對穩定性的影響...................................................31 第四章 通道摻雜鎵之穩定度比較 4-1 通道摻雜鎵對薄膜電晶體電性表現之影響...................................33 4-2 通道摻雜鎵對穩定度與可靠度之影響...........................................34 | |
| dc.language.iso | zh-TW | |
| dc.subject | 穩定度 | zh_TW |
| dc.subject | 氧化鋅 | zh_TW |
| dc.subject | 薄膜電晶體 | zh_TW |
| dc.subject | 可靠度 | zh_TW |
| dc.subject | TFT | en |
| dc.subject | stability | en |
| dc.subject | reliability | en |
| dc.subject | ZnO | en |
| dc.title | 半導體光電元件穩定度與可靠度之研究 | zh_TW |
| dc.title | Reliability and Stability of Electro-Optical semiconductor
Device | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 95-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 吳志毅,陳奕君 | |
| dc.subject.keyword | 氧化鋅,薄膜電晶體,可靠度,穩定度, | zh_TW |
| dc.subject.keyword | ZnO,TFT,reliability,stability, | en |
| dc.relation.page | 42 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2007-07-27 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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