電場導向矽奈米線之電性與歐姆接觸研究

Abstract

本論文研究利用化學氣相沉積法經由VLS成長機制來成長電場導向及自組裝之未摻雜及微量摻雜的矽奈米線。並觀察到矽奈米線的成長會導向於外加相鄰電極間的局部電場並且跨接兩端電極。此外，我們發現鈦為一種適合電場導向成長矽奈米線的電極材料，並且能在經過兩階段快速熱退火處理後使電極與矽奈米線之間形成歐姆接觸。最後，藉由聚焦離子束輔助白金沉積，白金電極成功的被圖案化在矽奈米線上。再結合Conductive-AFM和TLM量測，可得到矽奈米線之電性以及鈦電極與矽奈米線之間的接觸電阻。

Electric-field-directed growth and self-assembly of undoped and lightly p-type doped silicon nanowires by chemical-vapor deposition via the vapor-liquid-solid (VLS) growth mechanism in a low pressure chemical vapor deposition (LPCVD) system is demonstrated. The nanowires appeared to align with the localized DC electric field and grew across the gap between two electrodes. Moreover, it is found that titanium is an adequate electrode material for electric-field-directed growth of silicon nanowires, and good ohmic contact between SiNWs and Ti electrode is achieved by means of two stage rapid thermal anneal. With the application of focus ion beam assisted platinum deposition, the platinum pad is patterned on the silicon nanowire. Combined with Conductive-AFM and transmission line measurement, the measurement of the electrical characteristics of silicon nanowire and contact resistance between nanowire and Ti electrode is carried out.