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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/25433完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 莊東漢 | |
| dc.contributor.author | Yu-Chih Liu | en |
| dc.contributor.author | 劉育志 | zh_TW |
| dc.date.accessioned | 2021-06-08T06:13:14Z | - |
| dc.date.copyright | 2007-07-19 | |
| dc.date.issued | 2007 | |
| dc.date.submitted | 2007-06-22 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/25433 | - |
| dc.description.abstract | 本研究主要觀察覆晶組裝中，打線金凸塊與鋁墊之界面反應。熱超音波接合為超音波接合與熱壓接合的混合技術，在接合的製程中基板維持在150~250℃，此接合溫度會影接合界面的介金屬化合物成長，特別是直接在12吋矽晶圓上植球。另外在一片環保的聲浪中，無鉛製程大受歡迎，不過此製程需要較高的製程溫度，也提高了介金屬造成失效的可能。在本實驗中我們將金凸塊覆晶接合的過程分成兩個部分研究，第一部份為單純的Au/Au接合；第二部份為Au/Al接合。
研究結果顯示在不同溫度時效時，金金覆晶接點皆破斷在金球內部，強度不隨時效時間而有重大的改變。金鋁覆晶接點則有不同的破斷模式，如Cratering、破斷在金球內部或斷裂在介金屬中，皆為影響強度的重要因素。低溫時效的破斷主要是因Cratering現象所致，高溫失效則因伴隨介金屬成長而出現的Kirkendall voids所造成。本實驗利用穿透式電子顯微鏡、掃描式電子顯微鏡、光學顯微鏡和歐傑電子能譜儀，探討金鋁介金屬成長的機制、成分及對接點強度的影響。 | zh_TW |
| dc.description.abstract | The effort of this study is to comprehend the interfacial reaction of gold bump and aluminum pad. Thermosonic bonding combines the ultrasonic bonding and thermo-compression bonding. In the process of bonding, substrates maintain 150~250℃. This bonding temperature affects the growth of IMC, especially when the bonding lasts longer. Furthermore, Pb-free technology needs higher process temperatures which may cause joints failure. In this study, we will investigate Au/Au joints and Au/Al joints.
According to this study, Au/Au joints all break in the gold solder and their strength doesn’t change with time. However, there are different sorts of failure modes in Au/Al joints. These failure modes affect the ball shear strength. Au/Al joints break in the lower temperature due to the cratering effect and break in the higher temperature due to the Kirkendall voids. In this research, we use TEM , SEM , OM and AES to investigate intermetallic compound . | en |
| dc.description.provenance | Made available in DSpace on 2021-06-08T06:13:14Z (GMT). No. of bitstreams: 1 ntu-96-R94527025-1.pdf: 6345061 bytes, checksum: 59ea233212f8d4091044092968b10474 (MD5) Previous issue date: 2007 | en |
| dc.description.tableofcontents | 第1章 前言 1
1.1 半導體製程簡介 1 1.2 研究動機 5 第2章 理論與文獻回顧 8 2.1 電子構裝技術 8 2.1.1 電子構裝目的 8 2.1.2 電子構裝之技術層次與分類 11 2.1.3 電子構裝技術發展趨勢 17 2.2 覆晶技術 20 2.3 金球與鋁墊之接合 27 2.3.1 介金屬成長動力學 27 2.3.2 金鋁介金屬化合物 28 2.3.3 金鋁接點破壞機制 35 2.3.4 其他相關文獻 39 第3章 實驗方法 46 3.1 實驗材料與設備: 46 3.2 實驗步驟 47 3.2.1 試片的準備: 47 3.2.2 推球試驗 47 3.2.3 穿透式電子顯微鏡(TEM)觀察 48 3.2.4 光學顯微鏡觀察 49 3.2.5 掃描式電子顯微鏡觀察 49 3.2.6 歐傑能譜儀分析 49 第4章 實驗結果與討論 59 4.1 接點強度研究 60 4.1.1 Gold bump/gold pad 接點強度 60 4.1.2 Gold bump/aluminum pad 接點強度 63 4.2 金鋁界面介金屬觀察 75 4.2.1 金鋁界面 OM及 SEM觀察 75 4.2.2 金鋁界面 TEM觀察 84 4.2.3 金鋁界面 AES分析 88 4.2.4 金鋁界面長時間時效觀察 90 第5章 結論 94 第6章 參考文獻 95 | |
| dc.language.iso | zh-TW | |
| dc.title | 覆晶組裝打線金凸塊與鋁墊之界面介金屬反應研究 | zh_TW |
| dc.title | Interfacial Reactions of Wire-bonded Gold Bumps with Aluminu Pads in Flip Chip Assembly | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 95-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 林招松,黃振東,吳春森,林文強 | |
| dc.subject.keyword | 覆晶組裝,打線接合,界面反應, | zh_TW |
| dc.subject.keyword | Flip Chip,Wire Bond,Interfacial reaction, | en |
| dc.relation.page | 101 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2007-06-25 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
| 顯示於系所單位： | 材料科學與工程學系 | |
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