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標題: | 電阻式記憶體SPICE模型製作與薄膜電晶體雜訊
及太陽能電池效率分析 Development of Resistive Random Access Memory SPICE Model and Analysis of Thin Film Transistor Noise and Solar Cell Efficiency |
作者: | Shang-Chi Yang 楊尚輯 |
指導教授: | 劉致為 |
關鍵字: | 電阻式記憶體,相變化記憶體,薄膜電晶體,螺旋電感,太陽能電池, resistive random access memory,phase change memory,TFT,spiral inductors,solar cell, |
出版年 : | 2009 |
學位: | 碩士 |
摘要: | 在本論文中,第一部分為電阻式記憶體 (RRAM) SPICE 模型的建立。RRAM屬於非揮發性記憶體中的一種,利用外加電壓可在高電阻態 (high resistance state, HRS) 與低電阻態 (low resistance state, LRS) 間切換以記錄邏輯1與0,此種記憶體具有低操作電壓與功率 (寫入電壓 < 3 V, 讀取電壓 ~ 0.1 V)、高度微縮性 (結構簡單,為兩層金屬電極夾二元過鍍金屬氧化物)、可多階操作 (可大幅提升記憶體密度)、超快讀取與寫入速度 (< 10 ns)、高耐用度 (> 10 年)、可靠之資料保存能力等優勢,其與相變化記憶體 (phase change memory, PCM) 同為次世代非揮發性記憶體中的主要競爭者。對產業界而言,積體電路量產之前必須對電路進行模擬驗證,以確保成功,因此,本論文將利用業界普遍採用之HSPICE模擬軟體建立RRAM之SPICE電路模型,對現今動輒數百萬記憶體單元之記憶體產品而言,簡易之SPICE電路模型可大幅提升模擬效率。第二部份對薄膜電晶體的雜訊做理論上的分析並對實驗結果提出一個的簡單物理模型,且利用Eldo模擬軟體建立SPICE 模型,作為電路設計時模擬用。並使用TFT製程模擬RFID tag.第三部份為在玻璃基板上製作螺旋電感,第四部份為分析太陽能電池模組效率衰退與元件均勻度的關係。 In this thesis, the first part is developing the Resistive random access memory SPICE model. Resistive random access memory (RRAM) is one of the many types of nonvolatile memory, which utilizes the switching between high resistance state (HRS) and low resistance state (LRS) by the applied voltage to record logic 1 and logic 0. The RRAM boasts of low operating voltage and low power (program voltage < 2 V, read voltage ~ 0.1 V), good scalability (because of its simple structure, which is usually a binary transition-metal oxide sandwiched by two metal electrodes), multilevel cell (MLC) operation (strongly boost the density of memory), ultra-fast read and program speed (< 10 ns), high endurance (> 10 years), and reliable data retention time. The RRAM, as well as phase change random access memory (PCRAM), are main competitors in next-generation nonvolatile memory. To the industrial sector, it is imperative to verify the circuit design before mass-producing the integrated circuit products, which ensures the success of the tapeout. Therefore, we will use commercial HSPICE software to develop an RRAM SPICE circuit model. A compact SPICE model will greatly enhance the simulation speed of today’s memory product composed of several millions unit cells. The second part is the physical analysis of low frequency of thin film transistors. We propose a simple physical model to explain the experimented results and develop a spice model with Eldo applying to circuit simulation. In addition, gives a simple RFID tag simulation using TFT process. The third part is about the spiral inductors fabricated on glass substrate. Finally, we analyze the efficiency degradation of solar cell modules due to cell non-uniformity distribution. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/25871 |
全文授權: | 未授權 |
顯示於系所單位: | 電子工程學研究所 |
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